本文選題：β-Ga_2O_3 + (In_xGa_(1-x))_2O_3��； 參考：《電子科技大學(xué)》2017年碩士論文

【摘要】：近年來(lái),關(guān)于β-Ga_2O_3日盲紫外探測(cè)技術(shù)的研究發(fā)展迅猛。β-Ga_2O_3的禁帶寬度為4.9 eV,具有高的透光率、化學(xué)穩(wěn)定性好、機(jī)械強(qiáng)度高等特點(diǎn),是一種很好的日盲紫外敏感材料。由于金-半-金(Metal-Semiconductor-Metal,簡(jiǎn)寫(xiě)為MSM)型器件具有制備簡(jiǎn)單、響應(yīng)度高以及與CMOS良好的工藝兼容性等優(yōu)點(diǎn),故本論文以MSM為器件基本結(jié)構(gòu),采用分子束外延技術(shù)生長(zhǎng)了β-Ga_2O_3薄膜,并制備了日盲紫外探測(cè)器。論文具體內(nèi)容如下:論文首先研究了金-半接觸特性對(duì)器件性能的影響,對(duì)比研究了Ti/Au電極與Au電極對(duì)器件性能的影響,在未對(duì)電極進(jìn)行退火處理的情況下,與采用Au電極的器件相比,采用Ti/Au電極的器件性能更優(yōu),為此,論文選用Ti/Au作為金屬電極材料制備氧化鎵MSM日盲紫外探測(cè)器。在此基礎(chǔ)上,為了探索金-半界面特性對(duì)器件性能的影響,論文進(jìn)一步研究了電極的快速退火處理對(duì)氧化鎵MSM器件性能的影響,并探討了其影響機(jī)制。論文分別在400℃、500℃、600℃、700℃下對(duì)Ti/Au電極進(jìn)行快速退火處理,測(cè)試了退火后器件的I-V特性、時(shí)間響應(yīng)特性,并利用二次離子質(zhì)譜(SIMS)和X射線光電子能譜(XPS)技術(shù)分析了界面微觀特性。研究結(jié)果表明:經(jīng)快速退火后,Ti原子擴(kuò)散進(jìn)入氧化鎵表層與O結(jié)合生成TiO2,一方面,降低了界面的金-半接觸勢(shì)壘高度,另一方面,也導(dǎo)致界面附近氧化鎵薄膜中產(chǎn)生了更高濃度的氧空位,提高界面勢(shì)壘處的載流子濃度,使器件的光電流和暗電流都隨著電極退火溫度的升高而增大,從而提高了器件的光響應(yīng)度。然而,也正是因?yàn)榻缑嫜蹩瘴粷舛鹊脑黾?由于氧空位對(duì)電子的陷阱效應(yīng),導(dǎo)致了器件更加嚴(yán)重的持續(xù)光電導(dǎo)效應(yīng)(persistent photo-conductivity,簡(jiǎn)寫(xiě)為PPC),器件響應(yīng)速度變差。在金-半接觸特性研究基礎(chǔ)上,為了提高器件的光響應(yīng)度,論文研究了摻In氧化鎵薄膜(In_xGa_(1-x))_2O_3的光電性能。為此,論文首先探索了薄膜的摻銦量與In源溫度的關(guān)系,并利用EDS、AFM、XPS、紫外可見(jiàn)光譜等來(lái)表征薄膜的性質(zhì)。EDS測(cè)試結(jié)果顯示:當(dāng)基片溫度固定為760℃時(shí),In源溫度為700℃時(shí),In源含量為11.5%,這說(shuō)明:可以通過(guò)控制In源溫度對(duì)(In_xGa_(1-x))_2O_3薄膜中的In含量進(jìn)行有效調(diào)控。為了研究不同In源溫度所制備(In_xGa_(1-x))_2O_3薄膜的性質(zhì),論文研究了其MSM光電導(dǎo)器件的I-V特性、時(shí)間響應(yīng)特性以及紫外光譜響應(yīng),測(cè)試結(jié)果顯示:當(dāng)In源溫度低于600℃時(shí),器件性能未發(fā)生顯著變化,當(dāng)In源溫度為650℃時(shí),器件的性能明顯改善,但當(dāng)In源溫度為700℃時(shí),器件綜合性能反而變差,暗電流為9.8 mA,光電流為10.3 mA,雖然響應(yīng)度達(dá)到7.1×104 A/W,但光暗電流比僅為1。AFM分析結(jié)果顯示:當(dāng)In源溫度為700℃時(shí),薄膜表面出現(xiàn)凸起的類(lèi)似球狀物形貌;經(jīng)XPS分析得知薄膜表面In析出形成In_2O_3相,這表明:(In_xGa_(1-x))_2O_3薄膜存在嚴(yán)重的晶相分離,從而導(dǎo)致器件性能變差。由于In的高揮發(fā)性,薄膜中的In含量不僅與In源溫度有關(guān),而且受基片溫度影響,為了減弱薄膜的晶相分離程度,論文通過(guò)大量實(shí)驗(yàn)對(duì)基片溫度和In源溫度進(jìn)行優(yōu)化,優(yōu)化的基片溫度和In源溫度分別為560℃和600℃,利用此條件下生長(zhǎng)的(In_xGa_(1-x))_2O_3薄膜所研制MSM探測(cè)器綜合性能較好,暗電流為424 pA,光電流為1.06μA,光暗電流比為2.5×103,響應(yīng)度為73.6 A/W,展現(xiàn)出了較好的日盲紫外光電探測(cè)的器件性能。
[Abstract]:In recent years, the research on beta -Ga_2O_3 daily blind ultraviolet detection has been developing rapidly. The band gap of beta -Ga_2O_3 is 4.9 eV, with high transmittance, good chemical stability and high mechanical strength. It is a very good daily blind UV sensitive material. Because of the gold half gold (Metal-Semiconductor-Metal, MSM) type device, it has the preparation of simple materials. Single, high responsiveness and good compatibility with CMOS technology, this paper uses MSM as the basic structure, uses molecular beam epitaxy technology to grow beta -Ga_2O_3 thin film, and has prepared a daily blind ultraviolet detector. The contents of this paper are as follows: firstly, the influence of gold and semi contact characteristics on the performance of the device is studied, and Ti/A is compared and studied in this paper. The effect of the U electrode and the Au electrode on the performance of the device is better than that of the devices using the Au electrode in the condition that the electrode is not annealed. Therefore, Ti/Au is used as the metal electrode material to prepare the gallium oxide MSM daily blind ultraviolet detector. On this basis, the gold and semi interfacial properties are explored. The influence of the device performance is further studied, and the influence of the fast annealing treatment on the performance of gallium oxide MSM devices is further studied and its influence mechanism is discussed. The paper deals with the rapid annealing of the Ti/Au electrode at 400, 500, 600 and 700, respectively, and tests the