本文選題：高純硅 + 金屬雜質(zhì)　； 參考：《質(zhì)譜學(xué)報》2016年01期

【摘要】：高純硅廣泛應(yīng)用于光伏產(chǎn)業(yè)與電子信息產(chǎn)業(yè),其中雜質(zhì)的種類與含量是影響其性能的重要指標(biāo)。根據(jù)雜質(zhì)的不同屬性,對高純硅中雜質(zhì)的質(zhì)譜及非質(zhì)譜分析測定方法進行了分類與綜述,分析了各種方法的優(yōu)缺點及應(yīng)用現(xiàn)狀。金屬雜質(zhì)元素的測定方法主要有輝光放電質(zhì)譜法(GDMS)、電感耦合等離子體質(zhì)譜法(ICP-MS)、二次離子質(zhì)譜法(SIMS)等質(zhì)譜分析方法,以及原子光譜法、中子活化分析法等非質(zhì)譜分析方法;非金屬雜質(zhì)元素的測定方法主要有二次離子質(zhì)譜法、氣體提取-專用測定法等非質(zhì)譜分析方法。對于高純硅純度分析,質(zhì)譜和非質(zhì)譜分析方法分別在金屬雜質(zhì)元素和非金屬雜質(zhì)元素的測定方面顯示出優(yōu)勢。
[Abstract]:High purity silicon is widely used in photovoltaic industry and electronic information industry. According to the different properties of impurities, the mass spectrometry and non-mass spectrometry analysis methods of impurities in high-purity silicon are classified and summarized. The advantages and disadvantages of these methods and their application status are analyzed. The main methods for the determination of metal impurity elements are glow discharge mass spectrometry (GDMS), inductively coupled plasma mass spectrometry (ICP-MS), secondary ion mass spectrometry (Sims), and non-mass spectrometry, such as atomic spectroscopy and neutron activation analysis. The determination methods of nonmetallic impurity elements mainly include secondary ion mass spectrometry, gas extraction-specific determination and other non-mass spectrometry analysis methods. For the purity analysis of high purity silicon, mass spectrometry and non-mass spectrometry methods show advantages in the determination of metal impurity elements and nonmetallic impurity elements, respectively.
【作者單位】： 中國原子能科學(xué)研究院;中國計量科學(xué)研究院;華潤(集團)有限公司;
【基金】：國家科技支撐計劃課題:無機純物質(zhì)純度溯源研究與基標(biāo)準(zhǔn)研制(2013BAK12B02)資助
【分類號】：TN304.12;O657.63

【參考文獻】

相關(guān)期刊論文 前1條

1 李金英;魯盛會;石磊;趙志軍;伍濤;;毛細管電泳-電感耦合等離子體質(zhì)譜聯(lián)用技術(shù)及其元素形態(tài)分析的新進展[J];質(zhì)譜學(xué)報;2012年04期

【共引文獻】

相關(guān)期刊論文 前6條

1 張歡歡;陳繼m，

本文編號：2071018