【摘要】：結合雙/多曝光的193nm投影光刻是未來5~10年大規(guī)模集成電路工業(yè)化生產(chǎn)的主要方法.投影物鏡作為光刻機的核心分系統(tǒng),其光機系統(tǒng)關鍵技術的研究進展直接影響物鏡整體性能的提升.本文分析了當前集成電路裝備制造業(yè)對193nm投影物鏡的需求,闡述了曝光系統(tǒng)設計、光學元件被動支撐、位姿調節(jié)、主動變形、元件更換和系統(tǒng)數(shù)值孔徑調節(jié)等物鏡光機系統(tǒng)關鍵技術研究現(xiàn)狀,提煉了阻礙物鏡未來發(fā)展的關鍵科學技術問題.目前,193nm光刻物鏡尚需進一步闡明高階熱像差的產(chǎn)生機理和校正策略,解決多自由度位姿標定問題,形成完備的物鏡研制方法,指導高成像質量物鏡的制造.
[Abstract]:Double / multi-exposure 193nm projection lithography is the main method for industrial production of LSI in the next 5 ~ 10 years. As the core subsystem of lithography system, the research progress of the key technology of projection objective system directly affects the improvement of the overall performance of the objective lens. This paper analyzes the demand of the current IC equipment manufacturing industry for 193nm projection objective lens, and expounds the design of exposure system, passive support of optical elements, position and pose adjustment, active deformation, etc. The research status of the key technologies of the objective lens system, such as element replacement and system numerical aperture adjustment, is presented, and the key scientific and technological problems hindering the future development of the objective lens are refined. At present, it is necessary to further clarify the mechanism and correction strategy of high-order thermal aberration, to solve the problem of multi-degree-of-freedom position calibration, to form a complete objective lens development method, and to guide the manufacture of high imaging quality objective lens.
【作者單位】： 中國科學院長春光學精密機械與物理研究所應用光學國家重點實驗室超精密光學工程研究中心;中國科學院大學;
【基金】：國家自然科學基金(批準號:61504142) 國家科技重大專項基金(批準號:2009ZX02205)資助項目
【分類號】：TN305.7

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