【摘要】：浸沒式光刻是超大規(guī)模集成電路制造的核心技術(shù),它是在傳統(tǒng)的光刻基礎(chǔ)上在最后一層投影物鏡以及硅片之間填充一層高折射率的液體,從而提高縫隙介質(zhì)的折射率,提高曝光的最小分辨率以及焦深。浸沒單元是浸沒液體傳送及控制的核心部件,并充當(dāng)光路系統(tǒng)的一部分。曝光過程中的熱量及光刻膠表面污染物的脫離泄露會(huì)污染浸沒液體,從而影響最終的成像質(zhì)量。目前主要通過浸沒單元快速更新浸沒液體從而帶走污染物及熱量。然而,在循環(huán)過程中,浸沒流場的壓力也會(huì)對最后一層投影物鏡產(chǎn)生力的作用,造成投影物鏡的變形、偏移等,并影響最終的曝光質(zhì)量。因此有必要對浸沒流場壓力進(jìn)行研究。本課題以專項(xiàng)大綱對浸沒流場的壓力指標(biāo)為標(biāo)準(zhǔn),以最后一層物鏡下表面為受力面,通過數(shù)值仿真和實(shí)驗(yàn)檢測的方式對流場壓力進(jìn)行研究,并完成以下工作:1.建立了浸沒流場的動(dòng)力學(xué)模型,對無掃描運(yùn)動(dòng)穩(wěn)態(tài)工況、恒定最大掃描速度工況、以及幾種典型的掃描路徑工況下流場壓力進(jìn)行了仿真,得出流場壓力的大致分布規(guī)律,并進(jìn)行參數(shù)化仿真實(shí)驗(yàn),通過數(shù)值仿真研究不同參數(shù)對流場壓力的影響;2.設(shè)計(jì)浸沒流場壓力檢測實(shí)驗(yàn)方案。在專項(xiàng)大綱給定的流場壓力測試方案的基礎(chǔ)上根據(jù)數(shù)值仿真的結(jié)果設(shè)計(jì)一套新的流場壓力檢測傳感器布局方案。并通過Labview設(shè)計(jì)流場壓力采集程序,采購相應(yīng)實(shí)驗(yàn)設(shè)備并搭建實(shí)驗(yàn)平臺進(jìn)行調(diào)試。3.通過控制變量的方式,對不同流場參數(shù),包括注液流量、垂直回收負(fù)壓、水平回收負(fù)壓、縫隙高度、以及掃描運(yùn)動(dòng)在內(nèi),對流場壓力的影響進(jìn)行了實(shí)驗(yàn),并分析實(shí)驗(yàn)結(jié)果,驗(yàn)證仿真結(jié)果的可靠性,并找到這些參數(shù)對流場壓力的影響規(guī)律,指導(dǎo)流場參數(shù)調(diào)節(jié),從而保證流場壓力在合理范圍內(nèi)。
[Abstract]:Immersion lithography is the core technology of VLSI manufacturing. It is based on traditional lithography and fills a layer of liquid with high refractive index between the last layer projection objective lens and silicon wafer, thus increasing the refractive index of slit medium. Increase the minimum resolution and depth of exposure. Immersion unit is the core component of submerged liquid transmission and control, and acts as part of the optical path system. The heat in the exposure process and the release of photoresist surface contaminants will contaminate the immersion liquid, which will affect the final imaging quality. At present, soaking liquid is rapidly updated by immersion unit to remove contaminants and heat. However, during the cycle, the pressure immersed in the flow field will also produce force on the last layer of the projective objective lens, resulting in the deformation and deviation of the projective objective lens, and affecting the final exposure quality. Therefore, it is necessary to study the pressure of submerged flow field. In this paper, the pressure index of submerged flow field is taken as the standard, the surface of the last objective lens is taken as the force surface, the flow field pressure is studied by numerical simulation and experimental detection, and the following work is accomplished: 1. The dynamic model of submerged flow field is established. The steady state condition of no scanning motion, the constant maximum scanning velocity condition and the flow field pressure under several typical scanning path conditions are simulated, and the general distribution law of the flow field pressure is obtained. Parametric simulation experiments are carried out to study the effect of different parameters on the flow field pressure through numerical simulation. 2. The experimental scheme of pressure detection in submerged flow field is designed. On the basis of the flow field pressure test scheme given in the special outline, a new sensor layout scheme for flow field pressure detection is designed according to the results of numerical simulation. And through Labview design flow field pressure acquisition program, procurement of corresponding experimental equipment and build experimental platform for debugging. 3. The effects of flow field parameters, including injection flow rate, vertical recovery negative pressure, horizontal recovery negative pressure, gap height, and scanning motion, on the flow field pressure were studied and the results were analyzed by means of controlling the variables, including the flow rate, the vertical recovery negative pressure, the horizontal recovery negative pressure, the gap height and the scanning motion. The reliability of the simulation results is verified and the influence law of these parameters on the flow field pressure is found to guide the flow field parameter adjustment so as to ensure that the flow field pressure is within a reasonable range.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN305.7;O35

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