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飛秒激光硅表面微納結(jié)構(gòu)制備及其光學(xué)特性研究

發(fā)布時間:2018-06-13 16:06

  本文選題:飛秒激光 + 微結(jié)構(gòu)形貌; 參考:《長春理工大學(xué)》2016年碩士論文


【摘要】:利用飛秒激光對硅材料進(jìn)行微處理后,表面會形成一層微納米復(fù)合尺寸的圓錐狀柱形結(jié)構(gòu),這層結(jié)構(gòu)使半導(dǎo)體硅材料具備優(yōu)異的光學(xué)性能,對紫外到紅外波段光的吸收效率高達(dá)90%,我們稱這種材料為“黑硅”。這種微結(jié)構(gòu)表面在光電探測領(lǐng)域、太陽能光伏產(chǎn)業(yè)和場致發(fā)射器等方面都具有廣闊的應(yīng)用前景。黑硅這些新穎的功能特性與它表面的微結(jié)構(gòu)形貌是密不可分的,自黑硅誕生以來,對黑硅微納結(jié)構(gòu)形貌控制和優(yōu)化的研究從來沒有間斷過。本論文主要研究激光能量的不同累積方式以及激光波長對結(jié)構(gòu)尺寸的影響,從而實現(xiàn)黑硅表面微結(jié)構(gòu)的優(yōu)化與調(diào)控,提升其應(yīng)用潛力。在飛秒激光制備硅表面微納結(jié)構(gòu)過程中,首先進(jìn)行了激光能量的累積方式(調(diào)節(jié)激光輻照的脈沖數(shù)和調(diào)節(jié)單脈沖的激光能量)對表面形貌影響的研究。實驗發(fā)現(xiàn)相同的累積能量條件下表面形貌并不相同,而且過多的激光脈沖數(shù)和過高的激光功率對微結(jié)構(gòu)尺寸的增長沒有明顯效果,存在一個最佳的能量累積方式使結(jié)構(gòu)尺寸達(dá)到最大的同時還能減少激光能量的消耗和加快黑硅的制備速度,同時也避免過多能量沉積對硅表面造成的缺陷和損傷。通過模擬計算證明,產(chǎn)生這一現(xiàn)象的原因是表面形貌演化過程中微結(jié)構(gòu)表面對激光的吸收能力發(fā)生變化所導(dǎo)致。最后對優(yōu)化參數(shù)后制備出的黑硅樣品光吸收效率進(jìn)行了測試,測試結(jié)果表明對250nm—2500nm波段光吸收率大于95%,并分析了其光吸收機理。進(jìn)一步我們又進(jìn)行了800nm和400nm飛秒激光制備硅表面微結(jié)構(gòu)的對比研究,實驗發(fā)現(xiàn),在激光能量累積較少時,400nm激光在硅表面形成微結(jié)構(gòu)需要的激光總能量要比800nm激光少;但是在激光輻照能量較大時,800nm激光制備出微結(jié)構(gòu)的最終尺寸要比400nm激光大。這是由于激光對硅材料穿透深度的不同。
[Abstract]:After microtreating silicon material by femtosecond laser, the surface will form a conical cylindrical structure with micro and nano composite size, which makes the semiconductor silicon material have excellent optical properties. UV-to-infrared light absorption efficiency is as high as 90%, we call this material "black silicon." The microstructural surface has a wide application prospect in the field of photoelectricity detection, solar photovoltaic industry and field emitter. These novel functional properties of black silicon are closely related to the microstructure and morphology of its surface. Since the birth of black silicon, the control and optimization of the morphology of black silicon microstructures have never been interrupted. In this paper, the effects of different accumulative modes of laser energy and the influence of laser wavelength on the structure size are studied, so as to optimize and regulate the microstructure of black silicon surface and enhance its application potential. In the fabrication of silicon surface microstructures by femtosecond laser, the effect of laser energy accumulation (adjusting the number of pulses irradiated by laser and the laser energy of single pulse) on the surface morphology was studied. The experimental results show that the surface morphology is not the same under the same cumulative energy, and the excessive number of laser pulses and the excessive laser power have no obvious effect on the increase of the microstructure size. The existence of an optimal energy accumulation method can not only maximize the structure size, but also reduce laser energy consumption and speed up the preparation of black silicon, while avoiding the defects and damage caused by excessive energy deposition on the surface of silicon. The simulation results show that the reason for this phenomenon is the change of the absorption ability of the microstructure surface to the laser during the evolution of the surface morphology. Finally, the optical absorption efficiency of the black silicon samples prepared by optimizing the parameters is tested. The results show that the optical absorption rate of the 250nm-2500nm band is greater than 95, and the optical absorption mechanism of the black silicon sample is analyzed. Furthermore, we have made a comparative study on the fabrication of Si surface microstructures by 800nm and 400nm femtosecond laser. The experimental results show that the total energy required for the formation of Si surface microstructure by 400nm laser is less than that by 800nm laser. However, the final size of microstructures prepared by 800 nm laser is larger than that by 400nm laser. This is due to the different depth of laser penetration into silicon.
【學(xué)位授予單位】:長春理工大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2016
【分類號】:TN249;TN304.12

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