摻氟二氧化錫基薄膜激光表面處理及其光電性能優(yōu)化研究
發(fā)布時(shí)間：2018-08-25 11:18
【摘要】：摻氟二氧化錫(FTO)薄膜作為透明導(dǎo)電氧化(TCO)薄膜,因其化學(xué)性質(zhì)穩(wěn)定,可見(jiàn)光區(qū)具有高透光率以及良好的導(dǎo)電性等優(yōu)點(diǎn),被廣泛的應(yīng)用于太陽(yáng)能電池、氣敏傳感器、液晶顯示屏等領(lǐng)域。但由于傳統(tǒng)工藝制備的FTO薄膜,其光電性能往往無(wú)法滿足當(dāng)前快速發(fā)展光電器件的需求,為此研究者們集中于對(duì)FTO薄膜進(jìn)行后續(xù)處理的研究。本文在調(diào)研薄膜激光表面處理相關(guān)研究的基礎(chǔ)上,提出基于聚對(duì)苯二甲酸乙二酯(PET)貼膜和金屬Ti層復(fù)合兩種方式的FTO薄膜激光表面處理方法,著重研究激光參數(shù)對(duì)薄膜表面形貌、晶體結(jié)構(gòu)、光學(xué)性能以及電學(xué)性能的影響,獲得了一些有意義的結(jié)果。1、采用532 nm波長(zhǎng)的納秒脈沖激光對(duì)貼附了PET膜的FTO薄膜進(jìn)行表面處理,著重研究激光能量密度和掃描速度對(duì)FTO薄膜光電性能的影響。采用掃描電子顯微鏡、X射線衍射儀、紫外-可見(jiàn)分光光度計(jì)和四探針測(cè)試儀對(duì)FTO薄膜的表面形貌、晶體結(jié)構(gòu)、透光率和方塊電阻進(jìn)行表征,并采用品質(zhì)因子(FTC)對(duì)FTO薄膜的光電性能進(jìn)行綜合評(píng)估。實(shí)驗(yàn)結(jié)果表明,貼附PET膜不僅可以拓寬激光工藝參數(shù),避免FTO薄膜受到損傷,而且可以使薄膜表面獲得更好的退火效果。其中,當(dāng)激光能量密度為1.2 J/cm2、掃描速度為10.0 mm/s時(shí),薄膜的綜合光電性能最佳。其在400~800 nm波段的平均透光率為82.0%,方塊電阻為7.9Ω/sq,品質(zhì)因子為1.7×10~( 2)Ω~( 1),相比原始FTO薄膜品質(zhì)因子(1.1×10~( 2)Ω~( 1))提高了54.5%。2、采用直流磁控濺射法,在FTO薄膜表面復(fù)合金屬Ti層制備Ti/FTO復(fù)合薄膜,研究了Ti層厚度對(duì)Ti/FTO薄膜光電性能的影響。結(jié)果發(fā)現(xiàn),當(dāng)Ti層厚度為10 nm時(shí),復(fù)合薄膜的品質(zhì)因子值最大,為1.3×10~( 2)Ω~( 1)。再利用532 nm波長(zhǎng)的納秒脈沖激光對(duì)優(yōu)化制備的Ti/FTO薄膜進(jìn)行表面處理,主要研究激光能量密度和線間距對(duì)復(fù)合薄膜形貌、結(jié)構(gòu)和光電性能的影響。實(shí)驗(yàn)結(jié)果表明,采用適當(dāng)?shù)募す饽芰棵芏群途�間距對(duì)薄膜進(jìn)行表面處理,一方面激光對(duì)復(fù)合薄膜表面起到退火作用,促進(jìn)了復(fù)合薄膜的晶粒生長(zhǎng)、消除部分晶體缺陷;另一方面促使Ti層氧化成TiO_2層,最終使薄膜的綜合光電性能得到提升。其中,當(dāng)激光能量密度為0.8 J/cm2、線間距為20.0μm時(shí),Ti層完全氧化成TiO_2層,此時(shí)激光退火效果最好,TiO_2/FTO復(fù)合薄膜的綜合光電性能最佳。其中,在400~800 nm波段范圍內(nèi)平均透光率為83.4%,方塊電阻為8.7?/sq,品質(zhì)因子為1.9×10~( 2)Ω~( 1),相比單層FTO薄膜的品質(zhì)因子(1.2×10~( 2)Ω~( 1))提高了58.3%。
[Abstract]:As a transparent conductive and oxidized (TCO) film, (FTO) thin film doped with fluorine has been widely used in solar cells and gas sensors because of its stable chemical properties, high transmittance and good conductivity in visible region. Liquid crystal display screen and other fields. However, the optoelectronic properties of FTO thin films prepared by traditional technology are often unable to meet the needs of the rapid development of optoelectronic devices. Therefore, researchers focus on the follow-up processing of FTO thin films. In this paper, based on the investigation of laser surface treatment of thin films, a laser surface treatment method for FTO thin films based on the composite of (PET) film and metal Ti layer is proposed. The effects of laser parameters on the surface morphology, crystal structure, optical properties and electrical properties of the films were studied. Some significant results were obtained. The nanosecond pulsed laser at 532 nm wavelength was used to treat the FTO films with PET films. The effects of laser energy density and scanning speed on the photoelectric properties of FTO thin films are studied. The surface morphology, crystal structure, transmittance and square resistance of FTO thin films were characterized by scanning electron microscope (SEM), UV-Vis spectrophotometer and four-probe tester. The quality factor (FTC) was used to evaluate the photoelectric properties of FTO films. The experimental results show that the attached PET film can not only widen the laser processing parameters and avoid the damage of the FTO film, but also can obtain better annealing effect on the surface of the film. When the laser energy density is 1.2 J / cm ~ 2 and the scanning speed is 10.0 mm/s, the comprehensive photoelectric properties of the films are the best. Its average transmittance at 400-800 nm band is 82.0, the square resistance is 7.9 惟 / sqand the quality factor is 1.7 脳 10 ~ (2) 惟 ~ (-1). Compared with the original FTO film's quality factor (1.1 脳 10 ~ (2) 惟 ~ (-1), the Ti/FTO composite film is prepared by DC magnetron sputtering. The effect of the thickness of Ti layer on the optical and electrical properties of Ti/FTO thin films was investigated. The results show that when the thickness of Ti layer is 10 nm, the quality factor of the composite film is the highest, which is 1.3 脳 10 ~ (2) 惟 ~ (-1). The surface of the optimized Ti/FTO thin films was treated with 532nm nanosecond pulsed laser. The effects of laser energy density and line spacing on the morphology, structure and optoelectronic properties of the composite films were studied. The experimental results show that the appropriate laser energy density and line spacing are used to treat the surface of the composite film. On the one hand, the laser annealing on the surface of