本文選題：硅基光電子集成 + 微環(huán)諧振器�。� 參考：《電子科技大學(xué)》2017年碩士論文

【摘要】：電光調(diào)制器是光纖通信系統(tǒng)中的核心元件,具有速率高、寬帶寬、尺寸小和易集成等特性的電光調(diào)制器是研究重點(diǎn)。傳統(tǒng)的電光調(diào)制器主要是利用LiNbO3或III-V族材料的電致折射率效應(yīng)實(shí)現(xiàn)高速的電光調(diào)制,但面臨著尺寸大、集成度低、制作成本高等問題。硅基光調(diào)制器利用廉價的硅材料和成熟的硅基工藝,具有光電子與微電子混合集成的潛力,對于實(shí)現(xiàn)高速率、寬帶寬和尺寸小、可集成的電光調(diào)制尤為重要。本論文以基于微環(huán)諧振結(jié)構(gòu)的硅基電光調(diào)制器作為研究對象,重點(diǎn)研究了內(nèi)嵌式石墨烯-硅基微環(huán)電光調(diào)制原理、結(jié)構(gòu)設(shè)計和器件仿真,主要內(nèi)容為以下幾方面:1、研究了硅基光波導(dǎo)的耦合模方程,得到了硅基微環(huán)諧振結(jié)構(gòu)的理論模型,分析了微環(huán)參數(shù),包括微環(huán)半徑、耦合波導(dǎo)間距、微環(huán)損耗對于微環(huán)諧振器的影響,并分析了石墨烯-硅基微環(huán)電光調(diào)制的工作原理,為石墨烯-硅基微環(huán)電光調(diào)制器設(shè)計提供參考;2、設(shè)計了內(nèi)嵌式雙層石墨烯-硅基波導(dǎo)結(jié)構(gòu),利用有限元分析法,建立了石墨烯-硅基波導(dǎo)的有效折射率隨電壓變化的關(guān)聯(lián)關(guān)系,得到石墨烯-硅基電光調(diào)制器的TE和TM模電光調(diào)制特性。利用該波導(dǎo)設(shè)計了一種石墨烯-硅基微環(huán)電光調(diào)制器,通過優(yōu)化內(nèi)嵌石墨烯在波導(dǎo)中的位置、隔離層厚度、隔離層材料和波導(dǎo)尺寸、環(huán)波導(dǎo)與直波導(dǎo)間距,得到了速率高、寬帶寬和小尺寸的石墨烯-硅基微環(huán)電光調(diào)制器;3、為了進(jìn)一步增強(qiáng)石墨烯與光波的相互作用,提出了內(nèi)嵌多層石墨烯的硅基波導(dǎo)結(jié)構(gòu),對比不同層參數(shù),發(fā)現(xiàn)四層石墨烯硅基波導(dǎo)最優(yōu),結(jié)果表明,內(nèi)嵌式四層石墨烯-硅基微環(huán)調(diào)制器的TE模調(diào)制消光比可達(dá)32.1dB、驅(qū)動電壓為6.22V、每比特能耗為6.8fJ,TM模調(diào)制消光比可達(dá)37.4dB、驅(qū)動電壓為2.2V、每比特能耗為0.92fJ,調(diào)制帶寬為140GHz;為了消除對TE模和TM調(diào)制效果的不同,通過在波導(dǎo)中同時引入水平和垂直的石墨烯層,提出了一種四層石墨烯-硅基微環(huán)偏振無關(guān)電光調(diào)制器。4、對論文工作進(jìn)行總結(jié),并對石墨烯-硅基微環(huán)電光調(diào)制器的前景進(jìn)行了展望。
[Abstract]:Electro-optic modulator is the core component in optical fiber communication system. The electro-optic modulator with high speed, wide bandwidth, small size and easy integration is the focus of research. The traditional electro-optic modulator mainly uses the electro-refractive index effect of Linbo _ 3 or III-V group materials to realize high-speed electro-optic modulation, but it is faced with the problems of large size, low integration and high production cost. Silicon based optical modulator has the potential of optoelectronic and microelectronic mixing integration using cheap silicon material and mature silicon based process. It is particularly important for realizing high speed wide bandwidth and small size integrated electro-optic modulation. In this paper, we focus on the principle, structure design and device simulation of embedded graphene based microring electro-optic modulator based on microring resonant structure. The main contents are as follows: 1. The coupling mode equation of silicon-based optical waveguide is studied, the theoretical model of the resonant structure of silicon based microring is obtained, and the parameters of microloop, including the radius of microring, the spacing of coupling waveguide, are analyzed. The effect of microring loss on the microring resonator is analyzed. The working principle of graphene silicon-based microring electro-optic modulation is analyzed. It provides a reference for the design of graphene silicon-based microring electro-optic modulator and designs the embedded double-layer graphene silicon-based waveguide structure. By using finite element analysis, the correlation of effective refractive index with voltage of graphene silicon-based waveguide is established, and the te and TM mode electro-optic modulation characteristics of graphene silicon-based electro-optic modulator are obtained. A graphene silicon-based microring electro-optic modulator is designed. By optimizing the position of the embedded graphene in the waveguide, the thickness of the isolation layer, the material and the size of the isolator, and the distance between the ring waveguide and the straight waveguide, a high rate is obtained. In order to further enhance the interaction between graphene and light wave, a wide and small size graphene / silicon-based microring electro-optic modulator is proposed. The silicon-based waveguide structure with embedded multilayer graphene is proposed, and the parameters of different layers are compared. It is found that the four-layer graphene silicon-based waveguide is optimal. The te mode modulation extinction ratio of embedded four-layer graphene silicon-based microring modulator can reach 32.1dB, the driving voltage is 6.22V, the power consumption per bit is 6.8fJ / TM mode modulation extinction ratio can reach 37.4 dB, the driving voltage is 2.2 V, the energy consumption per bit is 0.92fJand the modulation bandwidth is 140GHz. Eliminates differences in te mode and TM modulation effects, By introducing both horizontal and vertical graphene layers into the waveguide, a four-layer graphene silicon-based micro-ring polarization-independent electro-optic modulator. The prospect of graphene-silicon-based micro-ring electro-optic modulator is also prospected.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN761

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本文編號：2069907