【摘要】：在IC芯片封裝成型過(guò)程中,由于封裝熔體充填流動(dòng)與IC芯片的熱流固耦合作用使IC芯片產(chǎn)生耦合變形,這會(huì)嚴(yán)重影響IC芯片的性能。然而,如何準(zhǔn)確預(yù)測(cè)和精密控制IC芯片的熱流固耦合變形至今仍是IC芯片封裝成型亟待解決的工程技術(shù)難題。國(guó)際上現(xiàn)有的基于純黏性牛頓流體的熱流固耦合變形預(yù)測(cè)理論難以準(zhǔn)確描述IC芯片的熱流固耦合變形形成機(jī)理,為此研究建立真實(shí)描述黏彈性熔體與IC芯片的黏彈性熱流固耦合效應(yīng)產(chǎn)生的變形的形成機(jī)理理論模型對(duì)于預(yù)測(cè)和精密控制IC芯片的熱流固耦合變形顯得尤為重要。而至今這一科學(xué)問(wèn)題仍未得到解決,為此本文開(kāi)展了這一科學(xué)問(wèn)題的理論研究,并以此研究建立了IC芯片的黏彈性熱流固耦合變形形成過(guò)程的虛擬仿真技術(shù)。本文構(gòu)建了黏彈性熱流固耦合變形與黏彈性流變性能參數(shù)和過(guò)程工藝參數(shù)的關(guān)聯(lián)理論,揭示了黏彈性熱流固耦合變形形成機(jī)理,使IC封塑成型工藝與模具的設(shè)計(jì)做到“有章可循”,為實(shí)現(xiàn)IC封塑成型加工從“摸索制造”到以科學(xué)求質(zhì)量、以技術(shù)保成功的“全流程綜合控制的工業(yè)化科學(xué)制造”的飛躍轉(zhuǎn)變奠定了科學(xué)的理論基礎(chǔ)。黏彈性和純黏性熔體IC封塑成型過(guò)程的對(duì)比分析研究結(jié)果表明黏彈性熔體和IC芯片熱流固耦合效應(yīng)與純黏性熔體和IC芯片熱流固耦合效應(yīng)有著本質(zhì)的差異,研究黏彈性熔體與IC芯片的熱流固耦合作用機(jī)制,探討IC芯片在黏彈性熔體與IC芯片熱流固耦合壓力場(chǎng)、溫度場(chǎng)和應(yīng)力場(chǎng)的多場(chǎng)協(xié)同作用下的變形機(jī)制是準(zhǔn)確預(yù)測(cè)IC芯片熱流固耦合變形和研發(fā)IC芯片熱流固耦合變形精密控形技術(shù)的理論前提。本文基于PTT黏彈性本構(gòu)模型,研究建立了準(zhǔn)確描述IC封塑成型過(guò)程中黏彈性熔體充填流動(dòng)與IC芯片固體熱流固耦合效應(yīng)及其IC芯片黏彈性熱流固多場(chǎng)耦合作用變形理論模型,并以此研究建立了IC芯片的黏彈性熱流固耦合變形形成過(guò)程的虛擬仿真技術(shù),為揭示聚合物黏彈性熔體填充環(huán)境下IC芯片的變形機(jī)制提供了理論支撐。研究建立了黏彈性熱流固耦合變形與黏彈性流變性能參數(shù)和過(guò)程工藝參數(shù)的關(guān)聯(lián)理論,IC芯片的熱流固耦合變形隨填充熔體參考黏度、黏度比、注射速度的增大而增大,而隨熔體松弛時(shí)間和模壁溫度的增大而減小。研究發(fā)現(xiàn)聚合物熔體的黏彈特性對(duì)IC芯片熱流固耦合變形形成的本質(zhì)影響是減小了IC芯片上下表面的熱流固耦合壓力差和黏彈性熔體的流動(dòng)正應(yīng)力對(duì)IC芯片形成了彈性支撐約束作用,從而導(dǎo)致黏彈性熔體充填流動(dòng)誘發(fā)的IC芯片熱流固耦合變形明顯小于純黏性牛頓熔體充填流動(dòng)誘發(fā)的IC芯片熱流固耦合變形。研究發(fā)現(xiàn)黏彈性熔體與IC芯片熱流固耦合變形的主控參數(shù)是IC芯片上下表面的熱流固耦合壓力差,黏彈性熔體與IC芯片共軛耦合傳熱誘發(fā)的不均勻溫度場(chǎng)對(duì)IC芯片熱流固耦合變形起促進(jìn)作用,其促進(jìn)作用隨著熔體充填流動(dòng)時(shí)間增大而增強(qiáng),而黏彈性熔體的流動(dòng)正應(yīng)力場(chǎng)對(duì)IC芯片熱流固耦合變形起抑制作用,其抑制作用隨著熔體充填流動(dòng)時(shí)間增大而減弱。
[Abstract]:In the process of IC chip packaging, the coupling deformation between the filling flow of package melt and the thermal-fluid-structure interaction of IC chip will seriously affect the performance of IC chip. It is difficult to accurately describe the formation mechanism of Thermal-Fluid-solid coupling deformation of IC chips based on the existing theory of Thermo-Fluid-Solid coupling deformation prediction based on pure viscous Newtonian fluids. Therefore, a theoretical model is established to describe the formation mechanism of Thermal-Fluid-solid coupling deformation of viscoelastic melts and IC chips. It is very important to control the Thermal-Fluid-solid coupling deformation of IC chips. However, this scientific problem has not been solved yet. Therefore, the theoretical study of this scientific problem is carried out in this paper, and the virtual simulation technology of the viscoelastic Thermal-Fluid-solid coupling deformation process of IC chips is established. The theory of correlation between deformation and viscoelastic rheological parameters and process parameters reveals the forming mechanism of viscoelastic Thermo-Fluid-Solid coupling deformation, which makes the design