本文選題：DPC + 化學(xué)鍍銅　； 參考：《華中科技大學(xué)》2015年碩士論文

【摘要】：隨著芯片功率的不斷提高,面積不斷縮小,集成度越來(lái)越高,LED封裝對(duì)散熱基板提出了更高要求。直接電鍍陶瓷基板(Direct plated copper,DPC)是在陶瓷基片上采用薄膜工藝制作完成的,其化學(xué)性質(zhì)穩(wěn)定、熱導(dǎo)率高、線(xiàn)路精細(xì)、熱膨脹系數(shù)(CTE)與芯片材料相匹配,因此成為大功率LED封裝散熱基板的重要發(fā)展方向。然而目前DPC基板由于價(jià)格偏高,沒(méi)有相應(yīng)的質(zhì)量和測(cè)試標(biāo)準(zhǔn),限制了其在大功率LED封裝中的應(yīng)用。本論文采用陶瓷表面化學(xué)鍍銅作為DPC基板種子層,減少了磁控濺射等高成本設(shè)備和工藝,降低了DPC基板制作成本;采用脈沖電鍍代替直流電鍍?cè)龊胥~層線(xiàn)路,不僅提高了效率,同時(shí)優(yōu)化了鍍層質(zhì)量;電鍍銀層取代金層作為焊接層和保護(hù)層,降低材料成本;通過(guò)與其他類(lèi)型陶瓷基板對(duì)比,提出了一些關(guān)于DPC基板性能的測(cè)試方法,為進(jìn)一步規(guī)范DPC基板質(zhì)量標(biāo)準(zhǔn)進(jìn)行了探索。本文研究工作圍繞降低DPC基板成本,提高基板性能展開(kāi),主要研究?jī)?nèi)容包括:首先,利用甲醛還原鍍銅體系在陶瓷基體上沉積化學(xué)鍍銅層,完成DPC基板種子層制作。采用正交實(shí)驗(yàn)、單因素分析等方法優(yōu)化鍍液參數(shù),得到化學(xué)鍍銅的最佳工藝參數(shù):硫酸銅濃度為8g/L、酒石酸鉀鈉濃度為40g/L、甲醛濃度為10g/L,溫度35℃,時(shí)間30min;采用百格法、微觀形貌、成分分析、高低溫循環(huán)等多種測(cè)試手段綜合分析化學(xué)鍍銅層的性能,結(jié)果表明化學(xué)鍍銅層具備較好的電學(xué)和機(jī)械性能;其次,考察分析了脈沖鍍銅電流密度與電鍍速率的關(guān)系,結(jié)果表明在一定范圍內(nèi),兩者成正比關(guān)系。相同電流密度下,相比于直流電鍍,脈沖電鍍可以明顯減少瘤狀結(jié)構(gòu)的產(chǎn)生,優(yōu)化鍍層質(zhì)量;采用3ASD的電流密度,不僅提高電鍍效率,而且可以得到形貌良好的線(xiàn)路層;再次,銀是相對(duì)便宜的貴金屬,采用硫代硫酸鹽鍍銀體系分別在銅層和鎳層上電鍍銀層,對(duì)比分析這兩者的性能,結(jié)果表明,鎳層上的鍍銀層具有更好的結(jié)合強(qiáng)度和耐高溫性,并且電流密度為0.2ASD時(shí),銀層結(jié)合力較好;最后,提出了測(cè)試陶瓷基板熱阻較為準(zhǔn)確的方法,通過(guò)模型對(duì)比,減少了主觀誤差,提高了測(cè)試精度;提出了一種測(cè)試陶瓷基板潤(rùn)濕性的簡(jiǎn)單比較方案;最后結(jié)合表面粗糙度、熱沖擊等測(cè)試手段,對(duì)比分析DPC與其他陶瓷基板的性能,結(jié)果表明DPC基板具有較好的綜合性能。
[Abstract]:With the continuous improvement of chip power and the continuous reduction of the area, the higher integration of LED packaging put forward higher requirements for the heat dissipation substrate. Direct plated copper DPCs are fabricated on ceramic substrates by using thin film technology. Their chemical properties are stable, thermal conductivity is high, the circuit is fine, and the coefficient of thermal expansion (CTE) matches the material of the chip. Therefore, it has become an important development direction of high power LED packaging heat dissipation substrate. However, the application of DPC substrate in high power LED packaging is limited due to its high price and lack of corresponding quality and test standards. In this paper, electroless copper plating on ceramic surface is used as seed layer of DPC substrate, which reduces high cost equipment and process such as magnetron sputtering, and reduces the cost of making DPC substrate. At the same time, the quality of the coating was optimized, the electroplated silver layer replaced the gold layer as the welding layer and the protective layer to reduce the material cost, and by comparing with other types of ceramic substrates, some testing methods about the properties of the DPC substrate were put forward. In order to further standardize the DPC substrate quality standards were explored. This paper focuses on reducing the cost of DPC substrate and improving the performance of the substrate. The main research contents are as follows: firstly, electroless copper coating was deposited on ceramic substrate by formaldehyde reduction copper plating system, and the seed layer of DPC substrate was made. The optimum technological parameters of electroless copper plating were obtained by orthogonal experiment and single factor analysis. The optimum parameters were copper sulfate concentration of 8g / L, potassium sodium tartrate concentration of 40g / L, formaldehyde concentration of 10g / L, temperature of 35 鈩，

本文編號(hào)：1948187