4H-SiC歐姆接觸研究及其應用
發(fā)布時間：2018-10-30 08:14
【摘要】：4H-SiC是性能優(yōu)異的寬禁帶半導體材料之一,其在高溫、高頻、高功率和抗輻射器件等方面具有巨大的應用潛力。但是在器件制備過程中,仍存在若干工藝難點,其中關(guān)鍵工藝技術(shù)之一是獲得良好的歐姆接觸。本文針對4H-SiC歐姆接觸工藝以及相關(guān)器件制備做了如下工作：基于國內(nèi)外SiC歐姆接觸的調(diào)研,研究了p型和n型歐姆接觸的常用金屬體系和形成機理,確定了同時形成p型和n型歐姆接觸的金屬化方案Ni/Ti/Al,改變Ni的厚度,通過大量系統(tǒng)性實驗研究了不同的合金退火溫度和退火時間下,不同的Ni厚度對p型和n型4H-SiC歐姆接觸的影響,得到同時形成p型和n型歐姆接觸比接觸電阻分別為4.2×10-5和7.8×10-5Ω·cm2,并采用XRD,AES和AFM等測試手段對該金屬體系和4H-SiC接觸表面及界面進行分析表征,探究歐姆接觸形成機理。并將優(yōu)化的p型歐姆接觸條件應用于3300V4H-SiCPiN金屬電極制備過程當中,詳述了3300V4H-SiC PiN的工藝流程,并采用研究室化合物半導體工藝線進行流片并測試,器件正向特性良好�；�4H-SiC MOSFET器件的關(guān)鍵工藝,主要介紹了離子注入和激活退火工藝,利用TRIM軟件進行離子注入仿真,得到MOSFET器件p+、p well, n+區(qū)域的注入條件,并通過SIMS驗證得到仿真與實際注入分布一致的結(jié)果；基于離子注入和激活退火工藝的開發(fā),并結(jié)合同時形成p型和n型歐姆接觸的優(yōu)化條件,確定了適用于4H-SiC MOSFET器件的p型和n型離子注入、激活退火和歐姆接觸的工藝條件,并介紹了4H-SiC MOSFET的主要工藝步驟,用于后期器件流片。
[Abstract]:4H-SiC is one of the excellent wide band gap semiconductor materials. It has great application potential in high temperature, high frequency, high power and radiation resistant devices. However, there are still some difficulties in the fabrication of the device, one of the key technologies is to obtain good ohmic contact. Based on the investigation of SiC ohmic contact at home and abroad, the metal systems and formation mechanism of p-type and n-type ohmic contact are studied. The metallization scheme of forming p-type and n-type ohmic contact at the same time was determined. The thickness of Ni was changed by Ni/Ti/Al,. The annealing temperature and annealing time of different alloys were studied by a large number of systematic experiments. The effects of different Ni thickness on the ohmic contact of p-type and n-type 4H-SiC are obtained. The specific contact resistance of p-type and n-type 4H-SiC is 4.2 脳 10-5 and 7.8 脳 10-5 惟 cm2, respectively, and XRD, is used. The contact surface and interface of the metal system and 4H-SiC were characterized by AES and AFM, and the formation mechanism of ohmic contact was investigated. The optimized p-type ohmic contact conditions were applied to the preparation of 3300V4H-SiCPiN metal electrode. The process of 3300V4H-SiC PiN was described in detail. The flow sheet was tested by using the compound semiconductor process line in laboratory. The positive characteristics of the device were good. Based on the key technology of 4H-SiC MOSFET device, this paper mainly introduces the ion implantation and activation annealing process. The implantation conditions of p, p well, n region of MOSFET device are obtained by using TRIM software to simulate the ion implantation. The simulation results are consistent with the actual injection distribution by SIMS verification. Based on the development of ion implantation and activation annealing process and the optimal conditions for forming p-type and n-type ohmic contact at the same time, the process conditions for p-type and n-type ion implantation, activation annealing and ohmic contact for 4H-SiC MOSFET devices are determined. The main process steps of 4H-SiC MOSFET are introduced.
【學位授予單位】：蘭州大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304.2
本文編號：2299449
[Abstract]:4H-SiC is one of the excellent wide band gap semiconductor materials. It has great application potential in high temperature, high frequency, high power and radiation resistant devices. However, there are still some difficulties in the fabrication of the device, one of the key technologies is to obtain good ohmic contact. Based on the investigation of SiC ohmic contact at home and abroad, the metal systems and formation mechanism of p-type and n-type ohmic contact are studied. The metallization scheme of forming p-type and n-type ohmic contact at the same time was determined. The thickness of Ni was changed by Ni/Ti/Al,. The annealing temperature and annealing time of different alloys were studied by a large number of systematic experiments. The effects of different Ni thickness on the ohmic contact of p-type and n-type 4H-SiC are obtained. The specific contact resistance of p-type and n-type 4H-SiC is 4.2 脳 10-5 and 7.8 脳 10-5 惟 cm2, respectively, and XRD, is used. The contact surface and interface of the metal system and 4H-SiC were characterized by AES and AFM, and the formation mechanism of ohmic contact was investigated. The optimized p-type ohmic contact conditions were applied to the preparation of 3300V4H-SiCPiN metal electrode. The process of 3300V4H-SiC PiN was described in detail. The flow sheet was tested by using the compound semiconductor process line in laboratory. The positive characteristics of the device were good. Based on the key technology of 4H-SiC MOSFET device, this paper mainly introduces the ion implantation and activation annealing process. The implantation conditions of p, p well, n region of MOSFET device are obtained by using TRIM software to simulate the ion implantation. The simulation results are consistent with the actual injection distribution by SIMS verification. Based on the development of ion implantation and activation annealing process and the optimal conditions for forming p-type and n-type ohmic contact at the same time, the process conditions for p-type and n-type ion implantation, activation annealing and ohmic contact for 4H-SiC MOSFET devices are determined. The main process steps of 4H-SiC MOSFET are introduced.
【學位授予單位】：蘭州大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304.2
【參考文獻】
相關(guān)博士學位論文 前1條
1 陳豐平;4H-SiC功率肖特基勢壘二極管（SBD）和結(jié)型勢壘肖特基（JBS）二極管的研究[D];西安電子科技大學;2012年
，本文編號：2299449
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