【摘要】：微電子集成技術(shù)經(jīng)過半世紀(jì)的發(fā)展,所遵循的摩爾定律已接近極限,進(jìn)一步發(fā)展遇到瓶頸,亟需技術(shù)突破。而"硅”這種制造大規(guī)模集成電路的半導(dǎo)體材料在電學(xué)特性研究和制造工藝改進(jìn)領(lǐng)域已經(jīng)非常完善,很難實(shí)現(xiàn)技術(shù)突破。近年來硅基光子學(xué)的研究成果表明硅和硅基作為一種新型的光子材料除本身優(yōu)良的電學(xué)特性外也展現(xiàn)出了良好的光學(xué)特性,并在實(shí)驗(yàn)室中初步實(shí)現(xiàn)了硅和硅基材料中光的產(chǎn)生、傳輸、調(diào)控、互連和探測等一系列功能。作為目前最具潛力的光電子集成方案之一,硅基光電子集成技術(shù)是繼微電子集成技術(shù)之后的又一革命性技術(shù),對(duì)于建設(shè)和實(shí)現(xiàn)未來信息化社會(huì)具有巨大的經(jīng)濟(jì)和戰(zhàn)略意義。硅基微環(huán)諧振器作為硅基光電子集成系統(tǒng)中的核心調(diào)制器件具有結(jié)構(gòu)尺寸小、集成度高、成本低等優(yōu)點(diǎn),通過其諧振特性結(jié)合硅材料的熱光效應(yīng)、等離子色散效應(yīng)、量子限制斯塔克效應(yīng)可在硅基集成系統(tǒng)中實(shí)現(xiàn)高速調(diào)制器、高速光開和可調(diào)諧濾波器等功能,是目前硅基器件中應(yīng)用最為廣泛的器件之一,極具研究價(jià)值。因此本論文對(duì)硅基微環(huán)諧振器的傳輸特性進(jìn)行了深入研究,主要工作如下：(1)通過耦合模理論(CMT)推導(dǎo)出了二維情況下硅基微環(huán)諧振器的耦合系數(shù),并通過數(shù)值仿真結(jié)果進(jìn)行了驗(yàn)證。最后得到了耦合系數(shù)與硅基微環(huán)諧振器結(jié)構(gòu)參數(shù)之間的關(guān)系。(2)通過時(shí)域有限差分法(FDTD)對(duì)硅基微環(huán)諧振器進(jìn)行了大量的數(shù)值仿真,得到了硅基微環(huán)諧振器結(jié)構(gòu)參數(shù)對(duì)器件傳輸光譜的影響,并對(duì)仿真結(jié)果進(jìn)行了理論分析。(3)引入微波網(wǎng)絡(luò)的概念,將硅基微環(huán)諧振器等效為一個(gè)四端口網(wǎng)絡(luò),通過耦合模理論和光波干涉法得到了該網(wǎng)絡(luò)的散射矩陣,并通過數(shù)值仿真對(duì)結(jié)果進(jìn)行了驗(yàn)證。
[Abstract]:After half a century's development of microelectronic integration technology, the Moore's law is near the limit, and the further development meets the bottleneck, which is in need of technical breakthrough. In recent years, the research results of silicon-based photonics show that silicon and silicon-based photonic materials, as a new type of photonic materials, exhibit good optical properties in addition to their own excellent electrical properties, and the generation of light in silicon and silicon-based materials has been preliminarily realized in the laboratory. A series of functions such as transmission, control, interconnection and detection. As one of the most promising optoelectronic integration schemes, silicon based optoelectronic integration technology is another revolutionary technology after microelectronic integration technology, which has great economic and strategic significance for the construction and realization of the future information society. As the core modulator of silicon based optoelectronic integrated system, silicon based microring resonator has the advantages of small structure, high integration and low cost. The resonant characteristics of silicon microring resonator are combined with the thermo-optical effect and plasma dispersion effect of silicon material. Quantum-limited Stark effect is one of the most widely used devices in silicon based devices, which can realize the functions of high speed modulator, high speed optical opening and tunable filter. Therefore, the transmission characteristics of silicon based micro ring resonator are studied in this paper. The main work is as follows: (1) the coupling coefficient of silicon based micro ring resonator is derived by coupling mode theory (CMT). The results are verified by numerical simulation. Finally, the relationship between the coupling coefficient and the structural parameters of the silicon based microring resonator is obtained. (2) A large number of numerical simulations of the silicon based micro ring resonator are carried out by using the finite-difference time-domain method (FDTD). The influence of the structure parameters of silicon based microring resonator on the transmission spectrum of the device is obtained, and the simulation results are analyzed theoretically. (3) the concept of microwave network is introduced, and the silicon based micro ring resonator is equivalent to a four-port network. The scattering matrix of the network is obtained by coupling mode theory and optical wave interferometry, and the results are verified by numerical simulation.
【學(xué)位授予單位】：山東大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN629.1

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本文編號(hào)：2226828