ZnO基透明導電薄膜的濕化學制備
發(fā)布時間：2018-08-22 17:35
【摘要】：ZnO原料豐富且無污染,是一種直接帶隙寬禁帶半導體材料,其禁帶寬度為3.37 eV,激子結合能達到60 me V。ZnO薄膜具有優(yōu)良的光電性能,在太陽能電池、晶體管、發(fā)光器件等方面有良好的應用前景。ZnO薄膜的制備方法主要有磁控濺射法等物理氣相沉積法、化學氣相沉積法以及濕化學法。其中濕化學方法所需設備簡單,能夠在襯底上實現(xiàn)大面積薄膜制備。在本論文中,我們采用溶膠-凝膠法和化學浴沉積法兩種濕化學方法制備ZnO基透明導電薄膜。以X射線衍射(XRD)、掃描電子顯微鏡(SEM)、X射線光電子能譜分析(XPS)、紫外可見分光光度計、四探針法等分析測試方法對薄膜樣品的結構、形貌、化學組成以及光電性能進行表征。本論文的主要內容如下:(1)在查閱相關文獻的基礎上,對ZnO的基本結構和光電性質進行簡單歸納,重點綜述了ZnO薄膜的濕化學制備方法。(2)通過溶膠-凝膠法制備了Si摻雜ZnO(ZnO:Si)薄膜,并對其進行紫外光照射和氫氣還原處理來提高ZnO:Si薄膜的電導率。ZnO:Si薄膜的最低電阻為1.6 k?/□,透光率在80%以上。(3)采用溶膠-凝膠法制備了CuO及ZnO/Cu O/ZnO薄膜,經(jīng)氫氣還原后獲得Cu及ZnO/Cu/ZnO薄膜。Cu膜的電阻為10?/□,但ZnO/Cu/ZnO多層膜的電阻較高,為10 k?/□。這是由于Cu在ZnO中的浸潤性較差,在多層膜中形成了島狀分散的Cu晶粒。(4)我們采用化學浴沉積法制備了In摻雜ZnO(ZnO:In)薄膜。通過改變溶劑組成,實現(xiàn)了薄膜擇優(yōu)取向從[002]晶向到[100]和[110]晶向的可控調節(jié)。同時系統(tǒng)探討了沉積時間、前驅體濃度、水浴溫度等對ZnO:In薄膜織構的影響。研究表明,ZnO:In薄膜的擇優(yōu)取向與其最快生長晶向一致。
[Abstract]:ZnO is a kind of semiconductor material with direct band gap and wide band gap. Its band gap width is 3.37 eV and exciton binding energy is 60 me V. ZnO thin film has excellent photoelectric properties. It has good application prospects in solar cells, transistors, light-emitting devices and other fields. The preparation methods of ZnO thin films mainly include magnetron sputtering and other physical methods. Vapor deposition, chemical vapor deposition, and wet chemical methods. Wet chemical methods require simple equipment and can be used to prepare large-area thin films on substrates. In this paper, we used two wet chemical methods, sol-gel method and chemical bath deposition method, to prepare ZnO-based transparent conductive thin films. X-ray diffraction (XRD), scanning electron microscopy (SEM) Microscope (SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrophotometer, four-probe method and other analytical methods were used to characterize the structure, morphology, chemical composition and photoelectric properties of the thin films. The main contents of this paper are as follows: (1) On the basis of consulting relevant literatures, the basic structure and photoelectric properties of ZnO were simply classified. (2) Si-doped ZnO (ZnO: Si) thin films were prepared by sol-gel method, and the conductivity of ZnO: Si thin films was improved by ultraviolet irradiation and hydrogen reduction. The minimum resistance of ZnO: Si thin films was 1.6 k?/, and the transmittance was above 80%. (3) CuO thin films were prepared by sol-gel method. Cu and ZnO/Cu/ZnO films were obtained by hydrogen reduction. The resistance of Cu films was 10?/, but that of ZnO/Cu/ZnO multilayers was 10 k?/. This was due to the poor wettability of Cu in ZnO, and the island-like dispersed Cu grains were formed in the multilayers. (4) In-doped ZnO (ZnO: In) thin films were prepared by chemical bath deposition. The effect of deposition time, precursor concentration and water bath temperature on the texture of ZnO:In films was investigated systematically. The results show that the preferred orientation of ZnO:In films is consistent with its fastest growing orientation.
【學位授予單位】：江蘇大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN304.05
[Abstract]:ZnO is a kind of semiconductor material with direct band gap and wide band gap. Its band gap width is 3.37 eV and exciton binding energy is 60 me V. ZnO thin film has excellent photoelectric properties. It has good application prospects in solar cells, transistors, light-emitting devices and other fields. The preparation methods of ZnO thin films mainly include magnetron sputtering and other physical methods. Vapor deposition, chemical vapor deposition, and wet chemical methods. Wet chemical methods require simple equipment and can be used to prepare large-area thin films on substrates. In this paper, we used two wet chemical methods, sol-gel method and chemical bath deposition method, to prepare ZnO-based transparent conductive thin films. X-ray diffraction (XRD), scanning electron microscopy (SEM) Microscope (SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrophotometer, four-probe method and other analytical methods were used to characterize the structure, morphology, chemical composition and photoelectric properties of the thin films. The main contents of this paper are as follows: (1) On the basis of consulting relevant literatures, the basic structure and photoelectric properties of ZnO were simply classified. (2) Si-doped ZnO (ZnO: Si) thin films were prepared by sol-gel method, and the conductivity of ZnO: Si thin films was improved by ultraviolet irradiation and hydrogen reduction. The minimum resistance of ZnO: Si thin films was 1.6 k?/, and the transmittance was above 80%. (3) CuO thin films were prepared by sol-gel method. Cu and ZnO/Cu/ZnO films were obtained by hydrogen reduction. The resistance of Cu films was 10?/, but that of ZnO/Cu/ZnO multilayers was 10 k?/. This was due to the poor wettability of Cu in ZnO, and the island-like dispersed Cu grains were formed in the multilayers. (4) In-doped ZnO (ZnO: In) thin films were prepared by chemical bath deposition. The effect of deposition time, precursor concentration and water bath temperature on the texture of ZnO:In films was investigated systematically. The results show that the preferred orientation of ZnO:In films is consistent with its fastest growing orientation.
【學位授予單位】：江蘇大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN304.05
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