GaN HEMT器件和GaAs PHEMT器件對比特性研究
發(fā)布時間：2018-09-06 12:07
【摘要】：近幾十年以來,人類社會經(jīng)歷了三次半導體材料帶動的產(chǎn)業(yè)革命。第一代Si、Ge材料、第二代GaAs材料和InP以及第三代寬禁帶GaN和SiC材料分別引領(lǐng)了微電子領(lǐng)域的發(fā)展浪潮,實現(xiàn)了技術(shù)上的三次飛躍。GaN以其較高的禁帶寬度、高擊穿電場等優(yōu)勢,使GaN高電子遷移率晶體管(HEMT)作為第三代半導體器件的優(yōu)秀代表,在高頻微波、大功率、抗高壓等方面被廣泛應(yīng)用,在國防、通信、照明、電力、航空航天等領(lǐng)域具有不可替代的地位。GaN材料是一種寬禁帶半導體材料,它具有與眾不同的自發(fā)極化和壓電極化效應(yīng),使得基于GaN的HEMT器件可以在非摻雜的情況下產(chǎn)生二維電子氣。這在HEMT器件中是一巨大的優(yōu)勢。但是這兩種極化效應(yīng)也會在器件溝道內(nèi)產(chǎn)生—種獨有的散射,稱為極化庫侖場散射(pCF散射)。PCF散射源于GaN HEMT器件源漏間AlGaN勢壘層應(yīng)變分布的不均一性,這種非均勻性使得沿AlGaN/GaN異質(zhì)界面的極化電荷分布不均,從而產(chǎn)生PCF散射。已有的PCF散射研究僅局限于GaN HEMT器件本身,而沒有深入地與其它材料體系的器件進行對比分析研究。本文的GaN HEMT器件與GaAs PHEMT器件對比研究則填補了這一空白。GaAs材料與GaN材料一樣,均為直接帶隙半導體。它具有一些獨特的優(yōu)點。GaAs贗配高電子遷移率晶體管(PHEMT)不存在GaN HEMT器件固有的自發(fā)極化和壓電極化效應(yīng),其二維電子氣來源于勢壘層的摻雜。兩者都通過柵極來調(diào)控溝道載流子的輸運,因此GaAs PHEMT是首選的對比器件。通過對比分析研究,可進一步明確PCF散射在GaN HEMT器件中的獨特作用,為進一步提升GaN HEMT器件特性奠定基礎(chǔ)。本文分別制備了源漏間距為20μm和100μm的不同柵長的GaN HEMT和GaAs PHEMT的中央柵型器件,并對其進行了對比研究。1.GaN HEMT器件和GaAs PHEMT器件的載流子遷移率對比研究。分別測試了 GaN HEMT器件和GaAs PHEMT器件的電容-電壓(C-V)特性、電流-電壓(Ⅰ-Ⅴ)輸出特性、二極管特性和柵源寄生串聯(lián)電阻(Rs)特性。通過對比分析GaN HEMT器件和GaAs PHEMT器件載流子遷移率發(fā)現(xiàn):在GaN HEMT器件中,載流子遷移率隨柵偏壓(Vg)變化趨勢明顯與柵長和源漏間距相關(guān)。隨著柵長與源漏間距之比Lg/Lsd的減小,PCF散射比重上升,當PCF散射起主導作用時,載流子遷移率隨柵偏壓增大呈現(xiàn)不斷上升的趨勢。相同Lg/Lsd比例下,隨著柵長Lg的減小,PCF散射增強。在更短的柵長溝道內(nèi),AlGaN勢壘層應(yīng)變分布非均勻性增強,PCF散射的作用更強。在GaAs PHEMT器件中,載流子遷移率隨柵偏壓變化趨勢與柵長和源漏間距無關(guān)。不同柵長GaAs PHEMT器件的載流子遷移率變化趨勢均顯著地表現(xiàn)為隨柵偏壓先上升后下降,并且此趨勢不隨柵長以及Lg/Lsd的變化而改變。在柵偏壓較小時,電離雜質(zhì)散射起主導作用。隨著二維電子氣(2DEG)面密度的增加,2DEG對電離雜質(zhì)散射的庫侖屏蔽作用增強,載流子遷移率隨著Vg的增加而提高,達到極值點后(此時第二子能帶開始填充),隨Vg繼續(xù)增大,2DEG電子密度增加,電離雜質(zhì)散射繼續(xù)減弱,極化光學聲子散射(POP散射)和界面缺陷散射增強并成為主導散射機制,載流子遷移率隨Vg的增加而下降。GaN HEMT器件與GaAs PHEMT器件載流子遷移率隨Vg變化曲線差異主要源于GaN HEMT器件獨有的PCF散射。2.GaN HEMT器件和GaAs PHEMT器件的柵源寄生串聯(lián)電阻Rs特性對比研究。Rs特性直接決定了器件跨導。根據(jù)柵探針(Gate Probe)方法測試兩者隨柵偏壓變化的Rs特性,對Rs隨柵偏壓變化特性進行了分析。分析表明,GaN HEMT器件的Rs隨柵電流的增大而增強,GaAs PHEMT器件的Rs隨柵電流的增加而減弱;對應(yīng)相同器件結(jié)構(gòu)的GaN HEMT和GaAs PHEMT,GaN HEMT器件Rs的變化率遠大于GaAs PHEMT器件Rs的變化率。兩者的區(qū)別在于:對GaN HEMT器件而言,PCF散射是導致不同柵電流下Rs變化的主要原因;而對于GaAs PHEMT器件而言,Rs變化與電離施主雜質(zhì)庫侖散射有關(guān)。GaN HEMT器件沒有摻雜,不存在雜質(zhì)庫侖散射,其Rs變化原因只能來源于PCF散射。3.GaN HEMT器件和GaAs PHEMT器件的跨導特性對比研究。通過測定兩者的轉(zhuǎn)移特性曲線,微分求導得到相應(yīng)的跨導特性。發(fā)現(xiàn)兩者的跨導特性均表現(xiàn)為隨柵偏壓的增加而先升高后下降。在跨導降低區(qū)間,GaAs PHEMT器件的跨導負增長率比GaN HEMT器件的更高。在這里POP散射的增強使得Rs增大引起了跨導的下降,而GaN HEMT器件的PCF散射的影響減緩了跨導的下降幅度。利用PCF散射可減緩跨導衰減的特性,有助于解決GaN器件在功率放大器應(yīng)用中的線性失真問題。
