【摘要】：作為窄禁帶半導(dǎo)體的GaAsSb,是一種性能優(yōu)良的紅外光電材料。在合金生長過程中,由于Sb的引入,造成合金內(nèi)組分不均勻現(xiàn)象,形成局域態(tài),并且對(duì)載流子產(chǎn)生束縛,引起局域態(tài)發(fā)光現(xiàn)象。而熱退火工藝可以對(duì)合金中組分不均勻現(xiàn)象進(jìn)行改善,可以有效的調(diào)節(jié)局域態(tài)發(fā)光。因此開展熱退火工藝對(duì)銻化物合金質(zhì)量及發(fā)光特性研究工作是有重要意義的。利用分子束外延(MBE)技術(shù)在GaAs襯底上生長了Sb組分為9%的GaAsSb合金,并在合金中觀察到局域態(tài)發(fā)光的現(xiàn)象。對(duì)GaAs_(0.91)Sb_(0.09)合金進(jìn)行慢速退火處理,研究發(fā)現(xiàn)這種退火處理引起了局域態(tài)的加重,造成的原因可能是退火所引起的砷和銻組分?jǐn)U散。雖然慢速退火處理后合金帶邊發(fā)光比例增加,這對(duì)于提高帶邊發(fā)光是有利的,但是并沒有消除局域態(tài)的發(fā)光。采用快速熱退火在不同的時(shí)間下對(duì)合金進(jìn)行處理。其中退火為10s的處理?xiàng)l件下,局域態(tài)得到了較好的抑制。但是,隨著退火時(shí)間的增加,合金中的局域態(tài)現(xiàn)象又加重了。通過XRD測(cè)試表明,GaAs_(0.91)Sb_(0.09)合金質(zhì)量在10s退火處理下是最優(yōu)化的。通過慢速退火和快速熱退火處理后對(duì)比,分析合金的XRD和PL光譜,可知,慢速退火會(huì)使合金中的局域態(tài)現(xiàn)象更加嚴(yán)重。而通過快速熱退火可以減少GaAs_(0.91)Sb_(0.09)合金中的局域態(tài)現(xiàn)象,是調(diào)控局域態(tài)的良好手段。本文通過快速熱退火對(duì)GaAsSb合金的處理方法,達(dá)到良好的抑制局域態(tài)效果,并且提高合金質(zhì)量。因此抑制局域態(tài)發(fā)光以及改善局域態(tài)發(fā)光方面,快速熱退火處理技術(shù)優(yōu)于慢速退火。
[Abstract]:As a narrow band gap semiconductor, GaAsSb, is a kind of infrared optoelectronic material with excellent performance. During the growth of the alloy, the introduction of Sb leads to the inhomogeneity of the composition in the alloy, the formation of the local state, and the binding of the carriers, which results in the local luminescence. The thermal annealing process can improve the inhomogeneity of the alloy and adjust the local luminescence effectively. Therefore, it is of great significance to study the quality and luminescence characteristics of antimonide alloy by thermal annealing. A 9% Sb alloy was grown on GaAs substrate by molecular beam epitaxy (MBE) (MBE) technique, and the localized luminescence was observed in the alloy. GaAs_ _ (0.91) Sb_ _ (0.09) alloy was annealed at a slow rate. It was found that the local state was aggravated by this annealing treatment, which may be due to the diffusion of arsenic and antimony components caused by annealing. Although the ratio of band-edge luminescence increases after slow annealing, it is beneficial to increase the band-edge luminescence, but it does not eliminate the localized luminescence. The alloy was treated by rapid thermal annealing at different time. The local states were well suppressed under the annealing condition of 10 s. However, with the increase of annealing time, the local state phenomenon in the alloy is aggravated. XRD results show that the quality of GaAs_ (0.91) Sb_ (0.09) alloy is optimized under 10 s annealing. The XRD and PL spectra of the alloy are analyzed by comparing the slow annealing and the rapid thermal annealing. It is shown that the local state phenomenon in the alloy will be more serious after slow annealing. The local state in GaAs_ (0. 91) Sb_ (0. 09) alloy can be reduced by rapid thermal annealing, which is a good means to regulate the local state. In this paper, the treatment of GaAsSb alloy by rapid thermal annealing has achieved a good effect of restraining the local state and improving the quality of the alloy. Therefore, fast thermal annealing is superior to slow annealing in suppressing local state luminescence and improving local state luminescence.
【學(xué)位授予單位】：長春理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304

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