AlGaN雪崩光電二極管噪聲特性測(cè)試及分析
發(fā)布時(shí)間：2018-08-07 16:06
【摘要】：在紫外應(yīng)用中,Ga N-Al Ga N體系材料具有許多其它寬禁帶材料所不具備的優(yōu)異性能,包括直接可調(diào)帶隙、滿足大功率、高溫、高頻和高速半導(dǎo)體器件的工作要求。2014年,包括中村修二(Shuji Nakamura)在內(nèi)的三位日本科學(xué)家因?yàn)樵贕a N材料生長(zhǎng)和摻雜方面的突破性研究而被授予諾貝爾物理學(xué)獎(jiǎng),更加明確了Ga N基材料在紫外發(fā)光和探測(cè)領(lǐng)域的前景。最近十幾年間Ga N-Al Ga N基雪崩光電二極管(APD)的研制獲得了長(zhǎng)足發(fā)展,國(guó)內(nèi)在這一領(lǐng)域的研究中也有很多重要貢獻(xiàn)。噪聲特性作為半導(dǎo)體光電器件質(zhì)量的重要表征,隨著器件研制的進(jìn)步,國(guó)外R.Mc Clintock,Turgut Tut等人已陸續(xù)報(bào)道了Al Ga N APD的噪聲特性和碰撞電離參數(shù)的研究。我所在研究室以許金通副研究員為主導(dǎo),開(kāi)展Ga N-Al Ga N基APD研發(fā)已有多年經(jīng)驗(yàn),器件研究結(jié)果頗多,卻一直沒(méi)有對(duì)器件噪聲特性開(kāi)展足夠的研究工作。本文圍繞Al Ga N APD的噪聲測(cè)試問(wèn)題,通過(guò)搭建、校準(zhǔn)測(cè)試平臺(tái),利用Si基器件整理雪崩光電二極管噪聲規(guī)律,實(shí)測(cè)Al Ga N器件等工作,初步完成了Al Ga N APD器件噪聲特性的測(cè)試工作。首先,自主搭建了能夠滿足高偏壓、小電流測(cè)試要求的噪聲測(cè)試系統(tǒng)。使用多層屏蔽盒、有效接地等屏蔽措施,屏蔽了工頻干擾和空間電磁場(chǎng)對(duì)測(cè)試系統(tǒng)的干擾。之后對(duì)測(cè)試系統(tǒng)進(jìn)行了校準(zhǔn),發(fā)現(xiàn)SR570型前置放大器在3 d B帶寬內(nèi)的頻率響應(yīng)并非保持水平,DL1211型前置放大器的頻響則在帶寬邊緣下降嚴(yán)重。利用電阻噪聲對(duì)兩種放大器的頻率響應(yīng)進(jìn)行了校正,從而保證了系統(tǒng)能夠準(zhǔn)確地測(cè)量待測(cè)對(duì)象的噪聲。然后使用購(gòu)買的商品Si基APD進(jìn)行噪聲測(cè)試。通過(guò)噪聲密度譜測(cè)試了解了過(guò)剩散粒噪聲密度譜的特性,擬合了Si器件的噪聲譜,在倍增因子小于300時(shí),獲得的過(guò)剩噪聲因子滿足碰撞電離系數(shù)比約0.1~0.2時(shí)的理論預(yù)期;當(dāng)倍增因子大于300后,過(guò)剩噪聲因子出現(xiàn)類似“死區(qū)效應(yīng)”所預(yù)言的行為。計(jì)算了等效噪聲功率密度譜,并與器件說(shuō)明中羅列的相關(guān)參數(shù)比較,獲得了二者吻合的結(jié)果。測(cè)試了Si APD寬帶噪聲,并計(jì)算信噪比,發(fā)現(xiàn)Si APD器件信噪比受到器件噪聲和系統(tǒng)本底噪聲的控制,信噪比最大值出現(xiàn)在器件噪聲與系統(tǒng)本底噪聲大小相當(dāng)?shù)臓顟B(tài)下。最后制作了Al Ga N APD器件,并測(cè)試了器件電流和噪聲特性。器件I-V曲線均表現(xiàn)出雪崩擊穿特性,擊穿電壓從90 V到130 V不等。噪聲密度譜測(cè)試僅觀測(cè)到低頻噪聲,并未觀測(cè)到過(guò)剩散粒噪聲。擬合低頻噪聲譜,發(fā)現(xiàn)器件噪聲譜以Hooge模型的1/f噪聲為主,并可能混合有burst噪聲,由于Hooge噪聲只在表面狀況較好時(shí)容易觀察到,因此結(jié)果顯示了器件較好的表面鈍化處理;而較大的1/f噪聲則說(shuō)明了材料質(zhì)量仍存在的問(wèn)題。利用噪聲密度譜計(jì)算的信噪比,發(fā)現(xiàn)其最大值出現(xiàn)在60 V左右的中低電壓處,遠(yuǎn)未達(dá)到雪崩電壓,倍增因子亦處在50以內(nèi)。該結(jié)果與Si APD中出現(xiàn)的情況相似,被認(rèn)為與系統(tǒng)本底噪聲的大小有關(guān)。之后測(cè)試了器件寬帶噪聲,并計(jì)算了響應(yīng)的信噪比。其結(jié)果顯示,雖然在本底噪聲相對(duì)較大時(shí)信噪比最大值在雪崩電壓附近的高倍增處出現(xiàn),但信噪比極值與反偏電壓和本底噪聲之間并無(wú)十分明顯的規(guī)律,器件信噪比更多地取決于特定工作狀態(tài)下器件自身低頻噪聲的大小。
[Abstract]:In UV applications, the Ga N-Al Ga N system materials have excellent properties that many other wide band gap materials do not possess, including direct adjustable band gaps to meet the requirements of high power, high temperature, high frequency and high-speed semiconductor devices for.2014, three Japanese scientists, including Nakamura Shuji (Shuji Nakamura), grow and grow in Ga N materials. The breakthrough research of doping has been awarded the Nobel prize in physics, which makes it more clear that the Ga N based materials are in the field of ultraviolet luminescence and detection. The development of Ga N-Al Ga N based avalanche photodiode (APD) has made considerable progress in the last decade, and there are many important contributions to the research in this field. The important characterization of the quality of semiconductor optoelectronic devices, with the progress of the development of devices, foreign R.Mc Clintock, Turgut Tut and others have reported the noise characteristics and collision ionization parameters of Al Ga N APD in succession. The research room of our institute is based on the deputy researcher of Xu Jintong, developing Ga N-Al Ga N based research and development for many years. In this paper, the noise characteristics of Al Ga N APD are not studied enough. In this paper, the noise characteristics of Al Ga