【摘要】：碳化硅(SiC)材料因其寬禁帶、高臨界電場(chǎng)和高熱導(dǎo)率等特性受到了行業(yè)的廣泛關(guān)注,近年來(lái)相繼推出了商品化的SiC功率器件,但可靠性問(wèn)題是制約其發(fā)展的瓶頸之一。眾所周知,功率器件的可靠性主要受高溫和高電場(chǎng)等瞬態(tài)非線性行為的影響,引起器件內(nèi)部參數(shù)和外部電特性的退化,從而降低器件的可靠性和使用壽命。為揭示SiC功率器件的瞬態(tài)非線性行為與其物理參數(shù)的內(nèi)在聯(lián)系,需借助于精確地器件模型來(lái)加以描述,然而現(xiàn)有的SiC功率器件模型多為線性模型,且沒(méi)有考慮結(jié)溫變化對(duì)其物理參數(shù)的實(shí)時(shí)影響,導(dǎo)致仿真精度具有一定的局限性。因此,開(kāi)展SiC功率器件的非線性建模對(duì)提高其可靠性和使用壽命具有重要意義。本文從SiC功率器件的工作機(jī)理出發(fā),針對(duì)SiC BJT和SiC MOSFET兩種功率器件進(jìn)行了非線性建模,首先采用Haar小波構(gòu)建了Si C BJT物理模型的數(shù)值分析方法,同時(shí)提出了一種基于時(shí)變溫度反饋的SiC MOSFET電熱耦合模型建模方法,在此基礎(chǔ)上開(kāi)展了SiC功率器件的瞬態(tài)非線性行為研究,仿真和實(shí)驗(yàn)結(jié)果的對(duì)比分析驗(yàn)證了以上方法的有效性。本文主要進(jìn)行了以下研究工作:(1)針對(duì)SiC BJT建模中雙極性擴(kuò)散方程(Ambipolar Diffusion Equation,ADE)求解精度的問(wèn)題,提出了基于Haar小波法的SiC BJT物理建模法。模型從SiC BJT工作機(jī)理出發(fā),利用半導(dǎo)體物理理論分析其內(nèi)部動(dòng)力學(xué)行為和各區(qū)間激勵(lì)與響應(yīng)的關(guān)系,將Haar小波法運(yùn)用于ADE求解中,仿真結(jié)果與傅里葉級(jí)數(shù)法進(jìn)行了對(duì)比,研究表明Haar小波法可有效提高器件物理模型的求解精度。(2)提出了一種基于時(shí)變溫度反饋的SiC MOSFET電熱耦合模型建模方法。模型從Si C MOSFET工作機(jī)理出發(fā),綜合分析了SiC MOSFET模塊、熱網(wǎng)絡(luò)模塊和功率損耗模塊的作用關(guān)系,將功率損耗和熱網(wǎng)絡(luò)模塊引入建模,實(shí)時(shí)反饋器件結(jié)溫和更新溫度相關(guān)參數(shù)。該方法能更好地反映SiC MOSFET在導(dǎo)通和開(kāi)關(guān)過(guò)程中的性能特點(diǎn),仿真結(jié)果驗(yàn)證了模型的可行性。(3)SiC MOSFET電熱耦合模型的應(yīng)用與實(shí)驗(yàn)驗(yàn)證。將SiC MOSFET功率器件應(yīng)用于E類逆變器中,設(shè)計(jì)了SiC MOSFET器件的驅(qū)動(dòng)電路,并搭建了E類逆變器實(shí)驗(yàn)樣機(jī)。SiC MOSFET采用CREE公司的C2M0160120D,實(shí)驗(yàn)結(jié)果證實(shí)了模型的有效性。
[Abstract]:Silicon carbide (SiC) materials have attracted wide attention due to their wide band gap, high critical electric field and high thermal conductivity. In recent years, commercial SiC power devices have been introduced, but reliability is one of the bottlenecks to its development. It is well known that the reliability of power devices is mainly affected by transient nonlinear behavior such as high temperature and high electric field, which results in the degradation of internal parameters and external electrical characteristics of the devices, thus reducing the reliability and service life of the devices. In order to reveal the relationship between the transient nonlinear behavior of SiC power devices and their physical parameters, it is necessary to describe them by means of precise device models. However, most of the existing SiC power device models are linear models. The real time effect of junction temperature on its physical parameters is not considered, which leads to the limitation of simulation precision. Therefore, it is important to develop nonlinear modeling of SiC power device to improve its reliability and service life. Based on the working mechanism of SiC power devices, the nonlinear modeling of SiC BJT and SiC MOSFET power devices is presented in this paper. Firstly, a numerical analysis method of Si C BJT physical model based on Haar wavelet is constructed. At the same time, a modeling method of SiC MOSFET electrothermal coupling model based on time-varying temperature feedback is proposed. On this basis, the transient nonlinear behavior of SiC power devices is studied. The effectiveness of the above method is verified by the comparison of simulation and experimental results. The main work of this paper is as follows: (1) aiming at the accuracy of solving bipolar diffusion equation (Ambipolar Diffusion Equation,ADE) in SiC BJT modeling, a SiC BJT physical modeling method based on Haar wavelet method is proposed. Based on the working mechanism of SiC BJT, the dynamic behavior of the model and the relation between the excitation and response of each interval are analyzed by using the semiconductor physics theory. The Haar wavelet method is applied to the solution of ADE. The simulation results are compared with the Fourier series method. The results show that Haar wavelet method can effectively improve the accuracy of the device physical model. (2) A SiC MOSFET electrothermal coupling model modeling method based on time-varying temperature feedback is proposed. Based on the working mechanism of Si C MOSFET, the relationship among SiC MOSFET module, thermal network module and power loss module is analyzed synthetically. The power loss and thermal network module are introduced into the model, and the real-time feedback device junction and temperature parameters are updated. This method can better reflect the performance characteristics of SiC MOSFET in the process of conduction and switching. The simulation results verify the feasibility of the model. (3) the application and experimental verification of the electrothermal coupling model of) SiC MOSFET. The SiC MOSFET power device is applied to the class E inverter, and the driving circuit of the SiC MOSFET device is designed. The experimental prototype of the class E inverter. Sic MOSFET uses C2M0160120D of CREE Company. The experimental results prove the validity of the model.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN386

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本文編號(hào)：2218490