大功率激光器熱特性研究與熱阻儀研制
發(fā)布時間：2018-07-13 14:14
【摘要】：半導體激光器在光電子領域中意義重大,應用范圍十分廣泛其中包括激光打印機、光傳感、光通信等。半導體激光器在近年來發(fā)展越來越迅速,其工作功率也越來越大,此外,半導體激光器作為一種高效能源應用范圍也擴展到醫(yī)療、軍事等領域。半導體激光器的封裝結構是決定器件溫升與熱阻重要的因素,溫升與熱阻又直接決定了半導體器件的光轉化效率和激光器的光譜,隨著激光器的功率變大趨勢加強,散熱必將會成為一個重要的瓶頸,所以優(yōu)化封裝結構已經十分必要,對于今后半導體激光器的發(fā)展有重要意義。本文利用PN結結電壓隨溫度的變化關系,實現(xiàn)對大功率激光器巴條的熱阻測量,并且通過工程的方法儀器化熱阻測量,結合結構函數方法,能夠清晰的分辨出激光器巴條熱量傳遞路徑上的各層結構熱阻,并將測量結果與紅外熱成像結果進行比較驗證,該方法可以實現(xiàn)對大功率激光器熱阻的測量。用電學法對半導體激光器熱特性方面進行了研究,本文主要包括以下幾項工作:自主研發(fā)了大功率激光器熱阻儀,主要包括邏輯設計部分和功能電路設計與機箱設計部分。其邏輯設計部分是基于FPGA,用異步串口通信協(xié)議實現(xiàn)的,其模塊主要包括串口接收模塊、串口發(fā)送模塊、波特率發(fā)生模塊、控制模塊,最終將串行的數據轉換為并行可執(zhí)行的命令,來完成與PC機的通信,實現(xiàn)熱阻儀電路部分的電流控制與開關控制,并且實時采集被測器件的電壓與電流反饋到PC機,以實現(xiàn)實時監(jiān)測的目的;其功能電路部分的電路設計主要包括工作電流電路的設計、測試電流電路的設計、開關電路的設計、采集放大電路的設計。FPGA將PC機發(fā)送的串行數字信號轉化為數模轉換器可識別的信號,數模轉化器輸出恒定的電壓信號,通過工作電流電路和測試電流電路實現(xiàn)恒定電流輸出,用開關電路對電流進行開啟以控制被測器件的加熱時間,當被測器件溫度上升到穩(wěn)態(tài)時關斷大功率的工作電流,切換到不影響溫升的小電流,然后利用采集放大電路將采集到的電壓信號傳遞到電腦進行后期的處理;其機箱設計部分主要包括散熱設計和裝箱。基于測量光功率的方法,通過電學法測量出激光器未發(fā)光時的熱阻和其發(fā)光時的熱阻。利用熱阻原理將熱阻值轉化為溫升,通過溫升的變換計算出器件的光功率,通過光功率與總功率計算出光轉化效率。最后利用紅外法對實驗進行了驗證,通過紅外測試儀在測量熱阻的同時測量器件的溫升,并且通過大功率半導體激光器測試儀對其光轉化效率進行驗證。本文的研究成果有利于提高我國商業(yè)化半導體激光器器件熱阻測試設備的技術指標與水平,在半導體激光器的熱阻測試領域具有重要的理論意義和應用價值。
[Abstract]:Semiconductor lasers are of great significance in the field of optoelectronics. They are widely used in laser printers, optical sensing, optical communication and so on. Semiconductor lasers have been developing more and more rapidly in recent years, and their working power is also increasing. In addition, semiconductor lasers as a kind of high efficiency energy have been applied in medical, military and other fields. The packaging structure of semiconductor laser is an important factor to determine the temperature rise and thermal resistance of the device. Temperature rise and thermal resistance directly determine the optical conversion efficiency of semiconductor device and the spectrum of the laser. Heat dissipation will become an important bottleneck, so it is necessary to optimize the packaging structure, which is of great significance for the development of semiconductor lasers in the future. In this paper, the thermal resistance measurement of high power laser bar is realized by using the change of PN junction voltage with temperature, and the thermal resistance measurement is instrumented by engineering method, combined with the structural function method. The thermal resistance of each layer in the laser bar heat transfer path can be clearly identified and compared with the infrared thermal imaging results. This method can be used to measure the thermal resistance of high power laser. The thermal characteristics of semiconductor lasers are studied by electrical method. The main work of this paper is as follows: a high power laser thermal resistive instrument is developed, which includes logic design, functional circuit design and chassis design. Its logic design part is based on FPGA, which is realized by asynchronous serial communication protocol. The module mainly includes serial port receiving module, serial port sending module, baud rate generating module, control module, etc. Finally, the serial data is converted into a parallel executable command to complete the communication with the PC, to realize the current control and switch control of the circuit of the thermal resistive meter, and to collect the voltage and current of the measured device to the PC in real time. In order to realize the purpose of real-time monitoring, the circuit design of the functional circuit mainly includes the design of the working current circuit, the design of the test current circuit, the design of the switch circuit, The design of acquisition and amplification circuit. FPGA converts the serial digital signal sent by PC into a recognizable signal of digital-to-analog converter. The digital-analog converter outputs a constant voltage signal, and realizes the constant current output by working current circuit and testing current circuit. The current is turned on with the switch circuit to control the heating time of the device under test. When the temperature of the measured device rises to a steady state, the high power working current is turned off, and the current is switched off to a small current that does not affect the temperature rise. Then the collected voltage signal is transmitted to the computer for later processing by using the acquisition and amplification circuit. The design part of the chassis mainly includes the design of heat dissipation and packing. Based on the method of measuring optical power, the thermal resistance of the laser without luminescence and the thermal resistance of its luminescence are measured by electrical method. The thermal resistance is converted into temperature rise by the principle of thermal resistance, the optical power of the device is calculated by the transformation of the temperature rise, and the optical conversion efficiency is calculated by the optical power and the total power. Finally, the experiment is verified by infrared method. The temperature rise of the device is measured by the infrared tester, and the optical conversion efficiency is verified by the high-power semiconductor laser tester. The research results in this paper are helpful to improve the technical index and level of thermal resistance testing equipment for commercial semiconductor laser devices in China, and have important theoretical significance and application value in the field of thermal resistance measurement of semiconductor lasers.