[Abstract]:In recent decades, human society has experienced three industrial revolutions driven by semiconductor materials. The first generation Si, Ge, second generation GaAs, InP and third generation wide band gap GaN and SiC materials have led the development of microelectronics and achieved three technological leaps. GaN has higher band gap width, high breakdown electric field and so on. GaN high electron mobility transistor (HEMT) is an outstanding representative of the third generation semiconductor devices. It is widely used in high frequency microwave, high power, anti-high voltage and other fields. It has an irreplaceable position in defense, communications, lighting, power, aerospace and other fields. Spontaneous polarization and piezoelectric polarization make it possible for GaN-based HEMT devices to produce two-dimensional electron gases without doping. This is a huge advantage in HEMT devices. But these two polarization effects also produce a unique kind of scattering in the device channel, called polarized Coulomb field scattering (pCF scattering). PCF scattering originates from GaN HEMT devices. The inhomogeneity of the strain distribution in the AlGaN barrier layer between the source and the drain makes the polarized charge distribution along the AlGaN/GaN heterogeneous interface uneven, which results in PCF scattering.The existing research on PCF scattering is limited to GaN HEMT device itself, and has not been deeply compared with other materials. GaAs materials, like GaN materials, are direct band gap semiconductors. GaAs pseudo-high electron mobility transistors (PHEMT) have some unique advantages. GaAs pseudo-high electron mobility transistors (PHEMT) do not have inherent spontaneous polarization and piezoelectric polarization effects of GaN HEMT devices. Their two-dimensional electron gas originates from potential barrier layers. GaAs PHEMT is the preferred contrast device because both of them control channel carrier transport through a gate. The unique role of PCF scattering in GaN HEMT devices can be further clarified by comparative analysis, which lays a foundation for further improving the characteristics of GaN HEMT devices. The source-drain spacing of GaAs PHEMT is 20 and 100 microns respectively. Carrier mobility of GaN HEMT and GaAs PHEMT devices with the same gate length are compared. Capacitance-voltage (C-V) characteristics, current-voltage (I-V) output characteristics, diode characteristics and gate-source parasitic characteristics of GaN HEMT devices and GaAs PHEMT devices are tested respectively. Carrier mobility of GaN HEMT devices and GaAs PHEMT devices are compared and analyzed. It is found that the variation of carrier mobility with gate bias (Vg) is obviously related