納米光柵的位相掩膜相干光光刻方法與工藝研究
發(fā)布時間：2018-11-01 14:36
【摘要】：微電子、微加工技術(shù)從上個世紀(jì)60年代就取得了飛速發(fā)展,光刻工藝是它們的一種核心技術(shù),是半導(dǎo)體表面加工技術(shù)中最精密的一種方法。本文主要介紹用位相掩膜相干光光刻方法制備納米級光柵的工藝,包括以下幾個部分：第一部分是緒論部分,簡單介紹了光刻工藝的發(fā)展背景和意義,以及納米壓印的原理及工藝流程。第二部分是理論介紹部分,簡單介紹了位相掩膜相干光光刻方法的理論基礎(chǔ),分析指出要成功制備出周期較掩膜板減小一半的光柵圖形必須保證有且僅有±1級衍射光進行干涉,由于±2級等以上級次的衍射光成為了表面消逝波,因此比較關(guān)鍵的是對0級衍射光的抑制。這一部分還介紹了使用兩種方法對光柵圖形的占空比進行調(diào)節(jié),分別為曝光顯影法和遮蔽沉積法。第三部分是實驗部分。通過位相掩膜相干光光刻方法制備出了周期較掩膜板減小一半的納米周期性光柵圖形。在這部分中,我們重點分析了不能制得大面積周期性光柵的原因,主要是由于掩膜板與襯底在納米級別的完美貼合比較困難以及通過人工放置掩膜板與樣品的固定位置使入射光垂直從掩膜板背面入射比較困難所造成的。第四部分是模擬部分。我們利用comsol軟件對掩膜板后的場強進行了模擬。我們首先固定掩膜板的周期,調(diào)節(jié)它的刻蝕深度來尋找周期固定時它的最佳刻蝕深度。接著我們模擬了掩膜板的周期在λ(?)2λ((?)為掩膜板周期,λ為入射光波長)這個范圍內(nèi)變化時,它不同周期時的最佳刻蝕深度。最后我們固定掩膜板的刻蝕深度,模擬了掩膜板周期分別在(?)λ、(?)~λ和λ(?)2λ這三個不同區(qū)域時掩膜板后的場強分布。我們發(fā)現(xiàn)當(dāng)掩膜板的周期在接近1.5λ時,在最佳刻蝕深度所得到的場強是最好的,掩膜板的周期越接近于λ或者2λ時,所得到的場強越差,甚至得不到周期較掩膜板減小一般的場強。這可能是由于當(dāng)掩膜板周期接近1.5λ時,±1級衍射光比較強,此時的0級及2級等以上級次的衍射光相對比較弱的緣故。當(dāng)掩膜板的周期接近λ時,其后的光場周期與掩膜板的相同,且層與層之間有場強相互交叉的現(xiàn)象,這可能是由于當(dāng)掩膜板的周期接近于λ時,0級衍射光在所有衍射光中所占的比重有所提高,它與±1級衍射光產(chǎn)生的干涉現(xiàn)象,而當(dāng)掩膜板的周期接近2λ時,其后的光場比較亂,這可能是由于此時±2級衍射光也參與了干涉。第五部分是對本文所做的工作的總結(jié)及展望。
[Abstract]:The technology of microelectronics and micromachining has been developing rapidly since the 1960s. Lithography is one of their core technologies and the most precise method in semiconductor surface processing. In this paper, the fabrication process of nanocrystalline grating by phase-mask coherent photolithography is introduced, including the following parts: the first part is the introduction part, the development background and significance of lithography technology are briefly introduced. And the principle and process of nano-imprint. The second part is the theoretical introduction, which briefly introduces the theoretical basis of phase mask coherent photolithography. It is pointed out that in order to successfully fabricate the grating pattern with half less period than the mask plate, only 鹵1 order diffraction light interference must be guaranteed. Because the diffraction light of 鹵2 order becomes the surface evanescent wave, it is more important to suppress the 0-order diffraction light. In this part, we also introduce two methods to adjust the duty cycle of grating pattern, namely, exposure development method and shaded deposition method. The third part is the experimental part. The phase mask coherent photolithography was used to fabricate the nanocrystalline periodic gratings with half less period than the mask plate. In this part, we focus on the analysis of the reasons why large area periodic gratings cannot be produced. It is mainly due to the difficulty of perfectly sticking the mask to the substrate at the nanometer level and the difficulty of incident light incident vertically from the back of the mask by fixing the position between the mask and the sample by manual placement. The fourth part is the simulation part. We use comsol software to simulate the field strength behind the mask. First, we fix the period of the mask plate and adjust its etching depth to find the best etching depth when the period is fixed. Then we simulate the period of the mask at 位 (?) 2 位 (?) For the period of mask plate, 位 is the wavelength of incident light, and the optimum etching depth is obtained when the period of the mask plate varies in the range of the wavelength of incident light. Finally, the etching depth of the mask is fixed, and the field intensity distribution behind the mask is simulated when the period of the mask is in three different regions: (?) 位, (?) ~ 位 and 位 (?) _ 2 位, respectively. We find that when the period of the mask plate is close to 1.5 位, the field strength obtained at the optimum etching depth is the best. The closer the period of the mask plate is to 位 or 2 位, the worse the field intensity is. Even the period can not reduce the general field strength compared with the mask plate. This may be due to the fact that when the period of the mask plate is close to 1.5 位, the diffraction light of 鹵1 order is relatively strong, and the diffraction light of order 0 and above order 2 is relatively weak. When the period of mask plate is close to 位, the period of light field is the same as that of mask plate, and there is a phenomenon that the field intensity intersects between layers. This may be due to the fact that when the period of mask plate is close to 位, the light field period of the mask plate is similar to that of the mask plate. The proportion of 0-order diffraction light in all diffractive light is increased, and it interacts with 鹵1-order diffraction light, but when the period of mask plate is close to 2 位, the light field is chaotic. This may be because the 鹵2 order diffraction is also involved in the interference. The fifth part is the summary and prospect of the work done in this paper.
