【摘要】：SiC材料是公認的高溫半導體材料,在高溫MEMS器件領(lǐng)域得到了越來越多的重視和應用。目前,針對其微尺度力學性能的研究已經(jīng)取得了一定程度的進展,但仍未形成統(tǒng)一的力學參數(shù)標準,更是缺乏對高溫環(huán)境下溫度特性的研究。本文基于諧振法測量的原理,建立了基于組合懸臂梁的理論模型,搭建了適用于不同溫度下的測試系統(tǒng),獲得了不同溫度下微尺度SiC薄膜楊氏模量的力學參數(shù),研究了其高溫下的溫度特性。具體包括以下幾個方面的內(nèi)容:1.基礎(chǔ)理論研究:推導了微尺度薄膜材料楊氏模量的計算公式,分析了懸臂梁結(jié)構(gòu)的設(shè)計準則,研究了膜厚對組合懸臂梁尺寸設(shè)計的影響,并通過仿真分析確定了懸臂梁結(jié)構(gòu)的尺寸參數(shù)。2.測試系統(tǒng)搭建:關(guān)鍵在于高溫環(huán)境的實現(xiàn)、高溫環(huán)境下的激勵及其檢測。以MCH陶瓷加熱片作為加熱元件,K型熱電偶作為溫度傳感元件,并利用紅外測溫儀測量實際溫度,實現(xiàn)高溫實驗環(huán)境;采用機械激振器實現(xiàn)懸臂梁結(jié)構(gòu)的激勵;利用Polytec激光測振儀對振動頻率進行檢測。3.測試系統(tǒng)驗證:對單晶硅[100]晶向的楊氏模量進行了測量。常溫下的實驗結(jié)果為132.5GPa,與文獻值(129.5GPa)的誤差為2.3%,驗證了系統(tǒng)的可行性。對其不同溫度下的楊氏模量值進行了測量。4.力學參數(shù)測試:對SiC薄膜楊氏模量的溫度特性進行了研究。SiC樣片的膜厚分別為5.3μm和7.9μm,常溫下的實驗結(jié)果分別為322.9±29.1GPa和345.5±40.8GPa。獲得了微尺度SiC薄膜不同溫度下的楊氏模量值,實驗結(jié)果表明,隨著測量溫度的升高,楊氏模量呈現(xiàn)出明顯的下降趨勢。
[Abstract]:Silicon carbide (SiC) is a well-known high-temperature semiconductor material, which has attracted more and more attention and application in the field of high-temperature MEMS devices. At present, some progress has been made in the study of its micro-scale mechanical properties, but there is still no unified mechanical parameter standard, especially the study of temperature characteristics in high-temperature environment. Based on the principle of resonance method, a theoretical model of composite cantilever beam is established, and a testing system suitable for different temperatures is built. The mechanical parameters of Young's modulus of micro-scale SiC thin films at different temperatures are obtained, and the temperature characteristics at high temperatures are studied. The calculation formula of Young's modulus of micro-scale film material is given. The design criteria of cantilever beam structure are analyzed. The influence of film thickness on the dimension design of composite cantilever beam is studied. The dimension parameters of cantilever beam structure are determined by simulation analysis. 2. The test system is built: the key lies in the realization of high temperature environment, the excitation and detection of high temperature environment. MCH ceramic heating plate is used as heating element, K thermocouple is used as temperature sensing element, and infrared thermometer is used to measure the actual temperature to realize high temperature experimental environment; mechanical exciter is used to excite the cantilever beam structure; Polytec laser vibration detector is used to detect the vibration frequency. 3. Testing system verification: the crystal direction of single crystal silicon [100] The Young's modulus of SiC films was measured. The experimental results at room temperature were 132.5 GPa and the error was 2.3% compared with the reference values (129.5 GPa). The feasibility of the system was verified. The Young's modulus of SiC films at different temperatures was measured. 4. Mechanical parameters were tested: the temperature characteristics of Young's modulus of SiC films were studied. The thickness of SiC films was 5.3 microns, respectively. The Young's modulus of micro-scale SiC films at different temperatures was obtained. The results show that the Young's modulus decreases with the increase of temperature.
【學位授予單位】：國防科學技術(shù)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304.24;O348

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