【學位授予單位】：北京工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN248
本文編號：2119653
[Abstract]:Semiconductor lasers are of great significance in the field of optoelectronics. They are widely used in laser printers, optical sensing, optical communication and so on. Semiconductor lasers have been developing more and more rapidly in recent years, and their working power is also increasing. In addition, semiconductor lasers as a kind of high efficiency energy have been applied in medical, military and other fields. The packaging structure of semiconductor laser is an important factor to determine the temperature rise and thermal resistance of the device. Temperature rise and thermal resistance directly determine the optical conversion efficiency of semiconductor device and the spectrum of the laser. Heat dissipation will become an important bottleneck, so it is necessary to optimize the packaging structure, which is of great significance for the development of semiconductor lasers in the future. In this paper, the thermal resistance measurement of high power laser bar is realized by using the change of PN junction voltage with temperature, and the thermal resistance measurement is instrumented by engineering method, combined with the structural function method. The thermal resistance of each layer in the laser bar heat transfer path can be clearly identified and compared with the infrared thermal imaging results. This method can be used to measure the thermal resistance of high power laser. The thermal characteristics of semiconductor lasers are studied by electrical method. The main work of this paper is as follows: a high power laser thermal resistive instrument is developed, which includes logic design, functional circuit design and chassis design. Its logic design part is based on FPGA, which is realized by asynchronous serial communication protocol. The module mainly includes serial port receiving module, serial port sending module, baud rate generating module, control module, etc. Finally, the serial data is converted into a parallel executable command to complete the communication with the PC, to realize the current control and switch control of the circuit of the thermal resistive meter, and to collect the voltage and current of the measured device to the PC in real time. In order to realize the purpose of real-time monitoring, the circuit design of the functional circuit mainly includes the design of the working current circuit, the design of the test current circuit, the design of the switch circuit, The design of acquisition and amplification circuit. FPGA converts the serial digital signal sent by PC into a recognizable signal of digital-to-analog converter. The digital-analog converter outputs a constant voltage signal, and realizes the constant current output by working current circuit and testing current circuit. The current is turned on with the switch circuit to control the heating time of the device under test. When the temperature of the measured device rises to a steady state, the high power working current is turned off, and the current is switched off to a small current that does not affect the temperature rise. Then the collected voltage signal is transmitted to the computer for later processing by using the acquisition and amplification circuit. The design part of the chassis mainly includes the design of heat dissipation and packing. Based on the method of measuring optical power, the thermal resistance of the laser without luminescence and the thermal resistance of its luminescence are measured by electrical method. The thermal resistance is converted into temperature rise by the principle of thermal resistance, the optical power of the device is calculated by the transformation of the temperature rise, and the optical conversion efficiency is calculated by the optical power and the total power. Finally, the experiment is verified by infrared method. The temperature rise of the device is measured by the infrared tester, and the optical conversion efficiency is verified by the high-power semiconductor laser tester. The research results in this paper are helpful to improve the technical index and level of thermal resistance testing equipment for commercial semiconductor laser devices in China, and have important theoretical significance and application value in the field of thermal resistance measurement of semiconductor lasers.
【學位授予單位】：北京工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN248
【參考文獻】
相關期刊論文 前1條
1 王文;褚金雷;高欣;張晶;喬忠良;薄報學;;基于多芯片封裝的半導體激光器熱特性[J];強激光與粒子束;2014年01期
，本文編號：2119653
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