to gate length and source-drain spacing in GaN HEMT devices. In the same Lg/Lsd ratio, the scattering of PCF increases with the decrease of the gate length Lg. In the shorter channel, the heterogeneity of the strain distribution in the barrier layer of AlGaN increases, and the scattering of PCF becomes stronger. In GaAs PHEMT devices, the variation of the carrier mobility with the gate bias voltage tends to be the same. The carrier mobility of GaAs PHEMT devices with different gate lengths increases first and then decreases with the gate bias, and this trend does not change with the gate length and Lg/Lsd. Ionizing impurity scattering plays a dominant role when the gate bias is small. With the increase of 2-D electron gas (2DEG) surface density, the carrier mobility of GaAs PHEMT devices with different gate lengths increases first and then decreases. Additionally, the Coulomb shielding effect of 2DEG on the scattering of ionized impurities is enhanced, and the carrier mobility increases with the increase of Vg. After reaching the extreme point (at this time the second band begins to fill), with the increase of Vg, the electron density of 2DEG increases, the scattering of ionized impurities continues to weaken, the polarized optical phonon scattering (POP scattering) and the interface defect scattering increase and become. The difference between GaN HEMT device and GaAs PHEMT device in carrier mobility versus Vg is mainly due to the unique PCF scattering of GaN HEMT device. 2. Comparison of Rs characteristics between GaN HEMT device and GaAs PHEMT device. According to Gate Probe method, the Rs characteristics of GaN HEMT devices with gate bias are analyzed. The results show that Rs of GaAs PHEMT devices increase with gate current, Rs of GaAs PHEMT devices decrease with gate current, and Rs of GaN HEMT and GaAs PHEMT, GaN HEMT devices with the same device structure are analyzed. The difference between the two is that PCF scattering is the main reason for Rs variation under different gate currents for GaAs PHEMT devices, while for GaAs PHEMT devices, Rs variation is related to ionizing donor impurity Coulomb scattering. It is found that the transconductance of GaAs PHEMT and GaN HEMT increases first and then decreases with the increase of gate bias. The negative transconductance growth rate of GaN-HEMT devices is higher than that of GaN-HEMT devices. In this case, the increase of POP scattering causes the increase of Rs and the decrease of transconductance. The PCF scattering of GaN-HEMT devices reduces the decrease of transconductance. Problem.