I-V characteristics, the time response characteristic of the annealed device, and the use of two ions. Mass spectrometry (SIMS) and X ray photoelectron spectroscopy (XPS) techniques have been used to analyze the microscopic characteristics of the interface. The results show that after rapid annealing, the diffusion of Ti atoms into the surface of gallium oxide is combined with O to produce TiO2. On the one hand, the gold and semi contact barrier height of the interface is reduced. On the other hand, the higher concentration of gallium oxide thin films near the interface is produced. The oxygen vacancy, increasing the carrier concentration at the barrier at the interface, makes the photocurrent and dark current of the device increase with the increase of the annealing temperature of the electrode, thus improving the optical responsivity of the device. However, it is also because of the increase in the oxygen vacancy concentration of the interface, which causes the device to continue to be more serious due to the trap effect of the oxygen vacancy on the electric device. The photoconductivity effect (persistent photo-conductivity, abbreviated as PPC), the response speed of the device is poor. On the basis of the study of the gold and semi contact characteristics, in order to improve the optical responsivity of the device, the photoelectric properties of the In_xGa_ (In_xGa_ (1-x)) _2O_3 doped with In are studied. EDS, AFM, XPS, and UV visible spectra are used to characterize the properties of the thin films. The results show that when the substrate temperature is fixed at 760 C, the In source temperature is 700, and the In source content is 11.5%. This shows that the In content in the In_xGa_ (1-x) _2O_3 thin film can be effectively controlled by controlling the temperature of the In source. In order to study the temperature of the different In sources. The properties of (In_xGa_ (1-x)) _2O_3 film are prepared. The I-V characteristics, time response characteristics and UV spectral response of the MSM photoconductivity device are studied. The test results show that the performance of the device has not changed significantly when the temperature of the In source is below 600 C. When the temperature of the In source is 650, the performance of the device is obviously improved, but the temperature of the In source is 700. The overall performance of the device becomes worse, the dark current is 9.8 mA and the photocurrent is 10.3 mA. Although the response degree is 7.1 * 104 A/W, the light dark current ratio is only 1.AFM analysis results show that when the In source temperature is 700, the surface of the thin film appears to be similar to the shape of the spheroid, and the XPS analysis shows that the surface of the thin film is formed to form In_2O_3 phase, which indicates: (I N_xGa_ (1-x)) _2O_3 thin film has serious crystalline phase separation, resulting in poor performance of the device. Because of the high volatility of In, the In content in the film is not only related to the temperature of the In source, but also influenced by the temperature of the substrate. In order to weaken the degree of crystal phase separation of the film, the paper optimizes the substrate temperature and the temperature of the In source by a large number of experiments. The film temperature and In source temperature are 560 C and 600 C respectively. The MSM detector developed by the (In_xGa_ (1-x)) _2O_3 film under this condition has better comprehensive performance, the dark current is 424 pA, the photocurrent is 1.06 A, the light dark current ratio is 2.5 x 103, the response degree is 73.6 A/W, showing the better device performance of the daily blind ultraviolet photoelectric detection.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN23

