【摘要】：黑硅是在晶體硅表面通過(guò)特定的方法加工得到的一種新型材料,它對(duì)入射光的減反作用明顯且具有近紅外延伸效應(yīng),因而在光電探測(cè)器和太陽(yáng)能電池等領(lǐng)域具有廣闊的應(yīng)用前景。一方面,黑硅因?yàn)槠浔砻娴奈⒔Y(jié)構(gòu),可以對(duì)入射光進(jìn)行受控管理,使入射光能夠被硅材料充分吸收,降低單晶硅的反射率;另一方面,由于S、Te等氧族元素的注入,在硅的禁帶中引入了新的雜質(zhì)能級(jí),使硅的能帶結(jié)構(gòu)發(fā)生改變,使得硅對(duì)近紅外波段的光的吸收有明顯的增強(qiáng)。本文采用微機(jī)械加工(MEMS)工藝、金屬催化刻蝕工藝并結(jié)合離子注入工藝的方法,在單晶硅表面制備一層微結(jié)構(gòu)黑硅,并對(duì)制備的黑硅材料進(jìn)行反射率和吸收率等測(cè)試研究,獲得了在可見(jiàn)光和近紅外波段均有較好光譜吸收特性的黑硅微結(jié)構(gòu)材料。基于制備良好的黑硅微結(jié)構(gòu)材料,以Si-PIN光電探測(cè)器為應(yīng)用對(duì)象,將黑硅材料引入Si-PIN探測(cè)器的N層下表面,并分別按正照式和背照式兩種器件結(jié)構(gòu)進(jìn)行晶圓(wafer)級(jí)流片加工和封裝,進(jìn)行基于黑硅材料的新型Si-PIN光電探測(cè)器試制,對(duì)比測(cè)試探測(cè)器的光譜響應(yīng)范圍、響應(yīng)度、響應(yīng)時(shí)間、暗電流等主要性能參數(shù)。本文取得的主要研究結(jié)果如下:(1)采用MEMS工藝、金屬催化刻蝕工藝并結(jié)合離子注入的工藝制備得到的微結(jié)構(gòu)黑硅,在可見(jiàn)光波段和近紅外波段的反射率明顯降低,吸收率明顯增強(qiáng);(2)基于黑硅材料的正照式Si-PIN光電探測(cè)器(光敏面直徑Φ2 mm)的光譜響應(yīng)范圍為400~1100 nm,峰值響應(yīng)度達(dá)到0.71 A/W(@1000 nm,12V),1060 nm處響應(yīng)度達(dá)到0.45 A/W(@1060 nm,12V);(3)基于黑硅材料的背照式Si-PIN光電探測(cè)器(光敏面尺寸3.6mm×3.6mm)的光譜響應(yīng)范圍為400~1100 nm,峰值響應(yīng)度達(dá)到0.68 A/W(@1030 nm,12V),1060nm處響應(yīng)度達(dá)到0.48 A/W(@1060 nm,12V);(4)基于黑硅材料的正照式和背照式Si-PIN光電探測(cè)器的響應(yīng)時(shí)間≤10 ns,暗電流≤10 nA;(5)基于黑硅材料的正照式和背照式Si-PIN光電探測(cè)器在-25oC~+60oC的溫度范圍內(nèi),能正常工作。
[Abstract]:Black silicon is a new type of material fabricated on the surface of crystal silicon by special method. It has obvious anti-reaction effect to incident light and has the effect of near infrared extension. Therefore, it has a broad application prospect in the fields of photodetector and solar cell. On the one hand, because of the microstructure of its surface, black silicon can be controlled to manage the incident light, so that the incident light can be fully absorbed by the silicon material, thus reducing the reflectivity of monocrystalline silicon; on the other hand, because of the injection of oxygen group elements such as Snte, A new impurity energy level is introduced into the band gap of silicon, which makes the band structure of silicon change and the absorption of light in near infrared band obviously enhanced. In this paper, a layer of microstructured black silicon was prepared on the surface of monocrystalline silicon by micromachining (MEMS) process, metal catalytic etching process and ion implantation process. The reflectivity and absorptivity of the prepared black silicon materials were measured and studied. Black silicon microstructures with good spectral absorption properties in both visible and near infrared bands were obtained. Based on the preparation of fine black silicon microstructural materials and Si-PIN photodetectors as the application object, the black silicon materials were introduced into the N layer surface of the Si-PIN detectors, and the wafer (wafer) wafers were fabricated and encapsulated according to the normal and back-illuminated device structures, respectively. A new type of Si-PIN photodetector based on black silicon material was developed. The spectral response range, responsivity, response time, dark current and other main performance parameters of the detector were compared. The main results obtained in this paper are as follows: (1) the reflectivity of the microstructured black silicon prepared by MEMS, metal catalytic etching and ion implantation has been significantly reduced in the visible and near infrared bands. (2) the spectral response range of Si-PIN photodetector based on black silicon (Guang Min diameter 桅 2 mm) is 400,1100 nm, and the peak responsivity is 0.71 A / W (1 000 nm / 12 V) at 1060 nm (r = 0.45 Ar / W (r = 1060 nm / 12 V); (3) based on black silicon material. The spectral response range of the Si-PIN photodetector (Guang Min plane size 3.6mm 脳 3.6mm) is 400,1100 nm, and the peak responsivity is 0.68A / W (1030nm / 12V) at 1060nm. The response time is 0.48A / W (r = 1060nm / 12V); (_ 4) based on the black silicon material and the response time of the black silicon based and back-illuminated Si-PIN photodetectors. 10ns, dark current 鈮，

本文編號(hào)：2172176