【摘要】：首先采用多靶射頻磁控共濺射結(jié)合后退火工藝制備了摻Er富硅氧化硅MIS(金屬-絕緣體-半導(dǎo)體結(jié)構(gòu))電致發(fā)光器件,然后通過電致發(fā)光(EL)以及電流-電壓(I-U)特性測(cè)量對(duì)發(fā)光器件的光電性能進(jìn)行表征.最后,通過對(duì)比不同富硅含量的發(fā)光器件的載流子輸運(yùn)機(jī)制,并通過分析器件中的電荷俘獲過程,對(duì)富硅氧化硅器件中鉺離子電致發(fā)光的激發(fā)和猝滅機(jī)制進(jìn)行了解釋.結(jié)果表明:富硅的存在改變了MIS發(fā)光器件中的載流子輸運(yùn)過程,造成外加電場(chǎng)下注入的電子能量降低,進(jìn)而降低Er離子發(fā)光中心的激發(fā)效率;而富硅引入的缺陷態(tài)會(huì)引起電荷俘獲及俄歇效應(yīng),也會(huì)使得發(fā)光中心發(fā)生非輻射復(fù)合過程.
[Abstract]:Firstly, er rich silicon oxide MIS (metal-insulator semiconductor structure) electroluminescent devices were fabricated by multi-target RF magnetron co-sputtering and annealing. The photoelectric properties of the devices were characterized by electroluminescent (EL) and current-voltage (I-U) measurements. Finally, the excitation and quenching mechanisms of erbium ion electroluminescence in silicon-rich silicon oxide devices are explained by comparing the carrier transport mechanisms of the devices with different silicon rich contents and analyzing the charge capture process in the devices. The results show that the existence of rich silicon changes the carrier transport process in MIS devices, resulting in the reduction of the electron energy implanted in the external electric field and the reduction of the excitation efficiency of er luminescence centers. The defect state introduced by rich silicon will lead to charge capture and Auger effect, and also make the luminous center occur non-radiative recombination process.
【作者單位】： 河北大學(xué)物理科學(xué)與技術(shù)學(xué)院;
【基金】：河北省科技計(jì)劃項(xiàng)目(13214315) 河北省高校科學(xué)技術(shù)研究項(xiàng)目(QN20131115) 教育部博士點(diǎn)基金資助項(xiàng)目(20131301120003)
【分類號(hào)】：TN383.1

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