超寬帶微波固態(tài)功率放大器研究
發(fā)布時(shí)間：2018-10-16 14:17
【摘要】：本文基于GaN HEMT設(shè)計(jì)了S-C波段的超寬帶功率放大器。介紹了最近幾年的寬帶功率放大器的研究狀況以及功率放大器設(shè)計(jì)的種類指標(biāo)參數(shù)的定義,介紹了目前寬帶功率放大器實(shí)現(xiàn)的方法,并設(shè)計(jì)制作了加電時(shí)序電路。共設(shè)計(jì)制作了三款寬帶功率放大器模塊,其中兩個(gè)3-8GHz中功率的寬帶功率放大器模塊(中級(jí))和一個(gè)大功率(末級(jí))的寬帶功率放大器模塊。前者最大輸出功率為38.5dBm,后者輸出功率為45dBm。首先本文查閱了九十年代以來國內(nèi)外對超寬帶射頻功率放大器研究的成果和進(jìn)展?fàn)顩r。意識(shí)到了實(shí)現(xiàn)寬帶大功率放大器的緊迫性。通過對當(dāng)前國內(nèi)外成果的調(diào)查,分析出了國內(nèi)外對寬帶功率放大器已經(jīng)研究的內(nèi)容和未來發(fā)展的方向。然后簡單的討論和分析了射頻功率放大器的分類以及各自應(yīng)用的特點(diǎn)。介紹了功率放大器中基本的設(shè)計(jì)指標(biāo)和參數(shù),說明了在設(shè)計(jì)過程中應(yīng)該注意那些問題。強(qiáng)調(diào)了“零”點(diǎn)電容的作用,介紹了基于GaN的新型負(fù)反饋電路結(jié)構(gòu)以及微帶線理論,分析了微帶線在匹配過程中應(yīng)該注意的問題。介紹了屏蔽腔體設(shè)計(jì)過程注意的事項(xiàng)以及整個(gè)設(shè)計(jì)要具有工程性。強(qiáng)調(diào)了設(shè)計(jì)初始要了解整個(gè)微組裝的流程。最后仿真并制作了三個(gè)不同的3-8GHz的寬帶功率放大器模塊,驅(qū)動(dòng)級(jí)最大輸出功率為38.5dBm,末級(jí)輸出功率為45d Bm。利用ADS分別對放大器的芯片進(jìn)行了建模,并且對金絲鍵合線在HFSS中和ADS中的仿真模型進(jìn)行了對比。本文對設(shè)計(jì)的功率放大器進(jìn)行了加工制作和測試并對仿真結(jié)果和測試結(jié)果進(jìn)行對比與分析。另外還制作了加電時(shí)序電路,并進(jìn)行了測試。本文采用的TriQuint公司的GaN HEMT芯片TGF2023-02和TGF2023-20兩種裸片,分別用于驅(qū)動(dòng)級(jí)和末級(jí)的設(shè)計(jì)。設(shè)計(jì)中采用自己項(xiàng)目組建立的芯片模型,并使用鍵合線進(jìn)行連接微帶線和芯片。設(shè)計(jì)的功率放大器工作在AB類,末級(jí)設(shè)計(jì)的3-8GHz寬帶功率放大器,輸出功率為45dBm。從目前檢索的文獻(xiàn)來看這是在國內(nèi)外非常罕見的。
[Abstract]:In this paper, an S-C band UWB power amplifier is designed based on GaN HEMT. This paper introduces the research status of wideband power amplifier in recent years and the definition of the parameters of power amplifier design. It also introduces the realization method of wideband power amplifier at present, and designs and manufactures the power supply sequential circuit. Three kinds of broadband power amplifier modules are designed and fabricated, including two power broadband power amplifier modules (intermediate) and one high-power (last stage) broadband power amplifier module in 3-8GHz. The maximum output power of the former is 38.5 dBmand the latter is 45dBm. Firstly, this paper reviews the research achievements and progress of UWB RF power amplifier since 1990's. Realize the urgency of realizing broadband high power amplifier. Based on the investigation of domestic and foreign achievements, the contents and future development of broadband power amplifiers are analyzed. Then the classification of RF power amplifier and the characteristics of their applications are discussed and analyzed briefly. This paper introduces the basic design indexes and parameters of power amplifier, and explains the problems that should be paid attention to in the process of design. This paper emphasizes the function of "zero" point capacitance, introduces the new negative feedback circuit structure based on GaN and the theory of microstrip line, and analyzes the problems that should be paid attention to in the matching process of microstrip line. This paper introduces the matters needing attention in the design process of shielded cavity and the engineering character of the whole design. Emphasis is placed on the initial understanding of the entire microassembly process. Finally, three different 3-8GHz broadband power amplifier modules are simulated and fabricated. The maximum output power of the drive stage is 38.5 dBmand the final output power is 45 d Bm.. The chip of amplifier is modeled by ADS, and the simulation model of gold wire bonding line in HFSS and ADS is compared. In this paper, the power amplifier is fabricated and tested, and the simulation results and test results are compared and analyzed. In addition, the power-up sequential circuit is made and tested. In this paper, TriQuint GaN HEMT chip TGF2023-02 and TGF2023-20 are used for driver stage and final stage design, respectively. In the design, the chip model established by our project group is used, and the bonding line is used to connect the microstrip wire and the chip. The designed power amplifier works in the AB class, the last stage of the 3-8GHz wideband power amplifier, the output power is 45dBmm. This is very rare at home and abroad as far as the literature is concerned.
