發(fā)布時間：2018-08-13 20:12

【摘要】：無論是在無線通信系統(tǒng)、衛(wèi)星導(dǎo)航系統(tǒng)，還是軍用雷達(dá)和電子對抗系統(tǒng)中，射頻功率放大器都是核心部件之一，它包含了一個系統(tǒng)的許多重要關(guān)鍵技術(shù)，占據(jù)了高達(dá)約30%的設(shè)備成本，因此對功率放大器展開研究有著重要的意義。寬帶化、高線性度和高效率是未來功率放大器研究發(fā)展的重點(diǎn)，由于CDMA系統(tǒng)采用的是變包絡(luò)數(shù)字調(diào)制技術(shù)，使得系統(tǒng)對線性度的要求更加嚴(yán)格了。 本文的課題來源于CDMA直放站對低成本、高線性功率放大器的需求，目標(biāo)是設(shè)計(jì)一款工作在865~880MHz頻段，額定輸出功率為16W（約42dBm）的線性功率放大器，線性度是本設(shè)計(jì)重點(diǎn)考量的對象。由于功率放大器同一般的小信號放大器件相比工作在大信號狀態(tài)下，因此設(shè)計(jì)難度會較大。 本文首先介紹了功率放大器的研究意義和發(fā)展現(xiàn)狀，，緊接著第二章講述了射頻功率放大器設(shè)計(jì)需要具備的基本理論基礎(chǔ)，包括常見的功率放大器分類及工作特性，功率放大器的常用技術(shù)指標(biāo)，對功率放大器穩(wěn)定性做出了分析解釋，對功率放大器的偏置電路、匹配電路做出了詳盡的理論分析和設(shè)計(jì)方法總結(jié)；第三章則根據(jù)設(shè)計(jì)要求，具體給出了功率放大器的設(shè)計(jì)流程，包括靜態(tài)工作點(diǎn)的選取及偏置電路設(shè)計(jì)，穩(wěn)定性分析，最佳負(fù)載和源阻抗?fàn)恳抡孢x取及相應(yīng)的匹配電路設(shè)計(jì)，并對設(shè)計(jì)完成的單管功率放大器進(jìn)行了小信號S參數(shù)仿真和大信號非線性特性仿真，然后由設(shè)計(jì)好的單管放大器完成雙管平衡功率放大器設(shè)計(jì)并進(jìn)行了仿真比較，最后給出了版圖設(shè)計(jì)，對單端功放和雙管平衡功放進(jìn)行比較分析設(shè)計(jì)是本文的創(chuàng)新點(diǎn)；第四章則對最終電路進(jìn)行了調(diào)試過程，測試了關(guān)鍵射頻指標(biāo)。 經(jīng)過最終測試，在865~880MHz工作頻段，當(dāng)輸出功率達(dá)到額定值42dBm時，末級增益為20.66dB，帶內(nèi)波動為0.84dB，端口駐波比都在1.3以下，三階互調(diào)值為-49.18dBc，二次諧波和三次諧波失真分別為-59.52dBc和-81.59dBc，滿足設(shè)計(jì)要求。
[Abstract]:Radio frequency power amplifier is one of the core components in wireless communication system, satellite navigation system, military radar and electronic countermeasure system. It contains many important key technologies of a system. It accounts for up to 30% of the equipment cost, so it is very important to study the power amplifier. Wideband, high linearity and high efficiency are the key points in the future research and development of power amplifiers. Because the CDMA system adopts variable envelope digital modulation technology, the requirement of linearity is more stringent. This paper comes from the demand of CDMA repeater for low cost and high linear power amplifier. The goal is to design a linear power amplifier with rated output power of 16W (about 16W) working in 865~880MHz band. Linearity is the focus of this design. Because the power amplifier works in the large signal state compared with the common small signal amplifier, it will be more difficult to design. This paper first introduces the research significance and development status of power amplifier, then the second chapter describes the basic theoretical basis of RF power amplifier design, including the common power amplifier classification and working characteristics. The common technical indexes of power amplifier are analyzed and explained, the bias circuit and matching circuit of power amplifier are analyzed in detail, and the design methods are summarized. The design flow of the power amplifier is given, including the selection of the static working point and the design of the bias circuit, the stability analysis, the simulation selection of the optimal load and source impedance, and the corresponding matching circuit design. The small signal S parameter simulation and the large signal nonlinear characteristic simulation of the designed single transistor power amplifier are carried out, and then the double tube balanced power amplifier is designed by the designed single tube amplifier and the simulation comparison is carried out. Finally, the layout design is given, and the comparative analysis and design of single end power amplifier and double tube balanced power amplifier is the innovation of this paper. Chapter 4 is the debugging process of the final circuit, and the key radio frequency index is tested. After the final test, when the output power reaches the rated 42dBm, the final gain is 20.66 dB, the in-band fluctuation is 0.84 dB, and the VSWR of the port is less than 1.3, in the 865~880MHz operating frequency band, when the output power reaches the rated 42dBm, the final stage gain is 20.66 dB, the in-band fluctuation is 0.84dB. The third order intermodulation value is -49.18 dBc, the second harmonic and the third harmonic distortion are -59.52 dBc and -81.59 dBc, respectively, which meet the design requirements.
【學(xué)位授予單位】：武漢郵電科學(xué)研究院
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN722.75

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