N APD devices are preliminarily completed by setting up, calibrating the testing platform, using Si based devices to sort out the noise law of avalanche photodiodes and measuring the Al Ga N devices. First, the noise testing system which can meet the requirements of high bias and small current test is built independently. Using multi-layer shielding box, effective grounding and other shielding measures, the interference of power frequency and space electromagnetic field are shielded. Then the test system is calibrated, and the frequency response of SR570 preamplifier in 3 D B bandwidth is found. The frequency response of the DL1211 preamplifier has a serious decline in the bandwidth edge. The frequency response of the two amplifiers is corrected by using the resistance noise, so that the system can accurately measure the noise of the object to be measured. Then the noise test is performed using the purchased commodity Si based APD. The noise density spectrum is tested. The characteristics of the excess bulk density spectrum are solved, and the noise spectrum of the Si device is fitted. When the multiplier factor is less than 300, the excess noise factor can satisfy the theoretical expectation when the collision ionization coefficient is about 0.1~0.2. When the multiplier factor is more than 300, the excess noise factor appears similar to the "dead zone effect". The equivalent noise is calculated. The acoustic power density spectrum is compared with the related parameters in the device description. The results of the two match are obtained. The Si APD broadband noise is tested and the signal to noise ratio is calculated. It is found that the signal to noise ratio of the Si APD device is controlled by the noise of the device and the background noise of the system, and the maximum value of the signal to noise ratio is equal to the size of the background noise of the system. At last, the Al Ga N APD device was made, and the current and noise characteristics of the device were tested. The device I-V curve showed avalanche breakdown characteristics, the breakdown voltage was from 90 V to 130 V. The noise density spectrum test only observed low frequency noise, and did not observe the excess granular noise. Fitting low frequency noise spectrum, found device noise spectrum with Hooge module. The 1/f noise is the main type and may be mixed with burst noise. Because Hooge noise is easy to be observed when the surface condition is good, the result shows the better surface passivation treatment, while the larger 1/f noise shows the problem of the material quality still existing. The maximum value of the noise ratio calculated by the noise density spectrum is found to be 6 The low voltage at about 0 V is far from avalanche voltage, and the multiplication factor is also within 50. This result is similar to that in the Si APD, and is considered to be related to the size of the background noise of the system. Then the broadband noise of the device is tested and the signal to noise ratio of the response is calculated. The result shows that the signal to noise ratio is relatively large at the background noise. The maximum value appears at the high multiplier near the avalanche voltage, but there is no obvious law between the extreme value of the signal to noise ratio and the back bias voltage and the background noise. The signal to noise ratio of the device depends more on the low frequency noise of the device itself under the specific working state.
