【摘要】：LD泵浦的全固態(tài)中紅外2 μm波段脈沖激光器由于其在醫(yī)療、材料加工、科研、軍事以及作為其他中紅外激光泵浦源方面的廣泛應(yīng)用得到了人們越來越多的關(guān)注。各類新型二維材料為激光的發(fā)展進步提供了新的機遇。鎖模激光技術(shù)作為產(chǎn)生超短脈沖激光的根本途徑,也成為當前2μm波段脈沖激光發(fā)展中一個重要的研究領(lǐng)域。論文以Tm3+摻雜和Tm3+/Ho3+共同摻雜晶體為激光增益介質(zhì),分別利用不同新型二維光學材料和銻化物量子阱半導體材料為飽和吸收體,開展了 2 μm波段調(diào)Q、雙調(diào)Q以及鎖模激光特性的研究。具體內(nèi)容總結(jié)如下:Ⅰ.基于石墨烯(graphene)實現(xiàn)了 2μm波段W級輸出,獲得最短脈寬為235 ns。Ⅱ.基于熱氧化分解法制備了二硫化鎢(WS2),并進行性能表征�；诖瞬牧�,實現(xiàn)了 LD泵浦2μm波段Tm:LuAG晶體調(diào)Q輸出,最短脈寬為660 ns。Ⅲ.利用氣相沉積法得到了二硫化鉬(MoS2)并進行表征,實現(xiàn)LD泵浦2 μm波段Tm,Ho:YAP晶體調(diào)Q脈沖激光輸出。Ⅳ.基于聲光/石墨烯(AOM/graphene)雙損耗調(diào)制技術(shù)實現(xiàn)了 LD泵浦Tm:LuAG晶體全固態(tài)2μm波段脈沖激光運轉(zhuǎn),獲得的最大脈寬壓縮比和峰值功率提高比分別為3.11和97.4,同時輸出脈沖穩(wěn)定性得到了大幅度提升。實驗結(jié)果表明雙損耗調(diào)制技術(shù)可用于2μm波段脈沖激光,并有效地壓縮脈寬,提高峰值功率和脈沖穩(wěn)定性。Ⅴ.基于電光/砷化鎵(EOM/GaAs)雙損耗調(diào)制技術(shù)實現(xiàn)了2μm波段Tm,Ho:YAP脈沖激光運轉(zhuǎn),獲得的最短脈寬和最高峰值功率分別為28ns和74kW,這是目前為止LD泵浦全固態(tài)2 μm波段脈沖激光的最大峰值功率。Ⅵ.基于碳納米管/石墨烯(MWCNT/graphene)雙損耗調(diào)制技術(shù)實現(xiàn)了 2 μm波段Tm:LuAG脈沖激光運轉(zhuǎn),并研究了雙被動開關(guān)調(diào)制技術(shù)脈寬壓縮機理。研究結(jié)果表明,雙被動開關(guān)調(diào)制技術(shù)脈寬壓縮的原因不僅是雙被動開關(guān)調(diào)制下具有大的插入損耗,更是因為兩種不同材料具有不同渡越時間,作用于不同的脈沖形成階段。Ⅶ.利用新型銻化物量子阱,實現(xiàn)了 LD泵浦2μm波段Tm:LuAG超快運轉(zhuǎn),獲得的脈寬為13.6ps,這是目前為止利用Tm:LuAG晶體得到的最短鎖模脈寬。論文的主要創(chuàng)新工作包括:Ⅰ.首次實現(xiàn)了LD泵浦Tm:LuAG晶體全固態(tài)2μm波段graphene調(diào)Q激光輸出,獲得了2μm波段graphene調(diào)Q激光的最高輸出功率和最短脈寬。Ⅱ.證明了WS2在2 μm波段具有飽和吸收特性,并首次實現(xiàn)了2μm波段Tm:LuAG晶體WS2調(diào)Q激光輸出,最短脈寬660ns。Ⅲ.首次實現(xiàn)了 LD泵浦2μm波段Tm,Ho:YAP晶體MoS2被動調(diào)Q運轉(zhuǎn),最短脈寬435 ns,峰值功率達10 W以上。Ⅳ.首次實現(xiàn)了 LD泵浦2μm波段Tm:LuAG晶體AOM/graphene雙調(diào)Q激光輸出,最短脈寬170ns,峰值功率達3117W。Ⅴ.首次實現(xiàn)了 LD泵浦Tm,Ho:YAP晶體EOM/GaAs雙調(diào)Q激光輸出,最短脈寬28 ns,最高峰值功率74 kW。Ⅵ.首次實現(xiàn)了 LD泵浦Tm:LuAG晶體2 μm波段MWCNT/graphene雙調(diào)Q輸出,最短脈寬102 ns,最高峰值功率為171 W。Ⅶ.基于GaSb-SESAM,首次實現(xiàn)了 LD泵浦Tm:LuAG晶體2 μm波段連續(xù)波鎖模,脈寬為13.6 ps。
[Abstract]:LD-pumped all-solid-state mid-infrared 2-micron-band pulsed laser has attracted more and more attention due to its wide applications in medical, material processing, scientific research, military and other mid-infrared laser pumping sources. Various new two-dimensional materials provide new opportunities for the development and progress of laser. Mode-locked laser technology as a production The fundamental way to generate ultrashort pulsed lasers has also become an important research field in the development of 2-micron-band pulsed lasers. In this paper, Tm3+ doped and Tm3+/Ho3+ co-doped crystals are used as laser gain media to develop 2-micron wave using different two-dimensional optical materials and antimonide quantum well semiconductor materials as saturated absorbers, respectively. The detailed contents are summarized as follows: 1. Based on graphene, the W-level output of 2 micron band is realized, and the shortest pulse width is 235 ns. 2. Based on thermal oxidation decomposition method, tungsten disulfide (WS2) is prepared and its properties are characterized. Molybdenum disulfide (MoS2) was obtained by vapor deposition and characterized. LD-pumped 2-micron band Tm, Ho:YAP Q-switched pulsed laser output was