高電源抑制比帶隙基準電壓源設(shè)計
[Abstract]:When the temperature or the supply voltage VDD changes, the output voltage of the bandgap voltage reference source is almost unchanged. This excellent performance makes bandgap reference play an important role in many circuit modules. With the development of analog integrated circuits, more and more analog engineers and scholars favor how to design high performance bandgap reference. Under this background, the high power rejection ratio bandgap voltage reference is studied in this paper. In this paper, the significance of bandgap reference research and the research focus at home and abroad are investigated. Then, the principle of positive and negative temperature coefficient is analyzed, the loop gain of bandgap reference and the condition of ensuring loop stability are deduced, and the influence of amplifier offset voltage on the output voltage precision of bandgap reference is discussed. The bandgap reference designed in this paper has three characteristics: low output voltage, high power supply rejection ratio and low temperature drift coefficient. The bandgap reference consists of four different parts, which are the core circuit of bandgap reference, amplifier, preregulation circuit and startup circuit. In this paper, the working principle of each part of the circuit is analyzed and the mathematical derivation is carried out, and the results of software simulation are compared with the requirements. The difficulty of circuit design lies in the design of preregulation circuit and how to ensure that the circuit still meets the requirements of each process angle. In this paper, the current summation mode is adopted to achieve the purpose of low voltage output. The voltage pre-regulation method improves the power supply rejection ratio and carries out certain temperature compensation. Through the simulation of the circuit, it is found that when the VDD=3.3V, process angle is also different, the simulation results meet the design requirements. Take the tt process angle as an example, the output is 0.8V, the power suppression ratio is 108.36d B@ 100HzN, the temperature drift coefficient of 10k Hz; is 2.65ppm/ 擄C, and the response time is 5.9 渭 s. The simulation results meet the design requirements.
【學(xué)位授予單位】:哈爾濱理工大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TN432
【相似文獻】
相關(guān)期刊論文 前10條
1 張嘯誠;邢建力;;一種高電源抑制比和高精度帶隙電壓源設(shè)計[J];信息與電子工程;2012年03期
2 袁曉波;徐東明;謝慶勝;;一種高電源抑制比的LDO電路的設(shè)計[J];中國集成電路;2010年01期
3 付秀蘭;黃英;向蓓;湯志強;;一種高電源抑制比的基準電壓源設(shè)計[J];合肥工業(yè)大學(xué)學(xué)報(自然科學(xué)版);2009年04期
4 王磊;王剛;許博謙;;一種高電源抑制比的LDO電路設(shè)計[J];長春理工大學(xué)學(xué)報(自然科學(xué)版);2012年02期
5 李泳佳;夏曉娟;;高電源抑制比的CMOS亞閾值多輸出電壓基準[J];電子設(shè)計工程;2009年12期
6 方圓;周鳳星;張濤;張迪;;一種高電源抑制比全工藝角低溫漂CMOS基準電壓源[J];電子設(shè)計工程;2012年24期
7 程剛;白忠臣;王超;秦水介;;一種高電源抑制比的CMOS帶隙基準電壓源設(shè)計[J];電子設(shè)計工程;2013年08期
8 劉中偉;夏素靜;周偉;;一種寬輸入范圍高電源抑制比的帶隙基準電路[J];科協(xié)論壇(下半月);2011年05期
9 蔣浩;汪東旭;趙新江;;一種高電源抑制比的帶隙基準電路[J];微計算機信息;2006年14期
10 吳謹;常昌遠;石超;;一種高電源抑制比曲率補償帶隙基準電壓源[J];電子與封裝;2008年06期
相關(guān)碩士學(xué)位論文 前6條
1 杜皎;一款高電源抑制比低壓差線性穩(wěn)壓器設(shè)計[D];復(fù)旦大學(xué);2012年
2 肖正;高瞬態(tài)響應(yīng)高電源抑制比LDO[D];長沙理工大學(xué);2015年
3 曹應(yīng)偉;高電源抑制比帶隙基準電壓源設(shè)計[D];哈爾濱理工大學(xué);2017年
4 黃圣專;高電源抑制比低壓差線性穩(wěn)壓器(LDO)設(shè)計[D];復(fù)旦大學(xué);2011年
5 張娜娜;高電源抑制比低壓差線性穩(wěn)壓器的設(shè)計與研究[D];合肥工業(yè)大學(xué);2007年
6 邵亞利;大電流高電源抑制比的低壓差線性穩(wěn)壓器[D];浙江大學(xué);2011年
,本文編號:2286025
本文鏈接:http://sikaile.net/kejilunwen/dianzigongchenglunwen/2286025.html