本文選題：多芯片組件 + 失效物理��； 參考：《電子科技大學(xué)》2017年碩士論文

【摘要】：多芯片組件封裝技術(shù)在電子工業(yè)中受到很廣泛的關(guān)注,它是一種能夠?qū)崿F(xiàn)電子系統(tǒng)高效運(yùn)轉(zhuǎn)和電子整機(jī)小型化的有效途徑,能夠發(fā)揮半導(dǎo)體器件集成電路的優(yōu)良性能,但是其復(fù)雜的結(jié)構(gòu)與不同的服役環(huán)境使多芯片組件的可靠性分析具有自己的特殊性,因此其研究方法和手段對保證多芯片組件產(chǎn)品在全壽命周期內(nèi)的質(zhì)量具有重要意義。在正常工作狀態(tài)下,多芯片組件在全壽命周期內(nèi)執(zhí)行的任務(wù)不同,其承受的環(huán)境載荷與應(yīng)力也不盡相同。本文結(jié)合相關(guān)項(xiàng)目經(jīng)驗(yàn),將從多芯片組件物理失效的角度出發(fā),考慮多芯片組件的實(shí)際設(shè)計(jì)與環(huán)境負(fù)載條件,對其進(jìn)行可靠性分析,并開展基于失效物理的多芯片組件的壽命預(yù)測與可靠性分析方法的研究。主要內(nèi)容如下:首先,考慮到多芯片組件封裝形式的特點(diǎn),根據(jù)多芯片組件的不同方面,從物理和化學(xué)角度詳細(xì)介紹多芯片組件中各個(gè)模塊可靠性對整體可靠性的影響,并揭示其失效機(jī)理與失效模式特點(diǎn)。在此基礎(chǔ)上,研究多芯片組件全壽命周期內(nèi)在不同任務(wù)剖面和不同應(yīng)力剖面下的失效機(jī)制,并且考慮影響多芯片組件固有可靠性的設(shè)計(jì)、材料、工藝等內(nèi)在因素,建立基于失效物理的可靠性技術(shù)框架來解決多芯片組件的壽命預(yù)測問題,并結(jié)合有限元分析模擬多芯片組件實(shí)際工作條件,完成多芯片組件在熱循環(huán)下的有限元分析。針對多芯片組件焊點(diǎn)失效這一典型失效模式,分析其壽命預(yù)測模型,并用有限元分析的方法對其進(jìn)行在熱循環(huán)載荷下的壽命預(yù)測。其次,針對多芯片組件多種失效模式共存的問題,根據(jù)國內(nèi)外多芯片組件失效模式的研究現(xiàn)狀,對多芯片組件的過應(yīng)力失效和損耗失效進(jìn)行競爭失效分析研究,運(yùn)用馬里蘭大學(xué)多芯片組件可靠性試驗(yàn)相關(guān)數(shù)據(jù),揭示多芯片組件失效本質(zhì)與過程。考慮到失效模式間的相關(guān)性,通過建立多元對數(shù)正態(tài)分布函數(shù)的聯(lián)合分布模型進(jìn)行相關(guān)性假設(shè)檢驗(yàn),運(yùn)用相關(guān)性系數(shù)來描述失效模式間的相關(guān)關(guān)系。最后,在失效物理分析的基礎(chǔ)上,對多芯片組件加速壽命試驗(yàn)進(jìn)行了初步探索。分析三種加速壽命方法的優(yōu)劣性,結(jié)合多芯片組件實(shí)際工況及可靠性特點(diǎn),建立一種改進(jìn)后的加速壽命試驗(yàn)。并確定加速壽命試驗(yàn)選擇的應(yīng)力以及其施加方式。最后對改進(jìn)的試驗(yàn)方案進(jìn)行可靠性統(tǒng)計(jì)分析。
[Abstract]:Multi-chip module packaging technology has been widely concerned in the electronic industry. It is an effective way to realize the efficient operation of electronic system and the miniaturization of electronic whole machine, and it can give play to the excellent performance of semiconductor device integrated circuit. However, its complex structure and different service environment make the reliability analysis of multi-chip modules have its own particularity, so its research methods and means are of great significance to ensure the quality of multi-chip modules in the whole life cycle. Under the normal working condition, the multi-chip modules perform different tasks in the whole life cycle, and the environmental loads and stresses are also different. Based on the experience of related projects, this paper analyzes the reliability of multi-chip modules from the point of view of physical failure of multi-chip modules, considering the actual design and environmental load conditions of multi-chip modules. The methods of life prediction and reliability analysis of multi-chip components based on failure physics are also studied. The main contents are as follows: first of all, considering the characteristics of multi-chip module packaging, according to the different aspects of multi-chip module, the physical and chemical aspects of the impact of the reliability of each module on the overall reliability of the multi-chip module are introduced in detail. The failure mechanism and the characteristics of failure mode are revealed. On this basis, the failure mechanism of multi-chip modules under different mission profiles and different stress profiles during their life cycle is studied, and the inherent factors affecting the inherent reliability of multi-chip modules, such as design, material and process, are considered. The reliability technology framework based on failure physics is established to solve the life prediction problem of multi-chip modules. The finite element analysis of multi-chip modules under thermal cycling is completed by simulating the actual working conditions of multi-chip modules with finite element analysis. Aiming at the typical failure mode of solder joint of multi-chip module, the life prediction model is analyzed, and its life under thermal cycling load is predicted by finite element method. Secondly, aiming at the coexistence of multiple failure modes of multi-chip modules, according to the current research situation of multi-chip modules at home and abroad, the competitive failure analysis of multi-chip modules is carried out. Based on the reliability test data of multi-chip modules at the University of Maryland, the failure nature and process of multi-chip modules are revealed. Considering the correlation between failure modes, a joint distribution model of multivariate logarithmic normal distribution function is established to test the correlation hypothesis, and the correlation coefficient is used to describe the correlation relationship between failure modes. Finally, on the basis of failure physical analysis, the accelerated life test of multi-chip modules is preliminarily explored. The advantages and disadvantages of the three accelerated life methods are analyzed and an improved accelerated life test is established according to the actual working conditions and reliability characteristics of multi-chip modules. The stress selected by accelerated life test and its application mode are determined. Finally, the reliability of the improved test scheme is analyzed statistically.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN405