the composite film can promote the grain growth of the composite film and eliminate some crystal defects. On the other hand, the Ti layer is oxidized into TiO_2 layer, and the comprehensive photoelectric property of the film is improved. When the laser energy density is 0.8 J / cm ~ 2 and the line spacing is 20.0 渭 m, the Ti layer is completely oxidized to TiO_2 layer, and the laser annealing effect is the best. The comprehensive photoelectric properties of TiO2 / FTO composite thin films are the best. The average transmittance is 83.4, the square resistance is 8.7 / sqand the quality factor is 1.9 脳 10 ~ (2) 惟 ~ (-1), which is 58.3% higher than that of the monolayer FTO film (1.2 脳 10 ~ (2) 惟 ~ (-1).
【學(xué)位授予單位】：江蘇大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TB383.2;TN249
本文編號(hào)：2202714
[Abstract]:As a transparent conductive and oxidized (TCO) film, (FTO) thin film doped with fluorine has been widely used in solar cells and gas sensors because of its stable chemical properties, high transmittance and good conductivity in visible region. Liquid crystal display screen and other fields. However, the optoelectronic properties of FTO thin films prepared by traditional technology are often unable to meet the needs of the rapid development of optoelectronic devices. Therefore, researchers focus on the follow-up processing of FTO thin films. In this paper, based on the investigation of laser surface treatment of thin films, a laser surface treatment method for FTO thin films based on the composite of (PET) film and metal Ti layer is proposed. The effects of laser parameters on the surface morphology, crystal structure, optical properties and electrical properties of the films were studied. Some significant results were obtained. The nanosecond pulsed laser at 532 nm wavelength was used to treat the FTO films with PET films. The effects of laser energy density and scanning speed on the photoelectric properties of FTO thin films are studied. The surface morphology, crystal structure, transmittance and square resistance of FTO thin films were characterized by scanning electron microscope (SEM), UV-Vis spectrophotometer and four-probe tester. The quality factor (FTC) was used to evaluate the photoelectric properties of FTO films. The experimental results show that the attached PET film can not only widen the laser processing parameters and avoid the damage of the FTO film, but also can obtain better annealing effect on the surface of the film. When the laser energy density is 1.2 J / cm ~ 2 and the scanning speed is 10.0 mm/s, the comprehensive photoelectric properties of the films are the best. Its average transmittance at 400-800 nm band is 82.0, the square resistance is 7.9 惟 / sqand the quality factor is 1.7 脳 10 ~ (2) 惟 ~ (-1). Compared with the original FTO film's quality factor (1.1 脳 10 ~ (2) 惟 ~ (-1), the Ti/FTO composite film is prepared by DC magnetron sputtering. The effect of the thickness of Ti layer on the optical and electrical properties of Ti/FTO thin films was investigated. The results show that when the thickness of Ti layer is 10 nm, the quality factor of the composite film is the highest, which is 1.3 脳 10 ~ (2) 惟 ~ (-1). The surface of the optimized Ti/FTO thin films was treated with 532nm nanosecond pulsed laser. The effects of laser energy density and line spacing on the morphology, structure and optoelectronic properties of the composite films were studied. The experimental results show that the appropriate laser energy density and line spacing are used to treat the surface of the composite film. On the one hand, the laser annealing on the surface of the composite film can promote the grain growth of the composite film and eliminate some crystal defects. On the other hand, the Ti layer is oxidized into TiO_2 layer, and the comprehensive photoelectric property of the film is improved. When the laser energy density is 0.8 J / cm ~ 2 and the line spacing is 20.0 渭 m, the Ti layer is completely oxidized to TiO_2 layer, and the laser annealing effect is the best. The comprehensive photoelectric properties of TiO2 / FTO composite thin films are the best. The average transmittance is 83.4, the square resistance is 8.7 / sqand the quality factor is 1.9 脳 10 ~ (2) 惟 ~ (-1), which is 58.3% higher than that of the monolayer FTO film (1.2 脳 10 ~ (2) 惟 ~ (-1).
【學(xué)位授予單位】：江蘇大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TB383.2;TN249
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