of IC molding process and die "rule-based", and realizes the "whole process synthesis" of IC molding process from "exploring manufacturing" to "seeking quality scientifically" to ensure the success of technology. The theoretical basis for the leap forward transformation of "integrated control of industrial scientific manufacturing" has been laid. The results of comparative analysis of viscoelastic and pure viscous melt IC molding process show that there is essential difference between viscoelastic melt and IC chip Thermo-Fluid-Solid coupling effect and pure viscoelastic melt and IC chip Thermo-Fluid-Solid coupling effect. The mechanism of thermo-fluid-structure interaction between IC chip and IC chip is discussed. The deformation mechanism of IC chip under the interaction of viscoelastic melt and IC chip's Thermo-Fluid-Solid coupling pressure field, temperature field and stress field is the theoretical premise of accurately predicting the Thermo-Fluid-Solid coupling deformation of IC chip and developing the precise Thermo-Fluid-Solid coupling deformation control technology of IC chip. Based on the PTT viscoelastic constitutive model, a theoretical model for accurately describing the Thermal-Fluid-solid coupling effect of viscoelastic melt filling flow and IC chip and the viscoelastic-thermo-fluid-solid multi-field coupling deformation of IC chip was established, and a virtual model for the formation of viscoelastic-thermo-fluid-solid coupling deformation of IC chip was established. The simulation technology provides theoretical support for revealing the deformation mechanism of IC chips in the environment of polymer viscoelastic melt filling. It is found that the viscoelastic properties of polymer melt have an essential effect on the formation of Thermal-Fluid-solid coupling deformation of IC chips, which reduces the difference of Thermal-Fluid-solid coupling pressure between the upper and lower surfaces of IC chips and the flow stress of viscoelastic melt. The Thermal-Fluid-solid coupling deformation induced by viscoelastic melt filling flow is less than that induced by pure viscous Newtonian melt filling flow. It is found that the main control parameter of the Thermal-Fluid-solid coupling deformation between viscoelastic melt and IC chip is the Thermal-Fluid-solid coupling pressure on the upper and lower surfaces of IC chip. The non-uniform temperature field induced by conjugate heat transfer between viscoelastic melt and IC chip promotes the Thermal-Fluid-solid coupling deformation of IC chip, and the enhancement effect increases with the increase of melt filling time. The flow normal stress field of viscoelastic melt inhibits the Thermal-Fluid-solid coupling deformation of IC chip, and the inhibition effect increases with the melt filling time. The filling time increases and decreases.
【學(xué)位授予單位】：南昌大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN405

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本文編號(hào)：2209878