大功率激光器熱特性研究與熱阻儀研制
發(fā)布時(shí)間：2018-07-13 14:14
【摘要】：半導(dǎo)體激光器在光電子領(lǐng)域中意義重大,應(yīng)用范圍十分廣泛其中包括激光打印機(jī)、光傳感、光通信等。半導(dǎo)體激光器在近年來發(fā)展越來越迅速,其工作功率也越來越大,此外,半導(dǎo)體激光器作為一種高效能源應(yīng)用范圍也擴(kuò)展到醫(yī)療、軍事等領(lǐng)域。半導(dǎo)體激光器的封裝結(jié)構(gòu)是決定器件溫升與熱阻重要的因素,溫升與熱阻又直接決定了半導(dǎo)體器件的光轉(zhuǎn)化效率和激光器的光譜,隨著激光器的功率變大趨勢(shì)加強(qiáng),散熱必將會(huì)成為一個(gè)重要的瓶頸,所以優(yōu)化封裝結(jié)構(gòu)已經(jīng)十分必要,對(duì)于今后半導(dǎo)體激光器的發(fā)展有重要意義。本文利用PN結(jié)結(jié)電壓隨溫度的變化關(guān)系,實(shí)現(xiàn)對(duì)大功率激光器巴條的熱阻測(cè)量,并且通過工程的方法儀器化熱阻測(cè)量,結(jié)合結(jié)構(gòu)函數(shù)方法,能夠清晰的分辨出激光器巴條熱量傳遞路徑上的各層結(jié)構(gòu)熱阻,并將測(cè)量結(jié)果與紅外熱成像結(jié)果進(jìn)行比較驗(yàn)證,該方法可以實(shí)現(xiàn)對(duì)大功率激光器熱阻的測(cè)量。用電學(xué)法對(duì)半導(dǎo)體激光器熱特性方面進(jìn)行了研究,本文主要包括以下幾項(xiàng)工作:自主研發(fā)了大功率激光器熱阻儀,主要包括邏輯設(shè)計(jì)部分和功能電路設(shè)計(jì)與機(jī)箱設(shè)計(jì)部分。其邏輯設(shè)計(jì)部分是基于FPGA,用異步串口通信協(xié)議實(shí)現(xiàn)的,其模塊主要包括串口接收模塊、串口發(fā)送模塊、波特率發(fā)生模塊、控制模塊,最終將串行的數(shù)據(jù)轉(zhuǎn)換為并行可執(zhí)行的命令,來完成與PC機(jī)的通信,實(shí)現(xiàn)熱阻儀電路部分的電流控制與開關(guān)控制,并且實(shí)時(shí)采集被測(cè)器件的電壓與電流反饋到PC機(jī),以實(shí)現(xiàn)實(shí)時(shí)監(jiān)測(cè)的目的;其功能電路部分的電路設(shè)計(jì)主要包括工作電流電路的設(shè)計(jì)、測(cè)試電流電路的設(shè)計(jì)、開關(guān)電路的設(shè)計(jì)、采集放大電路的設(shè)計(jì)。FPGA將PC機(jī)發(fā)送的串行數(shù)字信號(hào)轉(zhuǎn)化為數(shù)模轉(zhuǎn)換器可識(shí)別的信號(hào),數(shù)模轉(zhuǎn)化器輸出恒定的電壓信號(hào),通過工作電流電路和測(cè)試電流電路實(shí)現(xiàn)恒定電流輸出,用開關(guān)電路對(duì)電流進(jìn)行開啟以控制被測(cè)器件的加熱時(shí)間,當(dāng)被測(cè)器件溫度上升到穩(wěn)態(tài)時(shí)關(guān)斷大功率的工作電流,切換到不影響溫升的小電流,然后利用采集放大電路將采集到的電壓信號(hào)傳遞到電腦進(jìn)行后期的處理;其機(jī)箱設(shè)計(jì)部分主要包括散熱設(shè)計(jì)和裝箱�；跍y(cè)量光功率的方法,通過電學(xué)法測(cè)量出激光器未發(fā)光時(shí)的熱阻和其發(fā)光時(shí)的熱阻。利用熱阻原理將熱阻值轉(zhuǎn)化為溫升,通過溫升的變換計(jì)算出器件的光功率,通過光功率與總功率計(jì)算出光轉(zhuǎn)化效率。最后利用紅外法對(duì)實(shí)驗(yàn)進(jìn)行了驗(yàn)證,通過紅外測(cè)試儀在測(cè)量熱阻的同時(shí)測(cè)量器件的溫升,并且通過大功率半導(dǎo)體激光器測(cè)試儀對(duì)其光轉(zhuǎn)化效率進(jìn)行驗(yàn)證。本文的研究成果有利于提高我國(guó)商業(yè)化半導(dǎo)體激光器器件熱阻測(cè)試設(shè)備的技術(shù)指標(biāo)與水平,在半導(dǎo)體激光器的熱阻測(cè)試領(lǐng)域具有重要的理論意義和應(yīng)用價(jià)值。
[Abstract]:Semiconductor lasers are of great significance in the field of optoelectronics. They are widely used in laser printers, optical sensing, optical communication and so on. Semiconductor lasers have been developing more and more rapidly in recent years, and their working power is also increasing. In addition, semiconductor lasers as a kind of high efficiency energy have been applied in medical, military and other fields. The packaging structure of semiconductor laser is an important factor to determine the temperature rise and thermal resistance of the device. Temperature rise and thermal resistance directly determine the optical conversion efficiency of semiconductor device and the spectrum of the laser. Heat dissipation will become an important bottleneck, so it is necessary to optimize the packaging structure, which is of great significance for the development of semiconductor lasers in the future. In this paper, the thermal resistance measurement of high power laser bar is realized by using the change of PN junction voltage with temperature, and the thermal resistance measurement is instrumented by engineering method, combined with the structural function method. The thermal resistance of each layer in the laser bar heat transfer path can be clearly identified and compared with the infrared thermal imaging results. This method can be used to measure the thermal resistance of high power laser. The thermal characteristics of semiconductor lasers are studied by electrical method. The main work of this paper is as follows: a high power laser thermal resistive instrument is developed, which includes logic design, functional circuit design and chassis design. Its logic design part is based on FPGA, which is realized by asynchronous serial communication protocol. The module mainly includes serial port receiving module, serial port sending module, baud rate generating module, control module, etc. Finally, the serial data is converted into a parallel executable command to complete the communication with the PC, to realize the current control and switch control of the circuit of the thermal resistive meter, and to collect the voltage and current of the measured device to the PC in real time. In order to realize the purpose of real-time monitoring, the circuit design of the functional circuit mainly includes the design of the working current circuit, the design of the test current circuit, the design of the switch circuit, The design of acquisition and amplification circuit. FPGA converts the serial digital signal sent by PC into a recognizable signal of digital-to-analog converter. The digital-analog converter outputs a constant voltage signal, and realizes the constant current output by working current circuit and testing current circuit. The current is turned on with the switch circuit to control the heating time of the device under test. When the temperature of the measured device rises to a steady state, the high power working current is turned off, and the current is switched off to a small current that does not affect the temperature rise. Then the collected voltage signal is transmitted to the computer for later processing by using the acquisition and amplification circuit. The design part of the chassis mainly includes the design of heat dissipation and packing. Based on the method of measuring optical power, the thermal resistance of the laser without luminescence and the thermal resistance of its luminescence are measured by electrical method. The thermal resistance is converted into temperature rise by the principle of thermal resistance, the optical power of the device is calculated by the transformation of the temperature rise, and the optical conversion efficiency is calculated by the optical power and the total power. Finally, the experiment is verified by infrared method. The temperature rise of the device is measured by the infrared tester, and the optical conversion efficiency is verified by the high-power semiconductor laser tester. The research results in this paper are helpful to improve the technical index and level of thermal resistance testing equipment for commercial semiconductor laser devices in China, and have important theoretical significance and application value in the field of thermal resistance measurement of semiconductor lasers.
