【摘要】：主要利用電致發(fā)光的實驗手段,研究了極化效應對InGaN基LED器件發(fā)光特性的影響。實驗中發(fā)現(xiàn),InGaN基LED器件的峰位隨注入電流的增加產(chǎn)生了先藍移后紅移的現(xiàn)象,藍光和綠光LED分別藍移3 nm和8 nm;而AlGaInP基紅光LED器件的峰位僅紅移。進一步研究發(fā)現(xiàn),InGaN基LED的外量子效率在注入電流為50 mA處開始劇烈下降,AlGaInP基LED的外量子效率在100 mA處才開始緩慢下降,并且兩者呈現(xiàn)不同的下降規(guī)律。通過與模擬結果對比發(fā)現(xiàn),InGaN基LED的效率在下降開始階段與俄歇復合引起的效率下降規(guī)律類似。以上實驗結果表明,InGaN基LED器件中存在極化電場,且該極化電場會對LED器件的效率衰減產(chǎn)生促進作用。
[Abstract]:The effect of polarization effect on the luminescence characteristics of InGaN based LED devices is studied by means of electroluminescence. It is found that the peak position of InGaN-based LED devices is blue shifted first and then redshift with the increase of injection current, blue and green LED shift 3 nm and 8 nm, respectively, while the peak position of AlGaInP based red light LED devices is only red-shifted. It is further found that the external quantum efficiency of InGaN-based LED begins to decrease sharply at the injection current of 50mA. The external quantum efficiency of AlGaInP-based LED decreases slowly at 100mA, and the two have different decreasing patterns. By comparing with the simulation results, it is found that the efficiency of InGaN-based LED is similar to that caused by Auger recombination at the beginning of the descent. The experimental results show that there is a polarization electric field in InGaN-based LED devices, and the polarization electric field can promote the efficiency attenuation of LED devices.
【作者單位】： 南京大學電子科學與工程學院江蘇省光電信息功能材料重點實驗室;南京大學揚州光電研究院;
【基金】：國家重點研發(fā)計劃資助項目(2016YFB0400100,2016YFB0400602,2016YFB0400402) 國家高技術研究發(fā)展計劃(863計劃)資助項目(2014AA032605,2015AA033305) 國家自然科學基金資助項目(61274003,61422401,51461135002,61334009) 江蘇省自然科學基金資助項目(BY2013077,BK20141320,BE2015111)
【分類號】：TN312.8

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