本文選題：光子集成 + 波導(dǎo)��； 參考：《南京郵電大學(xué)》2017年碩士論文

【摘要】：在現(xiàn)代光通信領(lǐng)域,基于空間傳輸?shù)目梢姽馔ㄐ偶夹g(shù)發(fā)展迅猛,已經(jīng)開始改變?nèi)藗兊纳盍?xí)慣,而面向可見光通信的平面光子集成器件憑借其尺寸小、功耗低、高穩(wěn)定性和高響應(yīng)速度等優(yōu)點(diǎn),成為了業(yè)界研究人員的關(guān)注熱點(diǎn),具有巨大的價值和廣闊的應(yīng)用前景。III-V族的氮化物作為第三代半導(dǎo)體材料,在可見光波長范圍內(nèi)具有優(yōu)良的光電特性,適用于制備各種光源器件及有源光子集成器件,為制備面向可見光平面通信的集成光子器件奠定了良好的材料基礎(chǔ)。雙工通信是應(yīng)用于可見光平面通信的集成光子器件中最基本的功能模塊,將光源,波導(dǎo),探測器集成在同一塊晶片上,實(shí)現(xiàn)雙工通信。研究片上雙工通信,是研制面向可見光平面通信集成光子器件的重要前提和基礎(chǔ)。本文基于氮化鎵多量子阱材料,對懸空氮化鎵光波導(dǎo)、平面集成光子通信器件進(jìn)行了設(shè)計(jì)制備,理論模擬,主要研究了一種面向可見光通信的平面光子集成器件,并進(jìn)行了電學(xué)、光學(xué)、系統(tǒng)測試分析等多方面工作。主要工作包括:采用時域有限差分(FDTD)方法以及有限元方法(FEM),分別借助于RSoft軟件中的Fullwave模塊和FemSIM模塊,對工作在可見光波段的懸空氮化鎵矩形波導(dǎo)進(jìn)行了傳輸特性理論分析和模式分析。提出并設(shè)計(jì)了基于氮化鎵材料的平面光子集成器件,采用氮化物ICP刻蝕技術(shù)、深硅刻蝕技術(shù)以及背后減薄等技術(shù),在2英寸的硅襯底GaN/In GaN晶片上制備了集成器件,實(shí)現(xiàn)了光源,波導(dǎo)和探測器的單片集成。并利用掃描電子顯微鏡(SEM)、原子力顯微鏡(AFM)和光學(xué)電子顯微鏡對器件進(jìn)行了結(jié)構(gòu)測試和形貌分析。針對氮化鎵平面光子集成器件,設(shè)計(jì)了一套綜合的光學(xué)及電學(xué)測試系統(tǒng)用于測試其性能,主要采用半導(dǎo)體參數(shù)儀系統(tǒng)分析了LED的電學(xué)性能,并且驗(yàn)證了懸空In GaN/GaN量子阱器件的光電探測功能。另外,采用數(shù)字示波器分析了集成器件的雙工通信性能,并且驗(yàn)證了器件抗同頻干擾的能力,為實(shí)現(xiàn)具有復(fù)雜功能的單片光子集成器件奠定了基礎(chǔ)。
[Abstract]:In the field of modern optical communication, the visible light communication technology based on space transmission has developed rapidly, and has begun to change people's living habits. The planar photonic integrated devices for visible light communication have small size and low power consumption. The advantages of high stability and high response speed have become the focus of attention of researchers in the industry, and have great value and broad application prospects. The nitride of the III-V family is used as the third generation semiconductor material. It has excellent optoelectronic properties in the range of visible wavelength, and is suitable for the fabrication of various light source devices and active photonic integrated devices, which lays a good material foundation for the fabrication of integrated photonic devices for visible light plane communication. Duplex communication is the most basic function module of integrated photonic devices used in visible light plane communication. The light source, waveguide and detector are integrated on the same chip to realize duplex communication. The study of on-chip duplex communication is an important prerequisite and foundation for the development of optical planar communication integrated photonic devices. In this paper, based on gallium nitride multiple quantum well materials, the suspended gallium nitride optical waveguide and planar integrated photonic communication devices are designed and fabricated. A planar photonic integrated device for visible light communication is studied. And carried out electrical, optical, system testing and analysis and other aspects of work. The main work includes: using finite difference time domain (FDTD) method and finite element method (FEM), using Fullwave module and FemSIM module in RSoft software, respectively. The propagation characteristics and mode analysis of suspended gallium nitride rectangular waveguide operating in visible light band are analyzed theoretically and in mode. A planar photonic integrated device based on gallium nitride is proposed and designed. The integrated device is fabricated on 2 inch Si substrate gan / in gan wafer using ICP etching technology, deep silicon etching technology and back thinning technology, and the light source is realized. Monolithic integration of waveguide and detector. Scanning electron microscope (SEM), atomic force microscope (AFM) and optical electron microscope (OEM) were used to analyze the structure and morphology of the device. A comprehensive optical and electrical testing system is designed to test the performance of gallium nitride planar photonic integrated devices. The semiconductor parameter meter is used to analyze the electrical properties of LED. The photoelectric detection function of suspended in gan / gan quantum well devices is verified. In addition, the digital oscilloscope is used to analyze the duplex communication performance of the integrated devices, and the ability of the devices to resist co-frequency interference is verified, which lays a foundation for the realization of monolithic photonic integrated devices with complex functions.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN252;TN929.1

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