【摘要】：多核、多芯片封裝的系統(tǒng)架構(gòu)成為未來集成電路發(fā)展的一個主要趨勢，尺寸的不斷縮減導(dǎo)致芯片間互連延遲增大，損耗增加。硅基片上光互連系統(tǒng)兼具高性能和易集成的優(yōu)勢。硅基電光調(diào)制器是硅基片上光互連系統(tǒng)的一個重要組件，其性能決定著芯片或內(nèi)核之間的數(shù)據(jù)吞吐速率、噪聲和功耗等性能。本文提出一種全新的基于石墨新和微環(huán)諧振腔的硅基電光調(diào)制器，有機(jī)結(jié)合了石墨烯寬帶調(diào)制、優(yōu)異電傳輸性能以及微環(huán)諧振腔的高Q值光程放大的優(yōu)勢，可以在達(dá)到高的調(diào)制深度同時做到更高的3dB帶寬。同時，設(shè)計了直波導(dǎo)石墨烯調(diào)制器結(jié)構(gòu)，旨在驗證石墨烯的吸光特性，計算出石墨烯的吸收系數(shù)為0.01dB/um。并利用這一點，根據(jù)環(huán)形諧振腔的高Q特性，計算出石墨烯的理論調(diào)制深度與實際測量的調(diào)制深度得到很好地一致性。針對這種新型電光調(diào)制器，研究其區(qū)別于傳統(tǒng)調(diào)制器的調(diào)制原理，建立波導(dǎo)內(nèi)光場分布-材料結(jié)構(gòu)形式調(diào)制深度之間的定量化模型，分析最大調(diào)制頻率參數(shù)的材料、結(jié)構(gòu)性限制因素，實現(xiàn)石墨烯與微環(huán)諧振腔的一體式集成加工，為這種新型電光調(diào)制器的設(shè)計、制造提供理論、模型和方法基礎(chǔ)，對未來片上光互連系統(tǒng)中電光調(diào)制-波分復(fù)用器的一體化集成技術(shù)開發(fā)具有重要意義。
[Abstract]:Multi-core, multi-chip packaging system architecture has become a major trend in the future development of integrated circuits, the size of the continuous reduction of inter-chip interconnection delay increases, loss increases. The optical interconnection system on silicon substrate has the advantages of high performance and easy integration. Silicon based electro-optic modulator is an important component of on-chip optical interconnection system. Its performance determines the data throughput rate, noise and power consumption between chips and cores. In this paper, a novel silicon based electro-optic modulator based on new graphite resonator and microring resonator is proposed, which combines the advantages of graphene wide band modulation, excellent electrical transmission performance and high Q value optical path amplification of micro ring resonator. We can achieve higher modulation depth and higher 3dB bandwidth. At the same time, the structure of direct-waveguide graphene modulator is designed to verify the absorption characteristics of graphene, and the absorption coefficient of graphene is calculated to be 0.01dB / um. According to the high Q characteristic of ring resonator, the theoretical modulation depth of graphene is in good agreement with the measured modulation depth. In view of this new type of electro-optic modulator, the modulation principle different from the traditional modulator is studied, and the quantitative model between the optical field distribution and the modulation depth of the material structure in the waveguide is established, and the material with the maximum modulation frequency parameter is analyzed. Structural constraints, the integrated fabrication of graphene and microring resonators, provides a theoretical, model and methodological basis for the design and manufacture of this new type of electro-optic modulator. It is of great significance to develop the integrated technology of electro-optic modulation-wavelength division multiplexer in the future on-chip optical interconnection system.
【學(xué)位授予單位】：中北大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN761

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