發(fā)布時間：2018-06-12 09:20

  本文選題：高壓大功率GaN晶體管 + 開關(guān)特性��； 參考：《北京交通大學(xué)》2017年碩士論文

【摘要】：基于氮化鎵(GaN)材料的新型半導(dǎo)體功率器件由于其高電子遷移率、高飽和漂移速度、高臨界擊穿電場等優(yōu)異的電氣特性,在高壓、高頻和大功率場合具有巨大的潛力,受到人們的廣泛關(guān)注。但是由于GaN器件本身的導(dǎo)通電阻(Rds_on)較小,以及基于GaN器件的布局設(shè)計要求的高頻環(huán)路面積較小,導(dǎo)致總體高頻環(huán)路阻尼較小,且高壓大功率GaN器件自身開關(guān)速度極快,開通電流變化率可達(dá)3000A/us,因此易出現(xiàn)電壓電流的振蕩現(xiàn)象,尤其是在橋式結(jié)構(gòu)當(dāng)中,令GaN器件在高頻中的應(yīng)用受到限制。因此,本文針對高壓大功率GaN功率器件在橋式結(jié)構(gòu)中的振蕩現(xiàn)象展開以下研究工作:首先在介紹GaN器件研究背景和國內(nèi)外的器件研究現(xiàn)狀的基礎(chǔ)上,總結(jié)了高壓大功率GaN器件的器件特性研究現(xiàn)狀和振蕩研究現(xiàn)狀;其次在精確測試平臺基礎(chǔ)上,對Cascode型和E-mode型兩款同等級的高壓大功率GaN功率器件進行測試,分析其開關(guān)性能,給出兩者的開通與關(guān)斷損耗的數(shù)學(xué)模型,并利用測試結(jié)果對Cascode型和E-mode型兩款同等級GaN器件進行對比;針對高壓大功率GaN器件在測試過程中表現(xiàn)出的振蕩現(xiàn)象,本文結(jié)合開關(guān)特性測試結(jié)果,首先分析了 E-mode型GaN器件和Cascode型GaN器件的開關(guān)過程,并基于該開關(guān)過程,對高壓大功率GaN器件的振蕩現(xiàn)象進行分析,給出了基于寄生參數(shù)的外部誤導(dǎo)通和基于Cascode結(jié)構(gòu)的內(nèi)部誤導(dǎo)通兩種振蕩誘因,并給出了振蕩現(xiàn)象發(fā)生后,GaN器件所呈現(xiàn)的3種狀態(tài);基于兩種振蕩誘因,本文分別給出振蕩的抑制方案,并通過仿真和部分實驗進行了驗證。最后本文結(jié)合開關(guān)特性測試結(jié)果和振蕩抑制方案,分別搭建了雙脈沖測試平臺和Boost實驗平臺和雙Buck逆變器實驗平臺,對高壓大功率GaN器件進行應(yīng)用設(shè)計。實驗結(jié)果分別驗證了其在橋式結(jié)構(gòu)中的振蕩誘因及振蕩抑制方案的有效性;驗證了高頻環(huán)路優(yōu)化對GaN器件應(yīng)用的重要性;最后利用雙脈沖測試平臺,針對高壓大功率GaN器件進行了驅(qū)動設(shè)計優(yōu)化。
[Abstract]:Novel semiconductor power devices based on gallium nitride (gan) have great potential in high voltage, high frequency and high power applications due to their excellent electrical properties such as high electron mobility, high saturation drift velocity and high critical breakdown electric field. Get people's wide attention. However, due to the smaller on-resistance of gan devices and the smaller area of high-frequency loops required by the layout design of GaN-based devices, the damping of the overall high-frequency loops is lower, and the switching speed of high-voltage and high-power gan devices is extremely fast. The change rate of on-off current can reach 3000A / s, so the oscillation of voltage and current is easy to occur, especially in bridge structure, which limits the application of gan devices in high frequency. Therefore, in this paper, the oscillation of high-voltage and high-power gan devices in bridge structure is studied as follows: firstly, based on the introduction of the research background of gan devices and the current research situation of GaN devices at home and abroad, The characteristics and oscillations of high-voltage and high-power gan devices are summarized. Secondly, on the basis of accurate test platform, two kinds of high-voltage and high-power gan power devices of the same class Cascode and E-mode are tested, and their switching performance is analyzed. The mathematical model of switching on and off loss is given, and the Cascode type and E-mode type gan devices of the same class are compared with the test results, and the oscillatory phenomena of high voltage and high power gan devices during the testing process are analyzed. In this paper, the switching process of E-mode gan device and Cascode type gan device is analyzed, and the oscillation phenomenon of high-voltage and high-power gan device is analyzed based on the switching process. Two inducements of external misdirection based on parasitic parameters and internal misdirection based on Cascode structure are given, and the three states of gan devices after oscillation are given. In this paper, the suppression scheme of oscillation is given, and it is verified by simulation and some experiments. Finally, combined with the test results of switching characteristics and the scheme of oscillation suppression, the dual pulse test platform, boost experimental platform and double Buck inverter experimental platform are built, respectively, and the application design of high voltage and high power gan devices is carried out. The experimental results verify the oscillation inducement and the effectiveness of the oscillation suppression scheme in the bridge structure, and verify the importance of the high-frequency loop optimization in the application of gan devices. Finally, the dual-pulse test platform is used. The drive design of high voltage and high power gan devices is optimized.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN386

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本文編號：2009178