【摘要】：本文主要圍繞毫米波AlGaN/GaN HEMT等效電路建模工作展開(kāi)相關(guān)研究。在小信號(hào)等效電路建模工作中,針對(duì)90nm柵長(zhǎng)毫米波AlGaN/GaN HEMT建立了相應(yīng)的小信號(hào)等效電路模型,再利用S參數(shù)微波測(cè)試,成功提取了器件的寄生參數(shù)與本征參數(shù)。在進(jìn)一步分析本征參數(shù)提取結(jié)果后,提出了毫米波AlGaN/GaN HEMT臺(tái)面邊緣電容的概念,并給出了具體的物理模型。為了有效地提取臺(tái)面邊緣電容參數(shù),建立了改進(jìn)的小信號(hào)等效電路模型,再通過(guò)分析本征柵電容Cgs、Cgd與柵寬變量的一元線性變化規(guī)律,成功提取得到了臺(tái)面邊緣電容參數(shù)。另外,為了證實(shí)所建立模型的正確性與提取方法的準(zhǔn)確性,利用Silvaco器件仿真工具進(jìn)行了進(jìn)一步仿真驗(yàn)證,結(jié)果顯示仿真結(jié)果與測(cè)試結(jié)果吻合良好。通過(guò)進(jìn)一步對(duì)臺(tái)面邊緣電容的分析,我們得到以下結(jié)論。第一,毫米波器件中的臺(tái)面邊緣電容在總的柵極電容中占有較大的比例,最多可達(dá)到33.2%,而這意味著臺(tái)面邊緣電容會(huì)對(duì)毫米波器件的頻率特性產(chǎn)生明顯的影響。第二,臺(tái)面邊緣電容在總的柵極電容中所占比例還會(huì)隨著柵長(zhǎng)的減小而不斷增大,在20nm超短?hào)砰L(zhǎng)器件中該比例甚至達(dá)到了71.5%左右。因此,消除臺(tái)面邊緣電容是一種可以有效地提升AlGaN/GaN HEMT毫米波器件頻率特性的方法。在小信號(hào)等效電路建模工作基礎(chǔ)上,進(jìn)一步展開(kāi)了毫米波AlGaN/GaN HEMT大信號(hào)等效電路建模工作。針對(duì)毫米波AlGaN/GaN HEMT直流特性,選擇利用Curtice立方模型對(duì)器件進(jìn)行直流I-V特性擬合,結(jié)合Matlab多元線性回歸運(yùn)算,成功擬合得到相關(guān)模型參數(shù)。將參數(shù)帶回Curtice立方模型并與測(cè)試結(jié)果對(duì)比后發(fā)現(xiàn),二者匹配良好。
[Abstract]:This paper focuses on the modeling of millimeter wave AlGaN/GaN HEMT equivalent circuit. In the modeling of small signal equivalent circuit, the corresponding small signal equivalent circuit model is established for 90nm gate millimeter wave AlGaN/GaN HEMT, and the parasitic and intrinsic parameters of the device are extracted successfully by microwave measurement of S parameters. After further analyzing the result of intrinsic parameter extraction, the concept of millimeter-wave AlGaN/GaN HEMT Mesa edge capacitance is proposed, and the physical model is given. In order to extract the parameters of the edge capacitance of the table effectively, an improved small-signal equivalent circuit model is established. By analyzing the linear variation law of the intrinsic gate capacitance Cgsn Cgd and the gate width variable, the parameters of the edge capacitance of the Mesa are extracted successfully. In addition, in order to verify the correctness of the proposed model and the accuracy of the extraction method, further simulation is carried out by using the Silvaco device simulation tool. The results show that the simulation results are in good agreement with the test results. Through the further analysis of the edge capacitance of the table, we get the following conclusions. First, the Mesa edge capacitance in millimeter wave devices accounts for a large proportion of the total gate capacitance, up to 33.2um, which means that the Mesa edge capacitance will have an obvious effect on the frequency characteristics of millimeter-wave devices. Secondly, the proportion of the edge capacitance in the total gate capacitance will increase with the decrease of gate length, and the proportion of the gate capacitance in 20nm ultra-short gate length devices can reach about 71.5%. Therefore, eliminating the edge capacitance is an effective method to improve the frequency characteristics of AlGaN/GaN HEMT millimeter wave devices. Based on the modeling of small signal equivalent circuit, the modeling of millimeter wave AlGaN/GaN HEMT large signal equivalent circuit is further developed. According to the DC characteristics of millimeter-wave AlGaN/GaN HEMT, the DC I-V characteristic of the device is fitted with the Curtice cubic model, and the parameters of the model are obtained successfully by combining the multivariate linear regression operation with Matlab. The parameters are brought back to the Curtice cubic model and compared with the test results. It is found that the two parameters match well.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN386

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