本文選題：藍(lán)寶石 + 超聲釬焊　； 參考：《哈爾濱工業(yè)大學(xué)》2017年碩士論文

【摘要】：藍(lán)寶石具有優(yōu)異的高頻特性與光學(xué)性能,且電子元器件的線膨脹系數(shù)非常相近,因此是如今應(yīng)用最廣泛的封裝襯底和基板材料。在電子封裝領(lǐng)域出于對(duì)溫度的要求主要使用低溫軟釬焊技術(shù)對(duì)藍(lán)寶石進(jìn)行連接,但因其化學(xué)性質(zhì)穩(wěn)定而很難和釬料潤濕。本文擬采用添加活性元素Ti和Al的Sn基活性釬料并引入超聲作用改善潤濕性,在大氣環(huán)境下實(shí)現(xiàn)藍(lán)寶石的有效連接,并研究其連接機(jī)理。首先使用添加活性元素Ti的SnAg基活性釬料Sn3.5Ag4Ti超聲釬焊藍(lán)寶石,試驗(yàn)結(jié)果表明,該釬料對(duì)藍(lán)寶石的潤濕性很好,直接超聲釬焊和超聲熱浸后超聲釬焊均可在藍(lán)寶石間形成良好連接,超聲熱浸時(shí)間10s達(dá)到穩(wěn)定強(qiáng)度33MPa,繼續(xù)延長(zhǎng)超聲時(shí)間不影響接頭強(qiáng)度。界面連接機(jī)理為超聲作用下釬料中高活性的Ti向界面富集并分別和藍(lán)寶石表面的Al_2O_3與空氣中的O發(fā)生置換反應(yīng)和沉積反應(yīng)在界面形成厚薄不同且不均勻的Ti_2O_3沉積層。其次使用添加活性元素Al的SnAg基活性釬料Sn3.5Ag4Al超聲釬焊藍(lán)寶石,該釬料的潤濕性相對(duì)較差,直接超聲釬焊不能連接藍(lán)寶石,通過超聲熱浸改善潤濕性后才能在藍(lán)寶石間形成良好連接。剪切強(qiáng)度隨超聲熱浸時(shí)間的延長(zhǎng)而提高,超聲熱浸100s時(shí)最高強(qiáng)度達(dá)到36MPa。界面連接機(jī)理為超聲作用下釬料中的Al及Al的化合物溶解后向界面擴(kuò)散并與O反應(yīng)生成Al_2O_3,TEM結(jié)果證明,界面處Al_2O_3非晶層和Ag的富集是其界面強(qiáng)化因素。但上述兩種釬料中活性元素Ti和Al都以化合物的形式存在而不易溶解,且這兩者釬料中含有成本高的貴金屬Ag。因此本文提出用成本較低的Sn9Zn2Al釬料,該釬料有Sn Zn Al的低熔點(diǎn)三元共晶相而更易溶解。使用Sn9Zn2Al釬料超聲釬焊藍(lán)寶石,試驗(yàn)證明直接超聲釬焊和超聲熱浸后超聲釬焊均可以實(shí)現(xiàn)藍(lán)寶石的良好連接。隨超聲時(shí)間的延長(zhǎng),接頭剪切強(qiáng)度分20s~50s快速上升和50s~2000s緩慢上升兩個(gè)階段,其界面連接機(jī)制和Sn3.5Ag4Al相似,界面處Al_2O_3非晶層和Zn的富集是其界面強(qiáng)化因素。采用含Zn量不同的釬料SnxZn2Al(x=9,25,45)直接超聲釬焊藍(lán)寶石,均實(shí)現(xiàn)了藍(lán)寶石的良好連接,且強(qiáng)度隨含Zn量的增加而提高。使用Sn45Zn2Al時(shí)所得接頭強(qiáng)度最高可達(dá)32MPa。通過增加釬料含Zn量實(shí)現(xiàn)了藍(lán)寶石短時(shí)間較高強(qiáng)度的連接。
[Abstract]:Sapphire has excellent high frequency characteristics and optical properties, and the linear expansion coefficient of electronic components is very similar, so it is the most widely used packaging substrate and substrate materials. In the field of electronic packaging, the low temperature soldering technology is mainly used to connect sapphire due to the requirement of temperature, but it is difficult to wetting the solder because of its stable chemical properties. In this paper, Sn-based active solders with active elements Ti and Al are introduced to improve wettability, to realize the effective connection of sapphire in atmosphere, and to study the bonding mechanism of sapphire. Sn-Ag based active solder Sn3.5Ag4Ti was first used for ultrasonic brazing of sapphire. The experimental results show that the solder has good wettability to sapphire. Direct ultrasonic brazing and ultrasonic hot dip ultrasonic brazing can form a good connection between sapphire, and the ultrasonic hot dip time can reach a steady strength of 33MPa, and the extension of ultrasonic time does not affect the joint strength. The interface bonding mechanism is that the highly active Ti in the solder is enriched to the interface under the action of ultrasound and replaced with Al _ S _ 2O _ 3 on the sapphire surface and deposited with O in air to form a thin and uneven Ti _ 2O _ 3 deposit layer at the interface. Secondly, the Sn-Ag based active solder Sn3.5Ag4Al was used to weld sapphire. The wettability of the filler metal was relatively poor, and direct ultrasonic brazing could not connect sapphire. The wettability of sapphire can be improved by ultrasonic hot dip before a good connection between sapphire can be formed. The shear strength increases with the prolongation of ultrasonic hot dip time, and the maximum strength of ultrasonic hot dip reaches 36 MPA at 100 s. The interface bonding mechanism is that the Al and Al compounds in the filler metal dissolves and diffuses back to the interface and reacts with O to form Al _ 2O _ 3C _ T. The results of TEM show that the enrichment of Al _ 2O _ 3 amorphous layer and Ag at the interface is the main factor for the interface strengthening of Al _ 2O _ 3 and Al _ 2O _ 3. However, the active elements Ti and Al in the above two brazing alloys exist in the form of compounds and are insoluble, and the two solders contain high cost precious metal Ag. Therefore, a low cost Sn9Zn2Al solder is proposed, which has the low melting point ternary eutectic phase of Sn Zn Al and is easier to dissolve. Using Sn9Zn2Al solder for ultrasonic brazing sapphire, it is proved that both direct ultrasonic brazing and ultrasonic hot dip ultrasonic brazing can realize the good connection of sapphire. With the extension of ultrasonic time, the shear strength of the joint increases rapidly in 20s~50s and 50s~2000s slowly, and the interface bonding mechanism is similar to that of Sn3.5Ag4Al, and the enrichment of Al2O3 amorphous layer and Zn at the interface is the factor of interface strengthening. Direct ultrasonic brazing of sapphire with different Zn content of SnxZn _ 2AlN _ (9) O _ (9) (25 ~ (45) has realized good connection of sapphire, and the strength of sapphire is increased with the increase of Zn content. The maximum strength of the joints obtained with Sn45Zn2Al is up to 32MPa. The connection of sapphire with high strength in short time was realized by increasing Zn content of solder.
【學(xué)位授予單位】：哈爾濱工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN05

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本文編號(hào)：1998645