【摘要】：高頻電力電子技術(shù)的快速發(fā)展對電路中常用主開關(guān)器件(如IGBT、GTO及IGCT等)的性能要求不斷提升,同時要求與之配套使用的續(xù)流二極管具有優(yōu)良的電學(xué)性能和較高的可靠性。目前,高壓快速軟恢復(fù)二極管(FSRD)性能的改善主要是通過結(jié)構(gòu)優(yōu)化和載流子壽命控制來實現(xiàn),其中壽命控制技術(shù)對其特性和可靠性有重要的影響。本文首先重點分析了高、低能電子輻照引入的復(fù)合中心種類及少數(shù)載流子壽命對器件特性的影響。其次利用CASINO和SRIM程序分析了高、低能電子輻照及H+輻照在硅中所形成的缺陷分布,最后利用ISE仿真軟件分析了不同輻照方法對高壓快速軟恢復(fù)二極管特性和抗動態(tài)雪崩、抗浪涌電流特性的影響,主要研究內(nèi)容如下:第一,簡述了高壓FSRD的特性對少數(shù)載流子壽命的要求,分析了不同輻照方法所產(chǎn)生的缺陷能級參數(shù),分析了輻照在硅中產(chǎn)生缺陷能級的最佳位置和少數(shù)載流子壽命對器件特性的影響。第二,采用CASINO軟件分析了高、低能電子輻照在硅中形成的缺陷分布,確定了仿真所用的器件結(jié)構(gòu)和物理模型參數(shù),然后基于ISE-TCAD軟件平臺,建立了高壓FSRD的輻照模型,研究了高、低能電子輻照產(chǎn)生的缺陷分布對高壓FSRD各項特性的影響。第三,利用SRIM程序分析了 H+輻照在硅中形成的缺陷分布,然后通過ISE-TCAD軟件中的輻照模型,將電子輻照與H+輻照結(jié)合后形成的缺陷分布引入高壓二極管中,研究了不同的缺陷分布對高壓二極管各項特性的影響。第四,對比了不同輻照條件下FSRD的特性,分析了不同方法輻照對器件抗動態(tài)雪崩和抗浪涌電流特性的影響。本文的研究成果可以為高壓FSRD的設(shè)計與研發(fā)提供一定的參考。
[Abstract]:With the rapid development of high-frequency power electronics technology, the performance of the main switch devices (such as IGBT,GTO and IGCT) is constantly improved, and the recurrent diodes used with them are required to have excellent electrical performance and high reliability. At present, the performance improvement of high voltage fast soft recovery diode (FSRD) is mainly realized by structure optimization and carrier life control, in which life control technology has an important impact on its characteristics and reliability. In this paper, the influence of the type of recombination centers and the lifetime of minority carriers on the characteristics of the devices induced by high and low energy electron irradiation is analyzed. Secondly, the defect distribution caused by high and low energy electron irradiation and H irradiation in silicon was analyzed by CASINO and SRIM program. Finally, the characteristics of high voltage fast soft recovery diode and the resistance to dynamic avalanche were analyzed by ISE simulation software. The main contents of this paper are as follows: first, the requirements of the characteristics of high voltage FSRD on the lifetime of minority carriers are briefly described, and the defect energy level parameters produced by different irradiation methods are analyzed. The effects of the optimum position of the defect level and the minority carrier lifetime on the characteristics of the device are analyzed. Secondly, the defect distribution of high and low energy electron irradiation in silicon is analyzed by using CASINO software, and the device structure and physical model parameters used in simulation are determined. Then, based on the ISE-TCAD software platform, the irradiation model of high voltage FSRD is established, and the high voltage FSRD radiation model is studied. The effect of defect distribution induced by low energy electron irradiation on the characteristics of high pressure FSRD. Thirdly, the defect distribution formed by H irradiation in silicon is analyzed by SRIM program, and then the defect distribution formed by electron irradiation combined with H irradiation is introduced into high voltage diodes through the irradiation model in ISE-TCAD software. The effects of different defect distributions on the characteristics of high voltage diodes are studied. Fourthly, the characteristics of FSRD under different irradiation conditions are compared, and the effects of different irradiation methods on the anti-dynamic avalanche and anti-surge current characteristics of the devices are analyzed. The research results in this paper can provide some reference for the design and development of high-voltage FSRD.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN31

【參考文獻】

相關(guān)期刊論文 前6條

1 高建寧;陳芳林;張明;郭潤慶;;IGCT配套FRD器件的性能優(yōu)化[J];大功率變流技術(shù);2015年05期

2 J.VobeckY;R.Siegrist;M.Arnold;K.Tugan;張斌;;用于IGCT的具有很高SOA能力的大面積快恢復(fù)二極管[J];電力電子;2011年04期

3 謝書珊;胡冬青;亢寶位;;高壓功率快恢復(fù)二極管的壽命控制研究[J];固體電子學(xué)研究與進展;2008年01期

4 潘飛蹊,陳星弼;MLD結(jié)構(gòu)快恢復(fù)二極管t_(rr)-T特性的理論分析[J];半導(dǎo)體學(xué)報;2005年01期

5 賈云鵬,亢寶位,吳郁,吳鶴;高壓半導(dǎo)體功率器件的壽命控制工程述評[J];電力電子技術(shù);2003年06期

6 張海濤,張斌,王均平;采用緩沖層結(jié)構(gòu)的軟恢復(fù)二極管研究[J];電力電子技術(shù);2003年02期

相關(guān)碩士學(xué)位論文 前10條

1 景中正;少子壽命分布對快恢復(fù)二極管特性影響的仿真研究[D];沈陽工業(yè)大學(xué);2016年

2 蘇陶;基于TCAD的晶閘管設(shè)計與模擬研究[D];合肥工業(yè)大學(xué);2013年

3 董方媛;PIN二極管反向恢復(fù)機理的研究[D];沈陽工業(yè)大學(xué);2013年

4 王智;快恢復(fù)二極管的研究[D];電子科技大學(xué);2012年

5 朱勇;鈦酸鋇輻射損傷的計算機模擬研究[D];湘潭大學(xué);2011年

6 段福莉;4H-SiC PiN二極管少子壽命的研究[D];西安電子科技大學(xué);2011年

7 邢毅;150A/1200V快速軟恢復(fù)功率二極管的設(shè)計與試制[D];西安理工大學(xué);2010年

8 張鑫峗;電子輻照帶蓋片GaAs/Ge太陽電池性能演化及退火效應(yīng)研究[D];哈爾濱工業(yè)大學(xué);2009年

9 孫永生;5kV非對稱GCT的高溫特性分析與優(yōu)化設(shè)計[D];西安理工大學(xué);2009年

10 程泊軒;4H-SiC PiN二極管抗輻照特性研究[D];西安電子科技大學(xué);2009年

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