【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75
本文編號(hào)：2274630
[Abstract]:In this paper, an S-C band UWB power amplifier is designed based on GaN HEMT. This paper introduces the research status of wideband power amplifier in recent years and the definition of the parameters of power amplifier design. It also introduces the realization method of wideband power amplifier at present, and designs and manufactures the power supply sequential circuit. Three kinds of broadband power amplifier modules are designed and fabricated, including two power broadband power amplifier modules (intermediate) and one high-power (last stage) broadband power amplifier module in 3-8GHz. The maximum output power of the former is 38.5 dBmand the latter is 45dBm. Firstly, this paper reviews the research achievements and progress of UWB RF power amplifier since 1990's. Realize the urgency of realizing broadband high power amplifier. Based on the investigation of domestic and foreign achievements, the contents and future development of broadband power amplifiers are analyzed. Then the classification of RF power amplifier and the characteristics of their applications are discussed and analyzed briefly. This paper introduces the basic design indexes and parameters of power amplifier, and explains the problems that should be paid attention to in the process of design. This paper emphasizes the function of "zero" point capacitance, introduces the new negative feedback circuit structure based on GaN and the theory of microstrip line, and analyzes the problems that should be paid attention to in the matching process of microstrip line. This paper introduces the matters needing attention in the design process of shielded cavity and the engineering character of the whole design. Emphasis is placed on the initial understanding of the entire microassembly process. Finally, three different 3-8GHz broadband power amplifier modules are simulated and fabricated. The maximum output power of the drive stage is 38.5 dBmand the final output power is 45 d Bm.. The chip of amplifier is modeled by ADS, and the simulation model of gold wire bonding line in HFSS and ADS is compared. In this paper, the power amplifier is fabricated and tested, and the simulation results and test results are compared and analyzed. In addition, the power-up sequential circuit is made and tested. In this paper, TriQuint GaN HEMT chip TGF2023-02 and TGF2023-20 are used for driver stage and final stage design, respectively. In the design, the chip model established by our project group is used, and the bonding line is used to connect the microstrip wire and the chip. The designed power amplifier works in the AB class, the last stage of the 3-8GHz wideband power amplifier, the output power is 45dBmm. This is very rare at home and abroad as far as the literature is concerned.
【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75
【參考文獻(xiàn)】
相關(guān)期刊論文 前2條
1 董阿麗;李煥英;;GPS接收機(jī)前端低噪聲放大器設(shè)計(jì)[J];電腦知識(shí)與技術(shù);2009年16期
2 陳雪軍,高建峰,陳效建,林金庭;2～26GHzGaAs單片功率放大器[J];電子學(xué)報(bào);2000年11期
，本文編號(hào)：2274630
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