【摘要】：報道了一款應用于Ku波段的GaN T/R MMIC。該芯片采用0.15μm GaN HEMT器件工藝制造,集成了T/R組件的接收通道和發(fā)射通道,芯片面積7.00mm×3.32mm。研制的MMIC集成了5位數字衰減器、5位數字移相器、前級低噪聲放大器、后級低噪聲放大器、驅動放大器、功率放大器、公用支路的小信號開關和收發(fā)切換的功率開關。在16~17GHz工作頻帶內測得該芯片接收通道增益大于21dB,噪聲系數小于3.5dB;發(fā)射通道增益大于20.8dB,飽和功率大于40.8dBm,功率附加效率典型值30%。該芯片上集成的5位數字移相器、5位數字衰減器功能正常,達到設計要求。
[Abstract]:This paper reports a GaN T / R MMIC. used in Ku band. The chip is fabricated by 0.15 渭 m GaN HEMT device process and integrates the receiving and transmitting channels of the T / R module. The chip area is 7.00mm 脳 3.32mmm. The developed MMIC integrates 5 bit digital attenuator, 5 bit digital phase shifter, front stage low noise amplifier, rear stage low noise amplifier, drive amplifier, power amplifier, public branch small signal switch and transceiver switching power switch. It is found that the gain of receiving channel is more than 21dB, the noise coefficient is less than 3.5dB, the gain of transmission channel is more than 20.8 dB, the saturation power is more than 40.8dBmand the typical additional efficiency is 30. The 5-bit digital phase shifter and 5-bit digital attenuator have normal function and meet the design requirements.
【作者單位】： 南京電子器件研究所微波毫米波單片集成和模塊電路重點實驗室;
【分類號】：TN402
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本文編號：2263961