【學(xué)位授予單位】：南京大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN305.7
[Abstract]:The technology of microelectronics and micromachining has been developing rapidly since the 1960s. Lithography is one of their core technologies and the most precise method in semiconductor surface processing. In this paper, the fabrication process of nanocrystalline grating by phase-mask coherent photolithography is introduced, including the following parts: the first part is the introduction part, the development background and significance of lithography technology are briefly introduced. And the principle and process of nano-imprint. The second part is the theoretical introduction, which briefly introduces the theoretical basis of phase mask coherent photolithography. It is pointed out that in order to successfully fabricate the grating pattern with half less period than the mask plate, only 鹵1 order diffraction light interference must be guaranteed. Because the diffraction light of 鹵2 order becomes the surface evanescent wave, it is more important to suppress the 0-order diffraction light. In this part, we also introduce two methods to adjust the duty cycle of grating pattern, namely, exposure development method and shaded deposition method. The third part is the experimental part. The phase mask coherent photolithography was used to fabricate the nanocrystalline periodic gratings with half less period than the mask plate. In this part, we focus on the analysis of the reasons why large area periodic gratings cannot be produced. It is mainly due to the difficulty of perfectly sticking the mask to the substrate at the nanometer level and the difficulty of incident light incident vertically from the back of the mask by fixing the position between the mask and the sample by manual placement. The fourth part is the simulation part. We use comsol software to simulate the field strength behind the mask. First, we fix the period of the mask plate and adjust its etching depth to find the best etching depth when the period is fixed. Then we simulate the period of the mask at 位 (?) 2 位 (?) For the period of mask plate, 位 is the wavelength of incident light, and the optimum etching depth is obtained when the period of the mask plate varies in the range of the wavelength of incident light. Finally, the etching depth of the mask is fixed, and the field intensity distribution behind the mask is simulated when the period of the mask is in three different regions: (?) 位, (?) ~ 位 and 位 (?) _ 2 位, respectively. We find that when the period of the mask plate is close to 1.5 位, the field strength obtained at the optimum etching depth is the best. The closer the period of the mask plate is to 位 or 2 位, the worse the field intensity is. Even the period can not reduce the general field strength compared with the mask plate. This may be due to the fact that when the period of the mask plate is close to 1.5 位, the diffraction light of 鹵1 order is relatively strong, and the diffraction light of order 0 and above order 2 is relatively weak. When the period of mask plate is close to 位, the period of light field is the same as that of mask plate, and there is a phenomenon that the field intensity intersects between layers. This may be due to the fact that when the period of mask plate is close to 位, the light field period of the mask plate is similar to that of the mask plate. The proportion of 0-order diffraction light in all diffractive light is increased, and it interacts with 鹵1-order diffraction light, but when the period of mask plate is close to 2 位, the light field is chaotic. This may be because the 鹵2 order diffraction is also involved in the interference. The fifth part is the summary and prospect of the work done in this paper.
【學(xué)位授予單位】：南京大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN305.7
【共引文獻】
相關(guān)期刊論文 前5條
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2 孟嶺超;曾永彬;曲寧松;朱荻;;碳納米管工具電極的導(dǎo)電性能[J];光學(xué)精密工程;2014年03期
3 陳帥;邱穎霞;魏曉e，
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