1700V RC-IGBT的設(shè)計(jì)與仿真分析
發(fā)布時(shí)間：2018-06-26 02:04
本文選題：絕緣柵雙極晶體管 + 逆向?qū)?/strong>�。� 參考：《電子科技大學(xué)》2017年碩士論文
【摘要】：IGBT是當(dāng)前最主流的功率器件之一。為了降低制造和封裝成本,人們提出了將IGBT和與其反并聯(lián)的續(xù)流二極管集成在一起,成為逆導(dǎo)型IGBT(RC-IGBT)。RC-IGBT最大的特點(diǎn)是同時(shí)具有正向和反向?qū)芰?而同時(shí)帶來最大問題是在正向?qū)〞r(shí)會出現(xiàn)Snapback現(xiàn)象。如何抑制乃至消除Snapback現(xiàn)象是RC-IGBT研究的熱點(diǎn)之一。本文對RC-IGBT的Snapback現(xiàn)象進(jìn)行了研究,初步尋找了解決該現(xiàn)象的方法,并在此基礎(chǔ)上提出了一種新型RC-IGBT的結(jié)構(gòu),并對其優(yōu)缺點(diǎn)進(jìn)行了仿真分析。本文內(nèi)容主要由以下幾部分構(gòu)成:1.簡要介紹了IGBT以及RC-IGBT的發(fā)展歷史,RC-IGBT的優(yōu)缺點(diǎn)以及設(shè)計(jì)上需要解決的問題,以及RC-IGBT中集成的P-i-N功率二極管的基本特性。2.分析了傳統(tǒng)RC-IGBT的三種工作狀態(tài),以及在正向?qū)ㄟ^程中Snapback現(xiàn)象出現(xiàn)的原理,并通過仿真分析得出減小元胞部分N-anode長度是最簡單有效抑制Snapback現(xiàn)象的方法,但同時(shí)會使器件的反向?qū)ㄌ匦宰儾畹慕Y(jié)論。隨后又解釋了RC-IGBT的耐壓要高于相同參數(shù)下常規(guī)IGBT的原因。3.提出了一種新型RC-IGBT結(jié)構(gòu),其主要思想是利用反向?qū)〞r(shí)原本不通過電流的結(jié)終端部分的面積,將陽極區(qū)域的P-anode替換為N-anode,使得結(jié)終端部分也具有了反向?qū)ǖ哪芰�。新型RC-IGBT相比于傳統(tǒng)RC-IGBT,其正向和反向?qū)ㄌ匦缘恼壑嘘P(guān)系更為優(yōu)化,而且并不需要額外的工藝步驟。4.指出了新型RC-IGBT存在的缺點(diǎn),即它的電流會在靠近結(jié)終端的邊緣元胞陰極區(qū)域過于集中,易導(dǎo)致寄生晶閘管的開啟,使得器件在從反向?qū)顟B(tài)向正向阻斷狀態(tài)切換的反向恢復(fù)發(fā)生失效。減小器件結(jié)終端部分N-anode長度可以使器件在更大電流下才會發(fā)生反向恢復(fù)失效并且?guī)淼呢?fù)面影響較小,是比較好的解決反向恢復(fù)失效問題的途徑。
[Abstract]:IGBT is one of the most popular power devices. In order to reduce the cost of manufacturing and packaging, it is proposed to integrate IGBT with its reverse parallel current diode, which is the most important feature of inverse conduction IGBT (RC-IGBT). RC-IGBT has both forward and reverse conduction capability. At the same time, the biggest problem is the Snapback phenomenon in forward conduction. How to suppress and eliminate Snapback phenomenon is one of the hotspots in RC-IGBT research. In this paper, the Snapback phenomenon of RC-IGBT is studied, the method to solve this phenomenon is found, and a new structure of RC-IGBT is proposed, and its advantages and disadvantages are analyzed by simulation. This article mainly consists of the following parts: 1. This paper briefly introduces the development history of IGBT and RC-IGBT, the advantages and disadvantages of RC-IGBT and the problems to be solved in design, and the basic characteristics of P-i-N power diode integrated in RC-IGBT. In this paper, three working states of traditional RC-IGBT and the principle of Snapback phenomenon in forward conduction are analyzed. Through simulation analysis, it is concluded that reducing the N-Node length is the simplest and effective method to suppress Snapback phenomenon. But at the same time, it will make the reverse conduction characteristic of the device worse. The reason why RC-IGBT has higher voltage resistance than conventional IGBT with the same parameters is explained. In this paper, a new RC-IGBT structure is proposed. The main idea is to replace the P-Node in the anode region with N-anodeby the area of the junction terminal which was not passing through the current in reverse conduction, so that the junction terminal also has the ability of reverse conduction. Compared with the traditional RC-IGBT, the new RC-IGBT has a more optimized trade-off between forward and reverse conduction characteristics, and does not require additional process steps. 4. The shortcomings of the new RC-IGBT are pointed out, that is, the current of RC-IGBT will be too concentrated in the cathode area of the edge cell near the junction terminal, which will easily lead to the opening of parasitic thyristor. The reverse recovery of the device switching from the reverse on state to the forward blocking state is invalidated. Reducing the N-Node length of the junction can make the reverse recovery failure occur at higher current and bring less negative effect. It is a better way to solve the reverse recovery failure problem.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8
【參考文獻(xiàn)】
相關(guān)期刊論文 前3條
1 亢寶位;;中國IGBT制造業(yè)發(fā)展、現(xiàn)狀與問題的思考[J];智能電網(wǎng);2013年01期
2 張文亮;田曉麗;談景飛;朱陽軍;;The snap-back effect of an RC-IGBT and its simulations[J];Journal of Semiconductors;2013年07期
3 張文亮;田曉麗;談景飛;朱陽軍;;逆導(dǎo)型IGBT發(fā)展概述[J];半導(dǎo)體技術(shù);2012年11期
相關(guān)博士學(xué)位論文 前2條
1 陳偉中;RC-IGBT的理論模型與新結(jié)構(gòu)研究[D];電子科技大學(xué);2014年
2 朱利恒;新型RC-IGBT的研究[D];電子科技大學(xué);2014年
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