【學位授予單位】：山東大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386
本文編號：2226306
[Abstract]:In recent decades, human society has experienced three industrial revolutions driven by semiconductor materials. The first generation Si, Ge, second generation GaAs, InP and third generation wide band gap GaN and SiC materials have led the development of microelectronics and achieved three technological leaps. GaN has higher band gap width, high breakdown electric field and so on. GaN high electron mobility transistor (HEMT) is an outstanding representative of the third generation semiconductor devices. It is widely used in high frequency microwave, high power, anti-high voltage and other fields. It has an irreplaceable position in defense, communications, lighting, power, aerospace and other fields. Spontaneous polarization and piezoelectric polarization make it possible for GaN-based HEMT devices to produce two-dimensional electron gases without doping. This is a huge advantage in HEMT devices. But these two polarization effects also produce a unique kind of scattering in the device channel, called polarized Coulomb field scattering (pCF scattering). PCF scattering originates from GaN HEMT devices. The inhomogeneity of the strain distribution in the AlGaN barrier layer between the source and the drain makes the polarized charge distribution along the AlGaN/GaN heterogeneous interface uneven, which results in PCF scattering.The existing research on PCF scattering is limited to GaN HEMT device itself, and has not been deeply compared with other materials. GaAs materials, like GaN materials, are direct band gap semiconductors. GaAs pseudo-high electron mobility transistors (PHEMT) have some unique advantages. GaAs pseudo-high electron mobility transistors (PHEMT) do not have inherent spontaneous polarization and piezoelectric polarization effects of GaN HEMT devices. Their two-dimensional electron gas originates from potential barrier layers. GaAs PHEMT is the preferred contrast device because both of them control channel carrier transport through a gate. The unique role of PCF scattering in GaN HEMT devices can be further clarified by comparative analysis, which lays a foundation for further improving the characteristics of GaN HEMT devices. The source-drain spacing of GaAs PHEMT is 20 and 100 microns respectively. Carrier mobility of GaN HEMT and GaAs PHEMT devices with the same gate length are compared. Capacitance-voltage (C-V) characteristics, current-voltage (I-V) output characteristics, diode characteristics and gate-source parasitic characteristics of GaN HEMT devices and GaAs PHEMT devices are tested respectively. Carrier mobility of GaN HEMT devices and GaAs PHEMT devices are compared and analyzed. It is found that the variation of carrier mobility with gate bias (Vg) is obviously related to gate length and source-drain spacing in GaN HEMT devices. In the same Lg/Lsd ratio, the scattering of PCF increases with the decrease of the gate length Lg. In the shorter channel, the heterogeneity of the strain distribution in the barrier layer of AlGaN increases, and the scattering of PCF becomes stronger. In GaAs PHEMT devices, the variation of the carrier mobility with the gate bias voltage tends to be the same. The carrier mobility of GaAs PHEMT devices with different gate lengths increases first and then decreases with the gate bias, and this trend does not change with the gate length and Lg/Lsd. Ionizing impurity scattering plays a dominant role when the gate bias is small. With the increase of 2-D electron gas (2DEG) surface density, the carrier mobility of GaAs PHEMT devices with different gate lengths increases first and then decreases. Additionally, the Coulomb shielding effect of 2DEG on the scattering of ionized impurities is enhanced, and the carrier mobility increases with the increase of Vg. After reaching the extreme point (at this time the second band begins to fill), with the increase of Vg, the electron density of 2DEG increases, the scattering of ionized impurities continues to weaken, the polarized optical phonon scattering (POP scattering) and the interface defect scattering increase and become. The difference between GaN HEMT device and GaAs PHEMT device in carrier mobility versus Vg is mainly due to the unique PCF scattering of GaN HEMT device. 2. Comparison of Rs characteristics between GaN HEMT device and GaAs PHEMT device. According to Gate Probe method, the Rs characteristics of GaN HEMT devices with gate bias are analyzed. The results show that Rs of GaAs PHEMT devices increase with gate current, Rs of GaAs PHEMT devices decrease with gate current, and Rs of GaN HEMT and GaAs PHEMT, GaN HEMT devices with the same device structure are analyzed. The difference between the two is that PCF scattering is the main reason for Rs variation under different gate currents for GaAs PHEMT devices, while for GaAs PHEMT devices, Rs variation is related to ionizing donor impurity Coulomb scattering. It is found that the transconductance of GaAs PHEMT and GaN HEMT increases first and then decreases with the increase of gate bias. The negative transconductance growth rate of GaN-HEMT devices is higher than that of GaN-HEMT devices. In this case, the increase of POP scattering causes the increase of Rs and the decrease of transconductance. The PCF scattering of GaN-HEMT devices reduces the decrease of transconductance. Problem.
【學位授予單位】：山東大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386
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