本文選題：銦鎵鋅氧化物 + 薄膜晶體管　； 參考：《山東大學(xué)》2015年碩士論文

【摘要】：當(dāng)今電子信息行業(yè)的發(fā)展迅速,而電子元器件產(chǎn)業(yè)是基礎(chǔ),因此發(fā)展也異常的快。而薄膜晶體管(TFT)因?yàn)樵陲@示器方面的關(guān)鍵作用,它的研發(fā)歷來都是實(shí)驗(yàn)室和企業(yè)的研究重點(diǎn)。然而隨著社會的發(fā)展,傳統(tǒng)的半導(dǎo)體器件無法適應(yīng)新的要求,例如形狀可延展、可彎曲、透明等,在此情況下柔性半導(dǎo)體器件越來越受到人們的重視。柔性半導(dǎo)體器件方面,襯底選擇是關(guān)鍵,本論文經(jīng)過綜合文獻(xiàn)調(diào)研,從幾種最常見也是被應(yīng)用最多的柔性襯底材料之中,選擇聚酰亞胺(PI)膠帶作為柔性襯底,并且粘附在表面有一層300 nm二氧化硅的硅片(SiO2/Si)襯底上,后面簡稱硅片襯底。從TFT的結(jié)構(gòu)設(shè)計(jì)出發(fā),綜合考慮了器件的性能與測試的穩(wěn)定性,本論文選擇了底柵頂接觸結(jié)構(gòu)。至于TFT最為關(guān)鍵的有源層,本論文選擇了非晶銦鎵鋅氧化物(a-IGZO),主要原因是因?yàn)槠渚邆涓哌w移率、高穩(wěn)定性、透光率高、低溫下易制備等特點(diǎn)�？紤]了樣品需要折疊彎曲的性能,絕緣層選擇旋涂有機(jī)PI溶液制成薄膜來代替?zhèn)鹘y(tǒng)器件中易于斷裂的SiO2、Si3N4等材料。制備柔性a-IGZO TFT的過程中,通過改變柵極金屬材料,還有在絕緣層PI與有源層a-IGZO之間增加緩沖層,逐漸制作出了有一定特性的TFT器件。然后通過對器件進(jìn)行不同溫度退火并測試ID-VD與ID-VG曲線,選取了最佳的退火溫度為200℃。確定退火溫度后,在同一濺射環(huán)境下通過調(diào)整了IGZO薄膜的厚度來改變器件的性能,發(fā)現(xiàn)90 W、3min、純Ar(流量為20 sccm)情況下,器件性能測試出最佳性能。為了提高器件的優(yōu)異的特性,再次通過改進(jìn)緩沖層得到了最優(yōu)異的器件,使其遷移率達(dá)到3.49 cm2/Vs,亞閾值擺幅為3.45 V/decade,電流開關(guān)比為3.5E+6 A。PI膠帶本身膠粘性比較高,后面經(jīng)過制作工藝過程中高真空使其非常難以剝離,因此本論文選擇在硅片襯底上旋涂一層聚甲基丙烯酸甲酯(PMMA)溶液,然后粘附膠帶。由于PMMA中不可避免混有雜質(zhì),所以在后面的加溫過程中會引起PI膠帶的起伏而導(dǎo)致器件變差,但可以成功剝離,剝離后遷移率為0.30cm2/Vs,亞閾值擺幅為4.65 V/decade,電流開關(guān)比為4.6 E+5 A。新的器件選擇在硅片上旋涂PMMA溶液形成薄膜,旋涂PI溶液形成薄膜作為柔性襯底,然后在表面制作TFT器件。完成后泡入丙酮溶液使PMMA溶解,以PI為襯底的器件漂浮在丙酮溶液里。經(jīng)過嘗試并且成功制作幾個(gè)微米量級的超薄柔性器件,使其可以粘附在任何柔性材料上工作,漂浮前后性能基本不變,表明這種方式制作柔性器件是成功的。
[Abstract]:Nowadays, the electronic information industry is developing rapidly, and the electronic components industry is the foundation, so the development is very fast. The thin film transistor (TFT) has always been the focus of laboratory and enterprise research because of its key role in display. However, with the development of society, traditional semiconductor devices can not adapt to new requirements, such as extensible shape, bending, transparency and so on. In this case, flexible semiconductor devices have attracted more and more attention. Substrate selection is the key to flexible semiconductor devices. In this paper, polyimide (Pi) tape is selected as flexible substrate from several most common and widely used flexible substrate materials. And there is a 300 nm silicon dioxide wafer (Sio _ 2 / Si) on the surface, which is referred to as the silicon wafer substrate. Starting from the structure design of TFT and considering the performance and stability of the device, the bottom gate top contact structure is selected in this paper. As for the most important active layer of TFT, amorphous indium gallium zinc oxide (a-IGZO) is chosen because of its high mobility, high stability, high transmittance and easy preparation at low temperature. Considering the properties of the samples which need to be folded and bent, the insulator chooses the spin coated organic Pi solution to make thin films to replace the materials such as Sio _ 2 and Si _ 3N _ 4, which are easy to fracture in traditional devices. In the process of preparing flexible a-IGZO TFT, by changing gate metal material and adding buffer layer between Pi and a-IGZO, a TFT device with certain characteristics has been fabricated. Then, by annealing the device at different temperatures and measuring the ID-VD and ID-VG curves, the optimum annealing temperature is 200 鈩，

本文編號：2118205