【學(xué)位授予單位】：北京工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN248
本文編號(hào)：2119653
[Abstract]:Semiconductor lasers are of great significance in the field of optoelectronics. They are widely used in laser printers, optical sensing, optical communication and so on. Semiconductor lasers have been developing more and more rapidly in recent years, and their working power is also increasing. In addition, semiconductor lasers as a kind of high efficiency energy have been applied in medical, military and other fields. The packaging structure of semiconductor laser is an important factor to determine the temperature rise and thermal resistance of the device. Temperature rise and thermal resistance directly determine the optical conversion efficiency of semiconductor device and the spectrum of the laser. Heat dissipation will become an important bottleneck, so it is necessary to optimize the packaging structure, which is of great significance for the development of semiconductor lasers in the future. In this paper, the thermal resistance measurement of high power laser bar is realized by using the change of PN junction voltage with temperature, and the thermal resistance measurement is instrumented by engineering method, combined with the structural function method. The thermal resistance of each layer in the laser bar heat transfer path can be clearly identified and compared with the infrared thermal imaging results. This method can be used to measure the thermal resistance of high power laser. The thermal characteristics of semiconductor lasers are studied by electrical method. The main work of this paper is as follows: a high power laser thermal resistive instrument is developed, which includes logic design, functional circuit design and chassis design. Its logic design part is based on FPGA, which is realized by asynchronous serial communication protocol. The module mainly includes serial port receiving module, serial port sending module, baud rate generating module, control module, etc. Finally, the serial data is converted into a parallel executable command to complete the communication with the PC, to realize the current control and switch control of the circuit of the thermal resistive meter, and to collect the voltage and current of the measured device to the PC in real time. In order to realize the purpose of real-time monitoring, the circuit design of the functional circuit mainly includes the design of the working current circuit, the design of the test current circuit, the design of the switch circuit, The design of acquisition and amplification circuit. FPGA converts the serial digital signal sent by PC into a recognizable signal of digital-to-analog converter. The digital-analog converter outputs a constant voltage signal, and realizes the constant current output by working current circuit and testing current circuit. The current is turned on with the switch circuit to control the heating time of the device under test. When the temperature of the measured device rises to a steady state, the high power working current is turned off, and the current is switched off to a small current that does not affect the temperature rise. Then the collected voltage signal is transmitted to the computer for later processing by using the acquisition and amplification circuit. The design part of the chassis mainly includes the design of heat dissipation and packing. Based on the method of measuring optical power, the thermal resistance of the laser without luminescence and the thermal resistance of its luminescence are measured by electrical method. The thermal resistance is converted into temperature rise by the principle of thermal resistance, the optical power of the device is calculated by the transformation of the temperature rise, and the optical conversion efficiency is calculated by the optical power and the total power. Finally, the experiment is verified by infrared method. The temperature rise of the device is measured by the infrared tester, and the optical conversion efficiency is verified by the high-power semiconductor laser tester. The research results in this paper are helpful to improve the technical index and level of thermal resistance testing equipment for commercial semiconductor laser devices in China, and have important theoretical significance and application value in the field of thermal resistance measurement of semiconductor lasers.
【學(xué)位授予單位】：北京工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN248
【參考文獻(xiàn)】
相關(guān)期刊論文 前1條
1 王文;褚金雷;高欣;張晶;喬忠良;薄報(bào)學(xué);;基于多芯片封裝的半導(dǎo)體激光器熱特性[J];強(qiáng)激光與粒子束;2014年01期
，本文編號(hào)：2119653
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