ZnO基透明導(dǎo)電薄膜的濕化學(xué)制備
發(fā)布時(shí)間：2018-08-22 17:35
【摘要】：ZnO原料豐富且無(wú)污染,是一種直接帶隙寬禁帶半導(dǎo)體材料,其禁帶寬度為3.37 eV,激子結(jié)合能達(dá)到60 me V。ZnO薄膜具有優(yōu)良的光電性能,在太陽(yáng)能電池、晶體管、發(fā)光器件等方面有良好的應(yīng)用前景。ZnO薄膜的制備方法主要有磁控濺射法等物理氣相沉積法、化學(xué)氣相沉積法以及濕化學(xué)法。其中濕化學(xué)方法所需設(shè)備簡(jiǎn)單,能夠在襯底上實(shí)現(xiàn)大面積薄膜制備。在本論文中,我們采用溶膠-凝膠法和化學(xué)浴沉積法兩種濕化學(xué)方法制備ZnO基透明導(dǎo)電薄膜。以X射線(xiàn)衍射(XRD)、掃描電子顯微鏡(SEM)、X射線(xiàn)光電子能譜分析(XPS)、紫外可見(jiàn)分光光度計(jì)、四探針?lè)ǖ确治鰷y(cè)試方法對(duì)薄膜樣品的結(jié)構(gòu)、形貌、化學(xué)組成以及光電性能進(jìn)行表征。本論文的主要內(nèi)容如下:(1)在查閱相關(guān)文獻(xiàn)的基礎(chǔ)上,對(duì)ZnO的基本結(jié)構(gòu)和光電性質(zhì)進(jìn)行簡(jiǎn)單歸納,重點(diǎn)綜述了ZnO薄膜的濕化學(xué)制備方法。(2)通過(guò)溶膠-凝膠法制備了Si摻雜ZnO(ZnO:Si)薄膜,并對(duì)其進(jìn)行紫外光照射和氫氣還原處理來(lái)提高ZnO:Si薄膜的電導(dǎo)率。ZnO:Si薄膜的最低電阻為1.6 k?/□,透光率在80%以上。(3)采用溶膠-凝膠法制備了CuO及ZnO/Cu O/ZnO薄膜,經(jīng)氫氣還原后獲得Cu及ZnO/Cu/ZnO薄膜。Cu膜的電阻為10?/□,但ZnO/Cu/ZnO多層膜的電阻較高,為10 k?/□。這是由于Cu在ZnO中的浸潤(rùn)性較差,在多層膜中形成了島狀分散的Cu晶粒。(4)我們采用化學(xué)浴沉積法制備了In摻雜ZnO(ZnO:In)薄膜。通過(guò)改變?nèi)軇┙M成,實(shí)現(xiàn)了薄膜擇優(yōu)取向從[002]晶向到[100]和[110]晶向的可控調(diào)節(jié)。同時(shí)系統(tǒng)探討了沉積時(shí)間、前驅(qū)體濃度、水浴溫度等對(duì)ZnO:In薄膜織構(gòu)的影響。研究表明,ZnO:In薄膜的擇優(yōu)取向與其最快生長(zhǎng)晶向一致。
[Abstract]:ZnO is a kind of semiconductor material with direct band gap and wide band gap. Its band gap width is 3.37 eV and exciton binding energy is 60 me V. ZnO thin film has excellent photoelectric properties. It has good application prospects in solar cells, transistors, light-emitting devices and other fields. The preparation methods of ZnO thin films mainly include magnetron sputtering and other physical methods. Vapor deposition, chemical vapor deposition, and wet chemical methods. Wet chemical methods require simple equipment and can be used to prepare large-area thin films on substrates. In this paper, we used two wet chemical methods, sol-gel method and chemical bath deposition method, to prepare ZnO-based transparent conductive thin films. X-ray diffraction (XRD), scanning electron microscopy (SEM) Microscope (SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrophotometer, four-probe method and other analytical methods were used to characterize the structure, morphology, chemical composition and photoelectric properties of the thin films. The main contents of this paper are as follows: (1) On the basis of consulting relevant literatures, the basic structure and photoelectric properties of ZnO were simply classified. (2) Si-doped ZnO (ZnO: Si) thin films were prepared by sol-gel method, and the conductivity of ZnO: Si thin films was improved by ultraviolet irradiation and hydrogen reduction. The minimum resistance of ZnO: Si thin films was 1.6 k?/, and the transmittance was above 80%. (3) CuO thin films were prepared by sol-gel method. Cu and ZnO/Cu/ZnO films were obtained by hydrogen reduction. The resistance of Cu films was 10?/, but that of ZnO/Cu/ZnO multilayers was 10 k?/. This was due to the poor wettability of Cu in ZnO, and the island-like dispersed Cu grains were formed in the multilayers. (4) In-doped ZnO (ZnO: In) thin films were prepared by chemical bath deposition. The effect of deposition time, precursor concentration and water bath temperature on the texture of ZnO:In films was investigated systematically. The results show that the preferred orientation of ZnO:In films is consistent with its fastest growing orientation.
【學(xué)位授予單位】：江蘇大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：TN304.05
[Abstract]:ZnO is a kind of semiconductor material with direct band gap and wide band gap. Its band gap width is 3.37 eV and exciton binding energy is 60 me V. ZnO thin film has excellent photoelectric properties. It has good application prospects in solar cells, transistors, light-emitting devices and other fields. The preparation methods of ZnO thin films mainly include magnetron sputtering and other physical methods. Vapor deposition, chemical vapor deposition, and wet chemical methods. Wet chemical methods require simple equipment and can be used to prepare large-area thin films on substrates. In this paper, we used two wet chemical methods, sol-gel method and chemical bath deposition method, to prepare ZnO-based transparent conductive thin films. X-ray diffraction (XRD), scanning electron microscopy (SEM) Microscope (SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrophotometer, four-probe method and other analytical methods were used to characterize the structure, morphology, chemical composition and photoelectric properties of the thin films. The main contents of this paper are as follows: (1) On the basis of consulting relevant literatures, the basic structure and photoelectric properties of ZnO were simply classified. (2) Si-doped ZnO (ZnO: Si) thin films were prepared by sol-gel method, and the conductivity of ZnO: Si thin films was improved by ultraviolet irradiation and hydrogen reduction. The minimum resistance of ZnO: Si thin films was 1.6 k?/, and the transmittance was above 80%. (3) CuO thin films were prepared by sol-gel method. Cu and ZnO/Cu/ZnO films were obtained by hydrogen reduction. The resistance of Cu films was 10?/, but that of ZnO/Cu/ZnO multilayers was 10 k?/. This was due to the poor wettability of Cu in ZnO, and the island-like dispersed Cu grains were formed in the multilayers. (4) In-doped ZnO (ZnO: In) thin films were prepared by chemical bath deposition. The effect of deposition time, precursor concentration and water bath temperature on the texture of ZnO:In films was investigated systematically. The results show that the preferred orientation of ZnO:In films is consistent with its fastest growing orientation.
【學(xué)位授予單位】：江蘇大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：TN304.05
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