【摘要】：隨著數(shù)據(jù)通信、無(wú)線通信以及航空航天系統(tǒng)的快速發(fā)展,射頻功率放大器在相控陣?yán)走_(dá)、點(diǎn)對(duì)點(diǎn)無(wú)線通信和電子對(duì)抗系統(tǒng)等領(lǐng)域的重要性不斷提高。高功率、高效率、低成本和小型化的功率放大器成為目前的研究趨勢(shì)。以GaN為代表的第三代半導(dǎo)體材料以寬禁帶、高電子遷移率、高擊穿電場(chǎng)、高熱導(dǎo)率、穩(wěn)定的化學(xué)性和強(qiáng)抗輻射能力等特點(diǎn),逐漸取代GaAs等第二代半導(dǎo)體材料。由GaN制成的高電子遷移率晶體管(GaNHEMT)功率器件,具有工作頻段高、功率密度高、耐高壓耐高溫等優(yōu)點(diǎn),目前已經(jīng)成為研制固態(tài)功率放大器的理想器件。本文主要利用GaN HEMT器件研制高功率功率放大器,并研究寬帶技術(shù)拓寬放大器工作頻段。本論文的主要工作如下：1、基于GaN HEMT管的高功率放大模塊的分析與設(shè)計(jì)。采用新型的GaN HEMT功率器件,設(shè)計(jì)了S波段的高功率放大模塊,包含多級(jí)級(jí)聯(lián)的射頻電路和實(shí)現(xiàn)特殊上電時(shí)序的控制電路；對(duì)電路進(jìn)行了整體裝配,系統(tǒng)地完成了該高功率放大器的設(shè)計(jì)與測(cè)試。測(cè)試結(jié)果表明：在2.7GHz-2.9GHz的范圍,功率放大器增益大于50dB,最大飽和輸出功率達(dá)到50dBm,功率附加效率(PAE)大于35%,與仿真結(jié)果較為吻合。2、基于GaN HEMT管的寬帶功率放大器的分析與設(shè)計(jì)。通過(guò)研究功率放大器的寬帶設(shè)計(jì)方法,采用平衡式放大器的結(jié)構(gòu),分別從寬帶匹配、寬帶功分網(wǎng)絡(luò)、偏置電路和散熱設(shè)計(jì)等方面對(duì)基于GaN HEMT器件的放大器進(jìn)行了設(shè)計(jì),實(shí)現(xiàn)了1GHz至3GHzGaN HEMT寬帶功率放大器,制作并測(cè)試了實(shí)物電路。實(shí)測(cè)結(jié)果與仿真結(jié)果一致,驗(yàn)證了平衡式功率放大器設(shè)計(jì)方案的可行性。
[Abstract]:With the rapid development of data communication, wireless communication and aerospace system, the importance of RF power amplifier in phased array radar, point-to-point wireless communication and electronic countermeasures system is increasing. High power, high efficiency, low cost and miniaturization of power amplifier become the current research trend. The second generation semiconductor materials, such as GaAs, are gradually replaced by the substituted semiconductor materials with the characteristics of wide band gap, high electron mobility, high breakdown electric field, high thermal conductivity, stable chemistry and strong radiation resistance. The main work of this dissertation is as follows: 1. The analysis and design of high power amplifier module based on GaN HEMT transistor. A S-band high power amplifier module is designed, which consists of a multi-stage cascaded RF circuit and a control circuit to realize a special power-on timing. The whole circuit is assembled and the design and test of the high power amplifier are completed systematically. The maximum saturated output power is 50dBm and the power additional efficiency (PAE) is more than 35%, which is in good agreement with the simulation results. 2. Analysis and design of broadband power amplifier based on GaN HEMT transistor. The amplifier based on GaN HEMT device is designed in the aspect of heat dissipation design. The broadband power amplifier from 1GHz to 3GHz GaN HEMT is realized. The practical circuit is fabricated and tested. The experimental results are consistent with the simulation results, which verifies the feasibility of the balanced power amplifier design.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：TN722.75
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本文編號(hào)：2228341