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退火處理對有機(jī)電致發(fā)光器件性能的影響

發(fā)布時間:2018-05-31 13:03

  本文選題:有機(jī)電致發(fā)光器件 + 退火處理; 參考:《重慶師范大學(xué)》2015年碩士論文


【摘要】:有機(jī)電致發(fā)光器件(organic light emitting device,OLED)以其制備工藝簡單、輕質(zhì)便攜、可選材料豐富、視角寬、柔性易彎折等優(yōu)點,在顯示和照明領(lǐng)域具有廣泛的應(yīng)用前景,受到越來越多的關(guān)注。盡管有機(jī)電致發(fā)光器件至今已發(fā)展近30年,但在單色OLED研究中,藍(lán)光器件在效率,穩(wěn)定性和壽命等方面仍不及紅、綠兩色器件。這主要是由于藍(lán)光材料能隙大,選擇合適的藍(lán)光材料比較困難所造成的。本論文采用控制溫度進(jìn)行原位退火處理來實現(xiàn)綠光材料Alq3發(fā)光光譜藍(lán)移,并從界面勢壘,載流子遷移,載流子復(fù)合等物理機(jī)制等角度,來分析采用退火處理后器件性能變化的原因。本文首先探討了氧等離子體處理ITO陽極后,對所制備結(jié)構(gòu)為ITO/NPB(50nm)/Alq3(60 nm)/Al(100 nm)標(biāo)準(zhǔn)器件性能的影響。我們使用氧等離子體對ITO陽極進(jìn)行不同功率(0,40,50,60,70 W)和不同時間(0,5,10,15,20 min)的處理,利用處理后的ITO陽極制備標(biāo)準(zhǔn)器件,并采用keithley2400-PR655測試系統(tǒng)對器件的電壓-電流-亮度特性進(jìn)行測試。研究了標(biāo)準(zhǔn)器件ITO陽極氧等離子體在實驗條件允許范圍內(nèi)的最佳處理功率和最佳處理時間。經(jīng)過氧等離子體處理的ITO陽極,其表面得到徹底清洗的同時,提高了ITO陽極的功函數(shù),降低了空穴的注入勢壘,提高了空穴注入率,進(jìn)而提高了所制備器件的發(fā)光效率和亮度。實驗證明,當(dāng)腔室內(nèi)的壓強控制在約80 Pa,清洗功率為70 W時,氧等離子體處理持續(xù)15min后所制備的器件性能最好。我們探討了退火處理對Alq3晶相和光譜的影響。我們制備了ITO/Alq3(60 nm)/NPB(50 nm)和ITO/NPB(50 nm)/Alq3(60 nm)樣片,在90,120,130,145,160,180℃下進(jìn)行90 min的真空原位退火處理,研究其晶相,光致發(fā)光譜與透射譜的變化情況。發(fā)現(xiàn)隨著退火溫度的升高,尤其是130℃以上溫度Alq3出現(xiàn)結(jié)晶現(xiàn)象,出現(xiàn)新晶相,即β-Alq3,導(dǎo)致Alq3的光致發(fā)光譜峰值也從未退火處理時的539 nm,逐漸藍(lán)移到503 nm,發(fā)生了大約30 nm的藍(lán)移,其透射吸收峰也出現(xiàn)藍(lán)移現(xiàn)象。圍繞退火處理對有機(jī)電致發(fā)光器件性能影響的研究主題,我們制備了標(biāo)準(zhǔn)器件。同樣在90,120,130,145,160,180℃下進(jìn)行90 min的真空原位退火處理,進(jìn)一步研究了退火處理對有機(jī)電致發(fā)光器件光電性能的影響。由于退火處理使得Alq3出現(xiàn)新晶相,載流子在有機(jī)層內(nèi)的遷移減弱,整體上呈現(xiàn)隨著退火溫度升高,器件啟亮電壓逐漸增大,亮度也隨之下降的規(guī)律。其中退火溫度從130℃到145℃過程中,出現(xiàn)稍稍變化,推測Alq3出現(xiàn)了大部分甚至全部結(jié)晶的現(xiàn)象,使得有機(jī)層界面出現(xiàn)新的契機(jī),更加適合電子與空穴的遷移。當(dāng)退火溫度達(dá)到180℃時,低電壓情況下就會出現(xiàn)Al陰極脫落現(xiàn)象,無法測量此溫度退火處理后器件的光電性能。但從器件的壽命和穩(wěn)定性方面考慮,與未進(jìn)行退火處理的器件相比,退火處理后器件未出現(xiàn)明顯發(fā)熱甚至炸裂的現(xiàn)象。在130℃退火處理后的電流效率達(dá)到最大值為2.38 cd/A。同時,器件的電致發(fā)光光譜峰值發(fā)生約30 nm的藍(lán)移,與結(jié)晶后產(chǎn)生β-Alq3的光譜藍(lán)移現(xiàn)象相同。
[Abstract]:Organic electroluminescent devices (organic light emitting device (OLED)) have been widely used in the field of display and lighting, with its advantages of simple preparation technology, portable light quality, rich light quality, wide selectable material, wide angle of view, flexible flexural and so on. The organic electroluminescent device has been developed for nearly 30 years, but in monochromatic O In the LED study, blue light devices are still less than red in efficiency, stability and life expectancy. This is mainly due to the difficulty in selecting the suitable blue light materials because of the large gap in the blue light materials. This paper uses the control temperature to carry out the in-situ annealing treatment to realize the blue shift of the green light material Alq3 luminescence spectrum, and from the interface barrier, The effects of carrier migration, carrier recombination and other physical mechanisms on the performance changes of the devices after annealing are analyzed. First, the effects of the oxygen plasma on the performance of the ITO/NPB (50nm) /Alq3 (60 nm) /Al (100 nm) standard device after the oxygen plasma treatment of the ITO anode are investigated. We use oxygen plasma to carry out the ITO