本文選題：氫化物氣相外延(HVPE) + 氮化鎵��； 參考：《半導體技術(shù)》2017年07期

【摘要】：GaN納米材料因具有優(yōu)異的晶體質(zhì)量和突出的光學性能及發(fā)射性能,日益受到關(guān)注。研究了一種利用氫化物氣相外延(HVPE)系統(tǒng)生長高質(zhì)量的Ga N納米柱的方法。使用鎳作為催化劑,在藍寶石襯底上生長出了GaN納米柱。在不同生長時間和不同HCl體積流量下制備了多組樣品,使用掃描電子顯微鏡(SEM)、X射線衍射(XRD)和光致發(fā)光(PL)譜對樣品進行了分析表征。測試結(jié)果表明,在較低的HCl體積流量下,生長2 min的樣品具有較高的晶體質(zhì)量和較好的光學性質(zhì)。討論了不同生長階段的GaN納米結(jié)構(gòu)發(fā)光特性的變化規(guī)律,認為納米結(jié)構(gòu)所產(chǎn)生的表面態(tài)密度大小差異會造成帶邊峰位的紅移和展寬。
[Abstract]:GaN nanomaterials have attracted more and more attention due to their excellent crystal quality, outstanding optical properties and emission properties. A method for the growth of high quality gan nanorods using hydride vapor phase epitaxy (HVPE) system has been studied. GaN nanorods were grown on sapphire substrate using nickel as catalyst. A number of samples were prepared at different growth times and different volume flow rates of HCl. The samples were characterized by scanning electron microscopy (SEM) and photoluminescence (PL) spectra. The results show that the samples grown for 2 min have higher crystal quality and better optical properties at lower volume flow rate of HCl. The variation of luminescence characteristics of GaN nanostructures at different growth stages is discussed. It is considered that the difference in the density of surface states produced by the nanostructures will result in the redshift and broadening of the band side peaks.
【作者單位】： 南京郵電大學電子科學與工程學院;南京大學電子科學與工程學院;
【基金】：國家自然科學基金資助項目(61574079,61274003,61400401,51461135002,61334009) 國家重點研發(fā)計劃資助項目(2016YFB0400100,2016YFB0400602) 國家高技術(shù)研究發(fā)展規(guī)劃資助項目(2015AA033305) 江蘇省自然科學基金資助項目(BY2013077,BK20141320,BE2015111)
【分類號】：TN304.23

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