本文選題：Zn_3N_2前驅(qū)體 + 反應(yīng)磁控濺射　； 參考：《電子科技大學(xué)》2017年碩士論文

【摘要】：ZnO(氧化鋅)是一種新型的在光電探測領(lǐng)域具有很大潛力的直接帶隙半導(dǎo)體材料,禁帶寬度為3.37eV,計算可知其對應(yīng)波長在近紫外區(qū)域,可見光波段透明。具有抗輻射性能優(yōu)秀、熱穩(wěn)定性能好、無毒無污染、原料豐富、禁帶寬度可調(diào)等諸多優(yōu)點,目前來說,雖然國際范圍內(nèi)的研究者們已經(jīng)通過P-MBE(等離子輔助分子束外延)、PLD(激光脈沖沉積)等技術(shù)制備了性能較好的ZnO紫外光電器件,但仍存在一些需要更加深入研究的問題,例如p型導(dǎo)電的機理、穩(wěn)定且具有較高空穴濃度和遷移率p型薄膜的制備工藝、摻雜技術(shù)等深入研究。本文采用“兩步法”來制備氮摻雜的氧化鋅薄膜,首先利用射頻反應(yīng)磁控濺射技術(shù),以Zn為靶材,N2為反應(yīng)氣體,在石英襯底上沉積Zn3N2(氮化鋅)薄膜,接著在管式爐中高溫氧化,將Zn3N2轉(zhuǎn)變?yōu)閆nO,通過控制氧化的進程來達到制備ZnO:N的目的。這種方法工藝較為簡單,并且在一定程度上提高了N的固溶度。我們研究了射頻反應(yīng)磁控濺射中,氮氬分壓、濺射功率和襯底溫度對Zn3N2薄膜沉積的影響。得出結(jié)論,在氮氬分壓為2:1、濺射功率80W、襯底溫度200℃條件下能制備出形貌較好,成膜均勻的Zn3N2薄膜。接著將Zn3N2薄膜放入管式爐中,在不同溫度下氧化使其轉(zhuǎn)變?yōu)閆nO:N,我們利用SEM(掃描電子顯微鏡)、XRD(X射線衍射)、UV-Vis(紫外-可見分光光度法)等技術(shù)手段對ZnO:N薄膜進行表征,得出結(jié)論,在氧化溫度為700℃、氧化時間3小時的條件下,ZnO:N薄膜呈良好的c軸擇優(yōu)取向生長,晶體中缺陷較少,可見光波段透射率在90%,而在紫外波段具有強烈的吸收,擬合計算得出其光學(xué)禁帶寬度約為3.55eV�？昭舛葹�1.6×1015cm-3,遷移率為0.3cm2/Vs。最后通過在ZnO:N薄膜上濺射Cu叉指電極將其制備成MSM結(jié)構(gòu)的紫外光電導(dǎo)探測器,600℃退火后通過I-V測試表明金屬和薄膜形成了較好的歐姆接觸。器件暗電流為13.4mA,以254nm的紫外汞燈為光源,測得其光電流為32.2mA,光暗電流比約為2.4,說明薄膜對紫外光有一定的探測性能。
[Abstract]:ZnO (zinc oxide) is a new type of direct bandgap semiconductor material with great potential in the field of photoelectric detection. The band gap width is 3.37 EV. The corresponding wavelength is in the near ultraviolet region and the visible wavelength is transparent. It has many advantages, such as excellent radiation resistance, good thermal stability, non-toxic and pollution-free, abundant raw materials, adjustable bandgap and so on. Although researchers at the international level have prepared ZnO ultraviolet photovoltaic devices with better performance by plasma assisted molecular beam epitaxy (PLD) and other technologies, there are still some problems that need to be further studied. For example, the mechanism of p-type conduction, the preparation process of p-type films with stable and high hole concentration and mobility, the doping technology, etc. In this paper, nitrogen-doped zinc oxide thin films were prepared by "two-step method". Firstly, Zn _ 3N _ 2 (Zn _ 3N _ 2) thin films were deposited on quartz substrates by RF reactive magnetron sputtering (RF reactive magnetron sputtering) and then oxidized at high temperature in tube furnaces, and Zn _ 3N _ 2 (Zn _ 3N _ 2) thin films were deposited on quartz substrates. Zn3N2 was transformed into ZnO and ZnO:N was prepared by controlling the oxidation process. This method is simple and improves the solubility of N to some extent. The effects of partial pressure of argon nitrogen, sputtering power and substrate temperature on the deposition of Zn3N2 thin films have been investigated in RF reactive magnetron sputtering. It is concluded that Zn3N2 thin films with good morphology and uniform film formation can be prepared under the conditions of nitrogen argon partial pressure of 2: 1, sputtering power of 80 W and substrate temperature of 200 鈩，

本文編號：1972888