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堿性拋光液速率穩(wěn)定性的研究

發(fā)布時間:2018-10-30 14:51
【摘要】:隨著極大規(guī)模集成電路的大規(guī)模產(chǎn)業(yè)化,對于平坦化技術(shù)的要求也越來越高。目前,普遍應(yīng)用的平坦化工藝為化學(xué)機械平坦化(CMP),在化學(xué)機械平坦化中,拋光機,拋光工藝和使用的拋光材料即拋光液的質(zhì)量直接決定著化學(xué)機械平坦化的效果,拋光液在其中又起到關(guān)鍵作用,拋光液的好壞直接決定著CMP的效果。目前產(chǎn)業(yè)化中使用的拋光液多為酸性拋光液,但隨著極大規(guī)模集成電路發(fā)展至22nm節(jié)點以下,只有堿性拋光液才能達到平坦化的需求。由于堿性拋光液使用雙氧水(H2O2)作為氧化劑,雙氧水本身即存在不穩(wěn)定性,在酸性環(huán)境中相對穩(wěn)定,在堿性環(huán)境中易分解產(chǎn)生水和氧氣,因此導(dǎo)致堿性拋光液存在不穩(wěn)定,配置完成后,短時間內(nèi)發(fā)生不穩(wěn)定現(xiàn)象。堿性拋光液速率穩(wěn)定性在世界上是個難題,通過實驗大幅提高堿性拋光液速率的穩(wěn)定性。因此研究堿性拋光液的穩(wěn)定性具有十分重要的意義。本文通過以下方法研究堿性拋光液中各組分對于堿性拋光液穩(wěn)定性的影響和如何延長堿性拋光液的方法:堿性拋光液選用河北工業(yè)大學(xué)微電子所研制的堿性銅CMP拋光液,使用稱重法測量拋光速率。通過改變堿性拋光液中各組分,即螯合劑、活性劑、磨料、氧化劑和去離子水的含量和配比,了解各組分對于拋光液速率穩(wěn)定性的影響;另外通過改變拋光液配置方法,加入穩(wěn)定劑,調(diào)整拋光液pH值等方法研究其他因素對于堿性拋光液速率穩(wěn)定性的影響。通過對于各種因素對堿性拋光液速率穩(wěn)定性的影響選擇一種或多種可延長堿性拋光液速率穩(wěn)定性的方法。通過各種實驗表明了各種成分對于堿性拋光液速率穩(wěn)定性的影響,在堿性拋光液的個組成成分中,螯合劑、磨料和氧化劑對于的拋光液速率穩(wěn)定性的影響較大,起主要因素;活性劑和去離子對于拋光液速率穩(wěn)定性的影響不大。通過各種因素的調(diào)整,得到一種速率可穩(wěn)定達5天的堿性拋光液,在速率為5000?/min的拋光液可穩(wěn)定8小時。
[Abstract]:With the large-scale industrialization of large scale integrated circuits, the requirement of flatting technology is higher and higher. At present, the widely used flattening process is chemical mechanical flattening (CMP),). The quality of polishing machine, polishing process and polishing material, that is, polishing liquid, directly determines the effect of chemical mechanical flattening. Polishing liquid plays a key role in it, and the quality of polishing liquid directly determines the effect of CMP. At present, most of the polishing liquid used in industrialization is acidic polishing liquid, but with the development of the maximum scale integrated circuit below the 22nm node, only the alkaline polishing liquid can achieve the demand of flatness. Because hydrogen peroxide (H2O2) is used as oxidant in alkaline polishing liquid, hydrogen peroxide itself is unstable, relatively stable in acidic environment, and easy to decompose to produce water and oxygen in alkaline environment, which leads to instability of alkaline polishing liquid. After the configuration is completed, instability occurs in a short period of time. The rate stability of alkaline polishing liquid is a difficult problem in the world. Therefore, it is of great significance to study the stability of alkaline polishing liquid. In this paper, the effect of various components in alkaline polishing solution on the stability of alkaline polishing liquid and how to prolong the alkaline polishing liquid are studied. The alkaline polishing liquid is made of alkaline copper CMP, which is developed by microelectronics of Hebei University of Technology. Use weighing method to measure polishing rate. By changing the content and ratio of chelating agent, active agent, abrasive, oxidant and deionized water in alkaline polishing liquid, the effect of each component on the rate stability of polishing solution was studied. In addition, the effect of other factors on the rate stability of alkaline polishing liquid was studied by changing the method of polishing liquid configuration, adding stabilizer and adjusting the pH value of polishing liquid. According to the influence of various factors on the rate stability of alkaline polishing liquid, one or more methods can be used to prolong the rate stability of alkaline polishing liquid. The effect of various components on the stability of the rate of alkaline polishing liquid is shown by various experiments. Among the components of the basic polishing liquid, the chelating agent, abrasive and oxidant have a great influence on the stability of the rate of the polishing liquid, which is the main factor. The effect of active agent and deionization on the rate stability of polishing liquid is not significant. Through the adjustment of various factors, an alkaline polishing solution with a stable rate of 5 days was obtained, which can be stabilized for 8 hours at the rate of 5000?/min.
【學(xué)位授予單位】:河北工業(yè)大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN305.2

【參考文獻】

相關(guān)期刊論文 前1條

1 胡軼;劉玉嶺;劉效巖;何彥剛;王立冉;張保國;;Effect of alkaline slurry on the electric character of the pattern Cu wafer[J];半導(dǎo)體學(xué)報;2011年07期

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本文編號:2300306

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