anode. The processing of different power (0,40,50,60,70 W) and different time (0,5,10,15,20 min), using the treated ITO anode to prepare standard devices, and using keithley2400-PR655 test system to test the voltage current luminance characteristics of the device, and study the best treatment of the standard device ITO anodic oxygen plasma in the allowable range of experimental conditions. Power and optimum processing time. The surface of the ITO anode treated by oxygen plasma is thoroughly cleaned, while the work function of the ITO anode is improved, the injection barrier of the cavity is reduced, the hole injection rate is increased, and the luminous efficiency and brightness of the fabricated devices are improved. The experiment shows that the pressure control in the chamber is about 80 Pa, When the cleaning power is 70 W, the performance of the devices prepared by the oxygen plasma treatment for 15min is the best. We discuss the effect of annealing treatment on the crystal phase and the spectrum of Alq3. We have prepared ITO/Alq3 (60 nm) /NPB (50 nm) and ITO/NPB (50 nm) /Alq3 (60 nm) samples, and carried out the vacuum in-situ annealing treatment of 90 min at 90120130145160180 centigrade. The crystal phase, photoluminescence spectrum and transmission spectrum change. It is found that with the increase of annealing temperature, especially the temperature Alq3 above 130 degrees C, the new crystalline phase, that is, beta -Alq3, leads to the peak of photoluminescence of Alq3, which has never been annealed at 539 nm, and gradually blue shift to 503 nm, and the blue shift of about 30 nm has occurred, and its transmission is transmitted and absorbed. We have prepared a standard device for the study of the effects of Annealing on the performance of organic electroluminescent devices. We also performed a 90 min vacuum in-situ annealing at 90120130145160180 C, and further studied the effect of Annealing on the photoelectric properties of the electromechanical generator. The migration of the carrier in the organic layer is weakened. As the annealing temperature increases, the brightness of the device increases gradually and the brightness decreases as the annealing temperature rises. In the process, the annealing temperature varies slightly from 130 to 145, and most of the crystallization of the Alq3 appears. There is a new opportunity for the organic layer interface, which is more suitable for the transfer of electrons and holes. When the annealing temperature reaches 180 degrees C, the Al cathodic loss phenomenon will appear at low voltage conditions. It is impossible to measure the photoelectric performance of the device after the annealing treatment. But considering the life and stability of the device, it is compared with the device that has not been annealed. After annealing treatment, the device has no obvious heat or even crack. The current efficiency after annealing at 130 C reaches the maximum value of 2.38 cd/A., and the peak of the electroluminescent spectrum of the device takes about 30 nm blue shift, which is the same as the blue shift of beta -Alq3 after crystallization.
【學(xué)位授予單位】:重慶師范大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN383.1

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