本文選題：薄層金屬鍵合 + Au-Si共晶�。� 參考：《南京大學(xué)》2015年碩士論文

【摘要】：氮化鎵(GaN)基發(fā)光二極管(LED)是目前固態(tài)照明領(lǐng)域的研究焦點(diǎn)。產(chǎn)業(yè)界通常采用異質(zhì)外延生長(zhǎng)GaN薄膜,普遍采用藍(lán)寶石(Al2O3)作為襯底外延生長(zhǎng)GaN薄膜,但晶格失配(13.4%)嚴(yán)重制約GaN薄膜的質(zhì)量,影響LED的性能。另外熱膨脹系數(shù)的差異(25.5%)對(duì)大功率LED也有不利的影響。硅(Si)襯底的導(dǎo)熱和導(dǎo)電性要優(yōu)于藍(lán)寶石材料,在氮化鎵(GaN)基發(fā)光二極管(LED)領(lǐng)域具有良好的應(yīng)用前景,但Si襯底材料同樣具有晶格失配與熱膨脹差異的問(wèn)題。利用晶圓鍵合技術(shù)可以在不影響GaN薄膜質(zhì)量的前提下實(shí)現(xiàn)A1203基GaN薄膜向Si襯底的轉(zhuǎn)移。晶圓鍵合技術(shù)作為晶圓級(jí)封裝的關(guān)鍵技術(shù),是目前芯片封裝領(lǐng)域的研究焦點(diǎn)。晶圓級(jí)封裝技術(shù)可以實(shí)現(xiàn)在整片晶圓級(jí)別上完成封裝與測(cè)試,并且能夠減小封裝后的芯片尺寸,同時(shí)大幅降低封裝與測(cè)試成本,因此成為未來(lái)芯片封裝的發(fā)展方向。在GaN基LED領(lǐng)域,晶圓鍵合技術(shù)同樣有關(guān)鍵的應(yīng)用,利用晶圓鍵合工藝,可以將藍(lán)寶石襯底的GaN外延層轉(zhuǎn)移至硅襯底上,從而在不改變GaN薄膜質(zhì)量的同時(shí)獲得更優(yōu)秀的導(dǎo)熱與導(dǎo)電性,實(shí)現(xiàn)高效及大功率GaN基LED芯片制備。本論文選擇Au-Si共晶作為晶圓鍵合手段,完成了Si-Si, Si-GaN晶圓鍵合,主要工作內(nèi)容如下：1.在Si襯底上制備Si/Au、Si/Ni/Au、Si/Ti/Au結(jié)構(gòu)多層膜,進(jìn)行多種條件下的退火實(shí)驗(yàn),研究了不同結(jié)構(gòu)金屬層對(duì)Au/Si共晶體系中硅擴(kuò)散的影響,并提出勢(shì)壘模型來(lái)解釋擴(kuò)散阻擋層的失效機(jī)制。2.利用Au-Si共晶技術(shù)完成了Si-Si、Si-GaN晶圓鍵合,通過(guò)調(diào)整鍵合工藝,添加共晶擴(kuò)散步驟,實(shí)現(xiàn)了較薄金屬過(guò)渡層條件下的高強(qiáng)度鍵合。上述研究完成了芯片襯底轉(zhuǎn)移工藝的理論及實(shí)驗(yàn)準(zhǔn)備,可以為后期的倒裝型LED、垂直型LED芯片制備提供實(shí)驗(yàn)基礎(chǔ)。
[Abstract]:Gallium nitride (gan)-based light emitting diode (LED) is the focus of solid state lighting. Gan thin films are grown by heteroepitaxial growth in industry, and gan films are grown on sapphire Al2O3 substrate. However, lattice mismatch (13.4) seriously restricts the quality of gan films and affects the performance of LED. In addition, the difference in coefficient of thermal expansion of 25. 5) also has a negative impact on high-power LEDs. The thermal conductivity and electrical conductivity of Si / Si substrates are superior to those of sapphire materials and have a good prospect in the field of GaN-based light emitting diodes (LEDs), but Si substrates also have the difference of lattice mismatch and thermal expansion. The wafer bonding technique can realize the transfer of A1203 gan films to Si substrates without affecting the quality of gan films. Wafer bonding technology, as the key technology of wafer level packaging, is the focus of research in chip packaging field. Wafer level packaging technology can achieve packaging and testing at the wafer level, and can reduce the chip size after packaging, and greatly reduce the cost of packaging and testing, so it will become the development direction of chip packaging in the future. Wafer bonding technology also has a key application in GaN-based LED field. Using wafer bonding technology, gan epitaxial layer of sapphire substrate can be transferred to silicon substrate. Thus, better thermal conductivity and conductivity can be obtained without changing the quality of gan films, and high efficiency and high power GaN-based LED chips can be fabricated. In this paper, Au-Si eutectic is selected as wafer bonding method. Si-Si, Si-GaN wafer bonding is accomplished. The main work is as follows: 1. The Si / au / Ni / Ni / Si / Ti / au multilayer films were prepared on Si substrates. Annealing experiments were carried out under various conditions. The effects of different structure metal layers on silicon diffusion in Au/ Si eutectic system were investigated, and a barrier model was proposed to explain the failure mechanism of diffusion barrier layer. The Si Si Si gan wafer bonding was accomplished by Au-Si eutectic technology. By adjusting the bonding process and adding the eutectic diffusion step, the high strength bonding was realized under the condition of thin metal transition layer. The above studies have completed the theoretical and experimental preparation of chip substrate transfer technology, which can provide experimental basis for the fabrication of inverted LED and vertical LED chips.
【學(xué)位授予單位】：南京大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.8

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本文編號(hào)：2009390