【參考文獻(xiàn)】

相關(guān)期刊論文 前8條

1 王保華;李妥妥;鄭國(guó)憲;;日盲紫外探測(cè)系統(tǒng)研究[J];激光與光電子學(xué)進(jìn)展;2014年02期

2 李長(zhǎng)棟;韓慧伶;;寬禁帶半導(dǎo)體日盲紫外探測(cè)器研究進(jìn)展[J];光機(jī)電信息;2009年04期

3 羅家強(qiáng);半導(dǎo)體光電探測(cè)器的發(fā)展及應(yīng)用[J];世界電子元器件;2002年07期

4 查良鎮(zhèn),桂東,朱怡崢;二次離子質(zhì)譜學(xué)的新進(jìn)展[J];真空科學(xué)與技術(shù);2001年02期

5 劉榴娣,倪國(guó)強(qiáng),鐘生東,王毅;紫外線的應(yīng)用、探測(cè)及其新發(fā)展[J];光學(xué)技術(shù);1998年02期

6 李曉軍,尹長(zhǎng)松;半導(dǎo)體光電探測(cè)器及進(jìn)展[J];半導(dǎo)體雜志;1997年02期

7 陳宜生;;外光電效應(yīng)及其應(yīng)用[J];物理通報(bào);1994年05期

8 金圣經(jīng);光電管[J];物理;1986年09期

相關(guān)博士學(xué)位論文 前1條

1 賀利軍;電子束蒸發(fā)傾斜沉積氧化鋁薄膜結(jié)構(gòu)與性質(zhì)研究[D];電子科技大學(xué);2014年

相關(guān)碩士學(xué)位論文 前4條

1 夏勇;氧化鎵異質(zhì)外延薄膜結(jié)構(gòu)與性質(zhì)的關(guān)系研究[D];電子科技大學(xué);2016年

2 盛拓;氧化鎵薄膜光電導(dǎo)日盲紫外探測(cè)器的研制[D];電子科技大學(xué);2015年

3 岳超;半導(dǎo)體氧化鎵與金屬的接觸特性研究[D];電子科技大學(xué);2014年

4 李杰;MSM結(jié)構(gòu)紫外探測(cè)器的性能測(cè)試與研究[D];電子科技大學(xué);2010年

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