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 駱明珠;康銳;劉法旺;;電子產(chǎn)品可靠性預(yù)計(jì)方法綜述[J];電子科學(xué)技術(shù);2014年02期

2 張鹿皓;謝勁松;;基于失效物理方法的焊點(diǎn)疲勞壽命評價(jià)流程設(shè)計(jì)[J];電子質(zhì)量;2014年08期

3 駱明珠;康銳;;基于故障物理的慣導(dǎo)電路可靠性預(yù)計(jì)新方法[J];中國慣性技術(shù)學(xué)報(bào);2013年06期

4 王艷芝;賈穎;;多芯片組件(MCM)可靠性技術(shù)探討[J];電子產(chǎn)品可靠性與環(huán)境試驗(yàn);2009年S1期

5 安若銘;高樺;;電子產(chǎn)品壽命分布類型測定實(shí)驗(yàn)[J];實(shí)驗(yàn)技術(shù)與管理;2008年10期

6 陳云霞;謝汶姝;曾聲奎;;功能分析與失效物理結(jié)合的可靠性預(yù)計(jì)方法[J];航空學(xué)報(bào);2008年05期

7 郭建平;任康;楊龍;南雁;;基于MSC.Fatigue的電子設(shè)備隨機(jī)振動疲勞分析[J];航空計(jì)算技術(shù);2008年04期

8 黃云;恩云飛;;電子元器件失效模式影響分析技術(shù)[J];電子元件與材料;2007年04期

9 陳亞英;朱煜;段廣洪;;基于Eyring連續(xù)模型電流變液阻尼特性研究[J];功能材料與器件學(xué)報(bào);2006年04期

10 李永紅;;電子系統(tǒng)和設(shè)備可靠性預(yù)計(jì)與評估標(biāo)準(zhǔn)及其指南淺析[J];航空標(biāo)準(zhǔn)化與質(zhì)量;2006年02期

相關(guān)會議論文 前1條

1 趙宇;謝勁松;;半導(dǎo)體器件的通用電遷移失效物理模型[A];第十一屆全國可靠性物理學(xué)術(shù)討論會論文集[C];2005年

相關(guān)博士學(xué)位論文 前3條

1 張亮;SnAgCu系無鉛焊點(diǎn)可靠性及相關(guān)理論研究[D];南京航空航天大學(xué);2011年

2 劉強(qiáng);基于失效物理的性能可靠性技術(shù)及應(yīng)用研究[D];國防科學(xué)技術(shù)大學(xué);2011年

3 程迎軍;高密度MCM-L的散熱及熱機(jī)械可靠性研究[D];中國科學(xué)院研究生院（上海微系統(tǒng)與信息技術(shù)研究所）;2006年

相關(guān)碩士學(xué)位論文 前7條

1 王慧明;PBGA電子封裝聚合物熱—濕力學(xué)特性及封裝可靠性的研究[D];太原理工大學(xué);2013年

2 李文吉;基于熱應(yīng)力的多物理量MCM封裝可靠性研究[D];西安電子科技大學(xué);2013年

3 廖軼明;PMOSFET中負(fù)柵壓溫度不穩(wěn)定性的空穴俘獲機(jī)理[D];南京大學(xué);2012年

4 彭建;基于失效物理的電子系統(tǒng)可靠性預(yù)計(jì)研究與實(shí)現(xiàn)[D];電子科技大學(xué);2012年

5 禹sリ，

本文編號：2060024