【學(xué)位授予單位】：中國(guó)科學(xué)院研究生院(上海技術(shù)物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.7
[Abstract]:In UV applications, the Ga N-Al Ga N system materials have excellent properties that many other wide band gap materials do not possess, including direct adjustable band gaps to meet the requirements of high power, high temperature, high frequency and high-speed semiconductor devices for.2014, three Japanese scientists, including Nakamura Shuji (Shuji Nakamura), grow and grow in Ga N materials. The breakthrough research of doping has been awarded the Nobel prize in physics, which makes it more clear that the Ga N based materials are in the field of ultraviolet luminescence and detection. The development of Ga N-Al Ga N based avalanche photodiode (APD) has made considerable progress in the last decade, and there are many important contributions to the research in this field. The important characterization of the quality of semiconductor optoelectronic devices, with the progress of the development of devices, foreign R.Mc Clintock, Turgut Tut and others have reported the noise characteristics and collision ionization parameters of Al Ga N APD in succession. The research room of our institute is based on the deputy researcher of Xu Jintong, developing Ga N-Al Ga N based research and development for many years. In this paper, the noise characteristics of Al Ga N APD are not studied enough. In this paper, the noise characteristics of Al Ga N APD devices are preliminarily completed by setting up, calibrating the testing platform, using Si based devices to sort out the noise law of avalanche photodiodes and measuring the Al Ga N devices. First, the noise testing system which can meet the requirements of high bias and small current test is built independently. Using multi-layer shielding box, effective grounding and other shielding measures, the interference of power frequency and space electromagnetic field are shielded. Then the test system is calibrated, and the frequency response of SR570 preamplifier in 3 D B bandwidth is found. The frequency response of the DL1211 preamplifier has a serious decline in the bandwidth edge. The frequency response of the two amplifiers is corrected by using the resistance noise, so that the system can accurately measure the noise of the object to be measured. Then the noise test is performed using the purchased commodity Si based APD. The noise density spectrum is tested. The characteristics of the excess bulk density spectrum are solved, and the noise spectrum of the Si device is fitted. When the multiplier factor is less than 300, the excess noise factor can satisfy the theoretical expectation when the collision ionization coefficient is about 0.1~0.2. When the multiplier factor is more than 300, the excess noise factor appears similar to the "dead zone effect". The equivalent noise is calculated. The acoustic power density spectrum is compared with the related parameters in the device description. The results of the two match are obtained. The Si APD broadband noise is tested and the signal to noise ratio is calculated. It is found that the signal to noise ratio of the Si APD device is controlled by the noise of the device and the background noise of the system, and the maximum value of the signal to noise ratio is equal to the size of the background noise of the system. At last, the Al Ga N APD device was made, and the current and noise characteristics of the device were tested. The device I-V curve showed avalanche breakdown characteristics, the breakdown voltage was from 90 V to 130 V. The noise density spectrum test only observed low frequency noise, and did not observe the excess granular noise. Fitting low frequency noise spectrum, found device noise spectrum with Hooge module. The 1/f noise is the main type and may be mixed with burst noise. Because Hooge noise is easy to be observed when the surface condition is good, the result shows the better surface passivation treatment, while the larger 1/f noise shows the problem of the material quality still existing. The maximum value of the noise ratio calculated by the noise density spectrum is found to be 6 The low voltage at about 0 V is far from avalanche voltage, and the multiplication factor is also within 50. This result is similar to that in the Si APD, and is considered to be related to the size of the background noise of the system. Then the broadband noise of the device is tested and the signal to noise ratio of the response is calculated. The result shows that the signal to noise ratio is relatively large at the background noise. The maximum value appears at the high multiplier near the avalanche voltage, but there is no obvious law between the extreme value of the signal to noise ratio and the back bias voltage and the background noise. The signal to noise ratio of the device depends more on the low frequency noise of the device itself under the specific working state.
【學(xué)位授予單位】：中國(guó)科學(xué)院研究生院(上海技術(shù)物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.7
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