【摘要】：生物芯片技術(shù)的日益興起,使得生命科學領(lǐng)域大量的、復(fù)雜的數(shù)據(jù)采集和處理分析工作可以實現(xiàn)集成化、微型化、連續(xù)化。而生物芯片制作的一個關(guān)鍵環(huán)節(jié)就是芯片基底材料的選取與合理利用,生物芯片本身的特點要求我們對所使用材料的極微小尺度、超快物理過程有更為透徹的理解。本文主要針對可以作為生物芯片基底材料的納米硅薄膜超快動力學特性進行研究。為了對納米硅薄膜超快動力學特性的分析進行對比和鋪墊,本文也進行了金屬銅薄膜的超快動力學分析。主要研究內(nèi)容如下：(1)使用磁控濺射法制備出納米銅薄膜和納米硅薄膜；(2)使用飛秒激光瞬態(tài)反射技術(shù),測量納米銅薄膜和納米硅薄膜的瞬態(tài)反射規(guī)律,得出不同脈沖激光強度作用下的瞬態(tài)反射率變化數(shù)據(jù),并通過反射率變化規(guī)律分析其內(nèi)部的超快載流子輸運過程和超快熱輸運過程微觀機制；(3)通過對受激載流子濃度定量的計算,分析納米硅薄膜載流子輸運過程對瞬態(tài)反射率的貢獻；建立擴散模型模擬納米硅薄膜載流子濃度衰減過程,通過模型計算出表面復(fù)合速率為S=4×105cm/s,體復(fù)合時間隨著泵浦光能量的增強而縮短。(4)使用雙溫模型模擬銅薄膜的超快熱輸運過程,經(jīng)過計算得出銅薄膜電聲耦合系數(shù)為G=1.2×1016W/m3K；在掌握了金屬雙溫模型的基礎(chǔ)上,建立了可以用于分析半導(dǎo)體超快載流子輸運過程和超快熱輸運過程的雙溫模型。
[Abstract]:With the increasing development of biochip technology, a large number of complex data acquisition and analysis work in the field of life science can be integrated, miniaturized and continuous. The selection and rational use of substrate materials is a key step in the fabrication of biochips. The characteristics of biochips require us to have a more thorough understanding of the very small scale and ultrafast physical process of the materials used. In this paper, the ultrafast kinetic characteristics of nanocrystalline silicon films which can be used as biochip substrates are studied. In order to compare the ultrafast kinetic characteristics of nanocrystalline silicon thin films and pave the way, the ultrafast kinetic analysis of copper thin films was also carried out in this paper. The main contents are as follows: (1) nanocrystalline copper thin films and nanocrystalline silicon thin films were prepared by magnetron sputtering; (2) transient reflection patterns of nanocrystalline copper and silicon thin films were measured by femtosecond laser transient reflection technique. The transient reflectivity data of different pulse laser intensity are obtained, and the microscopic mechanism of ultra-fast carrier transport and ultra-fast thermal transport is analyzed through the reflectivity variation law. (3) through quantitative calculation of stimulated carrier concentration, the contribution of carrier transport process to transient reflectivity is analyzed, and a diffusion model is established to simulate the carrier concentration attenuation process of nanocrystalline silicon thin films. The surface recombination rate is calculated to be 4 脳 10 ~ 5 cm / s, and the volume recombination time is shortened with the increase of pump energy. (4) the ultra-fast thermal transport process of copper thin films is simulated by using the dual-temperature model. The electroacoustic coupling coefficient of copper thin films is calculated to be 1.2 脳 10 ~ (16) W / m ~ (3K); Based on the metal double temperature model, a double temperature model is established for the analysis of semiconductor ultrafast carrier transport process and ultra fast heat transport process.
【學位授予單位】：東北林業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN401;Q81

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本文編號：2204985