【摘要】：與傳統(tǒng)的智能功率模塊相比,智能功率芯片具有體積小、功耗低等優(yōu)點(diǎn),隨著電機(jī)緊湊型和可靠性要求的日益提高以及國(guó)家節(jié)能環(huán)保政策的實(shí)施,智能功率芯片的需求量正快速增長(zhǎng)。然而,嚴(yán)苛的系統(tǒng)應(yīng)用環(huán)境和獨(dú)特的內(nèi)部構(gòu)造易使智能功率芯片溫度升高,造成可靠性問題,因此一個(gè)高精度、穩(wěn)定性良好的內(nèi)置過溫保護(hù)電路對(duì)智能功率芯片及其應(yīng)用系統(tǒng)的可靠性極為重要。本文首先介紹了過溫保護(hù)電路的工作原理和基本結(jié)構(gòu),并分析了片上溫度檢測(cè)技術(shù)及其性能和傳統(tǒng)的智能功率芯片中過溫保護(hù)電路存在的問題；其次,結(jié)合智能功率芯片的實(shí)際應(yīng)用情況和特點(diǎn)對(duì)其過溫保護(hù)進(jìn)行了深入分析并設(shè)計(jì)了高可靠性的過溫保護(hù)策略；最后,著重研究了三極管溫度檢測(cè)電路的線性度、靈敏度及電源電壓三個(gè)參數(shù),針對(duì)過溫保護(hù)電路提出了一種優(yōu)化的溫度檢測(cè)方法,設(shè)計(jì)了一款應(yīng)用于智能功率芯片的高精度、低功耗過溫保護(hù)電路并采用Cadence Spectre軟件仿真驗(yàn)證。本文設(shè)計(jì)的過溫保護(hù)電路,采用三極管的基極-發(fā)射極電壓差△VBE進(jìn)行溫度檢測(cè),顯著提高了線性度,減小電源電壓變化和工藝偏差對(duì)過溫保護(hù)開啟溫度點(diǎn)和關(guān)斷溫度點(diǎn)的影響：采用本文提出的溫度檢測(cè)方法,在低溫區(qū)溫度檢測(cè)靈敏度較低,而在高溫區(qū)靈敏度較高,從而減小基于△VBE的溫度檢測(cè)輸出電壓值,使得電路能夠工作于低電源電壓下,降低電路功耗；采用可再生比較器,利用其內(nèi)部正反饋,提高電路的轉(zhuǎn)換速率,從而提高過溫保護(hù)電路的精度。本設(shè)計(jì)基于華潤(rùn)上華的0.5μm 600V SOI BCD工藝進(jìn)行流片,測(cè)試結(jié)果顯示,本文設(shè)計(jì)的過溫保護(hù)電路,在50℃至150℃溫度范圍內(nèi),平均溫度檢測(cè)靈敏度大于11mV/℃,非線性誤差小于5%：在電源電壓從3V變化至6V時(shí),過溫保護(hù)關(guān)斷溫度和開啟溫度的偏差均小于2%：在電源電壓為5V時(shí)電路整體功耗為0.65mW,測(cè)試結(jié)果滿足設(shè)計(jì)要求。
[Abstract]:Compared with the traditional intelligent power module, the smart power chip has the advantages of small size, low power consumption and so on. With the increasing demand of compact motor and reliability and the implementation of national energy saving and environmental protection policy, Demand for smart power chips is growing rapidly. However, the harsh system application environment and unique internal structure tend to make the intelligent power chip temperature rise, resulting in reliability problems, so a high accuracy, It is very important for the reliability of the intelligent power chip and its application system to have a good internal temperature protection circuit. This paper first introduces the working principle and basic structure of the over-temperature protection circuit, and analyzes the on-chip temperature detection technology and its performance, as well as the problems existing in the traditional intelligent power chip over-temperature protection circuit. Combined with the practical application and characteristics of the intelligent power chip, the overtemperature protection is deeply analyzed and a high reliability overtemperature protection strategy is designed. Finally, the linearity of the transistor temperature detection circuit is studied emphatically. This paper presents an optimized temperature detection method for over-temperature protection circuit with three parameters, sensitivity and power supply voltage. A high-precision and low-power over-temperature protection circuit is designed for intelligent power chip and simulated by Cadence Spectre software. The circuit designed in this paper uses the base emitter voltage difference (VBE) of the Triode to detect the temperature, which improves the linearity of the circuit. Reducing the influence of voltage variation and process deviation of power supply on the open and off temperature points of overtemperature protection: the temperature detection method proposed in this paper has lower sensitivity in low temperature region and higher sensitivity in high temperature region. In order to reduce the output voltage of temperature detection based on VBE, the circuit can work at low power supply voltage, reduce the power consumption of the circuit, adopt the regenerative comparator and use its internal positive feedback to improve the conversion rate of the circuit. Thus, the accuracy of the overtemperature protection circuit is improved. The design is based on the flow sheet of China Resources China's 0.5 渭 m 600V SOI BCD process. The test results show that the average temperature detection sensitivity of the designed over-temperature protection circuit is greater than that of 11mV/ 鈩，

本文編號(hào)：2274219