本文選題：壓接式IGBT + 電流均衡　； 參考：《華北電力大學(xué)(北京)》2017年碩士論文

【摘要】：在智能電網(wǎng)的發(fā)展中,安全是電網(wǎng)運(yùn)行的重要前提。但電力來源比較復(fù)雜,除了常規(guī)的水電、火電外,大規(guī)模的新能源接入到了電網(wǎng)中。正由于電力來源的多樣化,給電網(wǎng)的安全、平穩(wěn)運(yùn)行帶來嚴(yán)峻挑戰(zhàn)。要將這些來源復(fù)雜、大小不均的“粗電”變?yōu)榫鶆�、平穩(wěn)、安全的“精電”,需要IGBT這種半導(dǎo)體裝置發(fā)揮調(diào)節(jié)作用,且其功率越大,能夠承受的電壓區(qū)間也就越廣,調(diào)控能力隨之增強(qiáng),電網(wǎng)安全性能因此也會越高。在此背景下,研發(fā)大功率壓接式IGBT成為了電網(wǎng)發(fā)展的當(dāng)務(wù)之急。而為了保證壓接式IGBT的可靠性,必須考慮到其內(nèi)部各芯片的電流均衡情況。由于續(xù)流二極管的反向恢復(fù)特性,壓接式IGBT的開通過程中極易出現(xiàn)電流過沖。若再加上內(nèi)部芯片電流不均衡,必然會使得某一芯片電流過大而燒毀,影響了器件和系統(tǒng)的可靠性。因此本文對大功率壓接式IGBT內(nèi)部芯片的電流均衡進(jìn)行了一系列研究:1.分析了壓接式IGBT的結(jié)構(gòu)、工作原理及基本特性。2.將影響器件內(nèi)部芯片均流的因素分為兩類,并通過理論分析和仿真相結(jié)合,分析了各個參數(shù)變化對電流分布的影響情況。最終給出了將芯片的電流不均衡度限制在10%以內(nèi)時,各參數(shù)的范圍。3.提出了4種芯片電流均衡的方案,分別為降額法、柵極電阻補(bǔ)償法、多個參數(shù)匹配調(diào)節(jié)法、布局優(yōu)化。最后以3300V/1500A的壓接式IGBT器件為例,詳細(xì)分析了內(nèi)部芯片電流分布的特點(diǎn),并提出相應(yīng)的改進(jìn)方案。
[Abstract]:In the development of smart grid, security is an important prerequisite for grid operation. But the power source is complicated, besides the conventional hydropower and thermal power, large-scale new energy is connected to the power grid. Due to the diversification of power sources, the security and smooth operation of the power grid brings serious challenges. In order to change these "coarse electricity" from complex sources to "fine electricity" that is uniform, stable, and safe, IGBT, a semiconductor device, is required to play a regulatory role, and the greater the power, the wider the voltage range it can withstand. With the increase of regulation and control ability, the security performance of power grid will be higher. In this context, the research and development of high-power voltage-connected IGBT has become an urgent task for the development of power grid. In order to ensure the reliability of IGBT, the current balance of each chip must be considered. Due to the reverse recovery characteristics of the diode, current overshoot is easy to occur in the on-off process of the voltage-connected IGBT. If the internal chip current is not balanced, it will make a chip current too large and burn down, which will affect the reliability of the device and system. Therefore, in this paper, a series of studies on the current equalization of high power voltage-connected IGBT chips are carried out. The structure, working principle and basic characteristics of pressure-connected IGBT are analyzed. The factors that affect the current sharing in the chip are divided into two categories, and the influence of various parameters on the current distribution is analyzed through theoretical analysis and simulation. Finally, the range of parameters. 3 is given when the current imbalance of the chip is limited to less than 10%. Four kinds of current equalization schemes are put forward, which are the reduction method, the gate resistance compensation method, the multi-parameter matching and adjusting method, and the layout optimization. Finally, taking the 3300V / 1500A voltage-connected IGBT device as an example, the characteristics of the internal chip current distribution are analyzed in detail, and the corresponding improvement scheme is put forward.
【學(xué)位授予單位】：華北電力大學(xué)(北京)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8

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本文編號：2012131