16nm FinFET工藝信號EM問題的分析和解決
發(fā)布時間:2018-09-19 10:31
【摘要】:信號電遷移的問題在先進工藝節(jié)點越來越受到重視。通過一個基于16 nm TSMC工藝的SoC芯片,分析了Innovus和Voltus兩個工具在信號電遷移分析結(jié)果的差異。通過對成因的分析,解決了Innovus存在的問題,使得絕大多數(shù)信號電遷移問題在布局布線階段得到解決,大大縮短了后端設(shè)計收斂時間。
[Abstract]:The problem of signal electromigration has been paid more and more attention in advanced process nodes. Through a SoC chip based on 16 nm TSMC process, the difference between Innovus and Voltus in signal electromigration analysis is analyzed. Through the analysis of the cause of formation, the problem of Innovus is solved, and most of the signal electromigration problems are solved in the layout and wiring stage, and the convergence time of the back-end design is shortened greatly.
【作者單位】: 英偉達半導(dǎo)體科技(上海)有限公司北京分公司;
【分類號】:TN386
本文編號:2249880
[Abstract]:The problem of signal electromigration has been paid more and more attention in advanced process nodes. Through a SoC chip based on 16 nm TSMC process, the difference between Innovus and Voltus in signal electromigration analysis is analyzed. Through the analysis of the cause of formation, the problem of Innovus is solved, and most of the signal electromigration problems are solved in the layout and wiring stage, and the convergence time of the back-end design is shortened greatly.
【作者單位】: 英偉達半導(dǎo)體科技(上海)有限公司北京分公司;
【分類號】:TN386
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