形核物對鑄錠多晶硅晶體生長的影響
發(fā)布時間：2018-07-23 14:17
【摘要】：對硅鑄錠過程中的長晶階段進(jìn)行模擬和實驗對比分析,研究二氧化硅種晶熔化界面形狀和晶體生長界面形狀。采用光致發(fā)光儀(PL)研究硅片的雜質(zhì)和缺陷[1-2]分布,用微波光電導(dǎo)儀(μ-PCD)研究了鑄錠多晶硅錠少子壽命[3-4]的分布圖。當(dāng)形核物為SiO_2,SiO_2的尺寸為20μm,形核溫度為1 430℃時制備的硅片表面相對完美,結(jié)構(gòu)致密。
[Abstract]:The phase of long crystal in the process of silicon ingot is simulated and analyzed experimentally. The shape of melting interface and crystal growth interface of silicon dioxide are studied. The distribution of impurity and defect [1-2] in silicon wafer was studied by photoluminescence (PL), and the minority carrier lifetime (3-4) of ingot polysilicon ingot was studied by means of microwave-photoconductive instrument (渭 -PCD). When the nucleation material is SiO2SiO2, the size of SiO2 is 20 渭 m, and the nucleation temperature is 1 430 鈩，
本文編號：2139676
[Abstract]:The phase of long crystal in the process of silicon ingot is simulated and analyzed experimentally. The shape of melting interface and crystal growth interface of silicon dioxide are studied. The distribution of impurity and defect [1-2] in silicon wafer was studied by photoluminescence (PL), and the minority carrier lifetime (3-4) of ingot polysilicon ingot was studied by means of microwave-photoconductive instrument (渭 -PCD). When the nucleation material is SiO2SiO2, the size of SiO2 is 20 渭 m, and the nucleation temperature is 1 430 鈩，
本文編號：2139676
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