本文選題：太赫茲波調(diào)制器 + 石墨烯��； 參考：《電子科技大學》2017年碩士論文

【摘要】：隨著超快激光技術(shù)和太赫茲探測技術(shù)的發(fā)展,國內(nèi)外高校和科研機構(gòu)紛紛投入到太赫茲功能器件的研發(fā)熱潮當中,使得太赫茲吸收、濾波、調(diào)制等功能器件取得了快速的發(fā)展。近年來,石墨烯、超材料等大量的新材料、新結(jié)構(gòu)被引入到太赫茲領域,使得太赫茲波調(diào)控技術(shù)的發(fā)展尤為迅速。本文以此為研究背景,基于背柵晶體管結(jié)構(gòu)和現(xiàn)有的半導體工藝,設計并制備了將石墨烯和超材料結(jié)構(gòu)相結(jié)合的太赫茲波調(diào)制器,并對其性能進行研究。除此之外,針對調(diào)制器的實際應用環(huán)境,我們提出了兩種基于柔性襯底的太赫茲波調(diào)制器。本文首先研究了石墨烯的一般轉(zhuǎn)移工藝,并通過分析轉(zhuǎn)移時遇到的問題,對轉(zhuǎn)移工藝進行優(yōu)化,獲得了質(zhì)量良好的石墨烯薄膜。接著根據(jù)傳統(tǒng)的晶體管結(jié)構(gòu),設計了一種以石墨烯為溝道的背柵晶體管,通過不斷調(diào)整優(yōu)化工藝和摸索工藝參數(shù),制備出了性能良好的背柵石墨烯晶體管。然后提出了一種將石墨烯和超材料結(jié)構(gòu)結(jié)合的太赫茲波調(diào)制器,根據(jù)之前制備背柵石墨烯晶體管的經(jīng)驗,成功制備出了具有選頻特性的太赫茲波調(diào)制器件,通過電學調(diào)控,在設計的頻點處,獲得了6%的調(diào)制深度。針對二氧化硅容易擊穿的缺點,我們提出了改進方案,即用氧化鋁作為柵介質(zhì),并優(yōu)化了超材料結(jié)構(gòu),最終經(jīng)過THz-TDS時域光譜系統(tǒng)測試,改進后的調(diào)制器的調(diào)制深度提升了一倍,達到了13%。最后,我們研究了基于柔性襯底太赫茲波調(diào)制器。其中,以PET為襯底的多級太赫茲波調(diào)制器,通過控制施加電壓的方式,可實現(xiàn)四級調(diào)制,最大調(diào)制深度高達36%;以PDMS為襯底的薄層硅太赫茲波調(diào)制器,在808nm激光作用下實現(xiàn)了透射增強,并通過刻蝕薄層硅,獲得了可拉伸的太赫茲波調(diào)制器。本論文的研究內(nèi)容比較前沿,為太赫茲調(diào)制器的發(fā)展提供了一些新思路、新方向,可做進一步研究。
[Abstract]:With the development of ultra-fast laser technology and terahertz detection technology, universities and scientific research institutions at home and abroad have invested in the research and development of terahertz functional devices, resulting in the rapid development of terahertz absorption, filtering, modulation and other functional devices. In recent years, a large number of new materials, such as graphene and metamaterials, have been introduced into the field of terahertz. In this paper, a terahertz wave modulator combining graphene and metamaterials is designed and fabricated based on the back gate transistor structure and the existing semiconductor technology. The performance of the modulator is studied. In addition, we propose two terahertz wave modulators based on flexible substrate for the practical application of modulator. In this paper, the general transfer process of graphene was studied, and through the analysis of the problems encountered in the transfer, the transfer process was optimized, and the graphene film with good quality was obtained. Then, according to the traditional transistor structure, a kind of back gate transistor with graphene as the channel is designed. By continuously adjusting the process and groping the process parameters, the back gate graphene transistor with good performance is prepared. Then, a terahertz wave modulator which combines graphene with metamaterial structure is proposed. According to the experience of fabricating the back gate graphene transistor, a terahertz wave modulator with the characteristic of frequency selection is successfully fabricated, which is controlled by electricity. A modulation depth of 6% is obtained at the designed frequency. Aiming at the disadvantage of silicon dioxide breakdown easily, we put forward an improved scheme, that is, using alumina as gate medium and optimizing the structure of supermaterial. Finally, the modulation depth of the improved modulator was doubled after THz-TDS time-domain spectrum system test. It has reached 13 points. Finally, we study the terahertz wave modulator based on flexible substrate. The multistage terahertz wave modulator with PET as substrate can realize four-stage modulation by controlling the applied voltage, and the maximum modulation depth is up to 36. The thin layer silicon terahertz wave modulator based on PDMS substrate, The transmission enhancement is realized by 808nm laser, and the extensible terahertz modulator is obtained by etching thin layer silicon. The research content of this thesis is very advanced, which provides some new ideas and new directions for the development of terahertz modulator.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN761

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本文編號：1969610