realized. IV. LD-pumped Tm:LuAG crystal pulsed laser operation at 2-micron band was realized based on AOM/graphene dual-loss modulation technique. The maximum pulse compression ratio and peak power enhancement ratio are 3.11 and 97.4, respectively, and the output pulse stability is greatly improved. The experimental results show that the dual-loss modulation technique can be used in 2-micron-band pulsed laser, and can effectively compress the pulse width, improve the peak power and pulse stability. V. Based on the electro-optical/GaAs dual-loss The modulation technique realizes the operation of 2-micron Tm, Ho:YAP pulsed laser. The shortest pulse width and the highest peak power are 28 ns and 74 kW, respectively. This is the highest peak power of LD-pumped all-solid-state 2-micron pulsed laser up to now. VI. The 2-micron Tm:LuAG based on the MWCNT/graphene dual-loss modulation technique is realized. Pulse width compression mechanism of double passive switching modulation technique is studied. The results show that the reason for pulse width compression of double passive switching modulation technique is not only the large insertion loss under double passive switching modulation, but also the effect of two different materials on different pulse forming stages with different transit time. LD-pumped 2-micron band Tm:LuAG ultra-fast operation has been achieved by using a novel antimonide quantum well with a pulse width of 13.6 PS. This is the shortest mode-locked pulse width obtained by using Tm:LuAG crystal up to now. The main innovations in this paper include: I. LD-pumped Tm:LuAG crystal graphene Q-switched laser output in all-solid-state at 2 micron band has been realized for the first time, and 2 micron pulse width has been obtained. Maximum output power and shortest pulse width of M-band graphene Q-switched laser.II.It is proved that WS2 has saturated absorption characteristics in 2 micron band.The output of 2 micron band Tm:LuAG crystal WS2 Q-switched laser is realized for the first time with the shortest pulse width of 660 ns.III.LD-pumped 2 micron band Tm,Ho:YAP crystal MoS2 passively Q-switched operation is realized for the first time with the shortest pulse width of 435 ns and peak power. LD-pumped Tm:LuAG crystal AOM/graphene double-Q-switched laser with a minimum pulse width of 170 ns and a peak power of 3117 W.V. LD-pumped Tm, Ho:YAP crystal EOM/GaAs double-Q-switched laser with a minimum pulse width of 28 ns and a maximum peak power of 74 kW.VI has been realized for the first time. MWCNT/graphene dual-Q-switched output with a minimum pulse width of 102 ns and a maximum peak power of 171 W._. Based on GaSb-SESAM, the LD-pumped Tm:LuAG crystal mode-locked in 2 micron band is realized for the first time with a pulse width of 13.6 PS.
【學位授予單位】：山東大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN24

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相關(guān)博士學位論文 前1條

1 馮天利;全固態(tài)中紅外2μm波段激光特性研究[D];山東大學;2015年

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本文編號：2206396