【摘要】：雙波長(zhǎng)半導(dǎo)體激光器具有效率高、結(jié)構(gòu)緊湊等優(yōu)點(diǎn),在很多領(lǐng)域有重要的應(yīng)用。本文設(shè)計(jì)了一種基于分布布拉格反射(DBR)半導(dǎo)體激光器的雙波長(zhǎng)半導(dǎo)體激光器,這種激光器由DBR光柵、相位區(qū)、增益區(qū)、Y型波導(dǎo)幾個(gè)部分構(gòu)成,設(shè)計(jì)波長(zhǎng)為1064nm和1030nm,本文使用光束傳播算法(BPM)模擬計(jì)算了DBR光柵在不同結(jié)構(gòu)參數(shù)下的反射率特性,計(jì)算了其反射率峰值和半高寬的變化,探討了矩形光柵結(jié)構(gòu)的占空比、刻蝕深度與耦合系數(shù)的關(guān)系。最后模擬了1064nmDBR激光器的閾值特性以及光譜特性,并與實(shí)驗(yàn)結(jié)果相對(duì)比,進(jìn)一步分析了DBR反射率對(duì)器件性能的影響,參考分析結(jié)果模擬設(shè)計(jì)了雙波長(zhǎng)半導(dǎo)體激光器,分析了DBR反射率對(duì)其光譜特性與時(shí)域特性的影響。
[Abstract]:Dual-wavelength semiconductor lasers have many advantages, such as high efficiency and compact structure. A dual-wavelength semiconductor laser based on distributed Bragg reflection (DBR) semiconductor laser is designed in this paper. The laser consists of DBR grating, phase region, gain region and Y-shaped waveguide. The designed wavelengths are 1064nm and 1030nm. In this paper, the reflectivity characteristics of DBR gratings under different structural parameters are simulated and calculated by using the beam propagation algorithm (BPM). The peak reflectivity and half-maximum width of DBR gratings are calculated, and the duty cycle of the rectangular grating structures is discussed. The relationship between etching depth and coupling coefficient. Finally, the threshold and spectral characteristics of 1064nmDBR laser are simulated, and compared with the experimental results, the effect of DBR reflectivity on the device performance is further analyzed, and a dual-wavelength semiconductor laser is designed with reference to the analysis results. The influence of DBR reflectivity on its spectral and time domain characteristics is analyzed.
【學(xué)位授予單位】：長(zhǎng)春理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN248.4

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本文編號(hào)：2142557