本文選題：鍺硅異質(zhì)結(jié)雙極晶體管 + 總劑量輻射效應(yīng)��； 參考：《新疆大學(xué)》2015年碩士論文

【摘要】：為了對比研究不同廠家不同SiGe HBTs器件的總劑量輻射損傷效應(yīng)以及在不同偏置不同劑量率條件下SiGe HBTs器件的輻射響應(yīng)規(guī)律和潛在的損傷機(jī)理,本文選取了四款不同的SiGe HBTs器件,設(shè)計(jì)了相關(guān)實(shí)驗(yàn),利用60Coγ射線對其在不同偏置狀態(tài)下進(jìn)行了高低劑量率分別為80rad(Si)/s和0.05rad(Si)/s,總累積劑量分別為1.1Mrad(Si)和1.0Mrad(Si)的電離總劑量輻照實(shí)驗(yàn)。實(shí)驗(yàn)結(jié)果表明,SiGe HBTs具有一定的抗總劑量輻照的性能,且基極電流和電流增益比集電極電流對輻射更敏感。在不同偏置條件輻射下,除了器件NESG260234外基本都表現(xiàn)為基射結(jié)反偏損傷最大,零偏次之,正偏最小,可以將基射結(jié)反偏作為SiGe HBTs器件的最劣輻照偏置,其潛在的損傷機(jī)理可由邊緣電場模型來解釋。不同劑量率輻照下KT1151器件只表現(xiàn)為時(shí)間相關(guān)效應(yīng),器件KT9041表現(xiàn)出了非常明顯的低劑量率輻射損傷增強(qiáng)效應(yīng),NESG260234與BFP640ESD在現(xiàn)有的實(shí)驗(yàn)數(shù)據(jù)下劑量率效應(yīng)不明顯,不同的劑量率效應(yīng)可以由空間電荷模型下高劑量率輻照損傷被抑制來進(jìn)行解釋說明。
[Abstract]:In order to compare and study the total dose radiation damage effect of different SiGe HBTs devices from different manufacturers, the radiation response law and potential damage mechanism of SiGe HBTs devices under different bias and different dose rates, four different SiGe HBTs devices are selected in this paper. The experiment was designed and the total dose irradiation experiments were carried out by using 60Co 緯-ray at 80rad(Si)/s and 0.05 RDS at different bias states, respectively, and the total cumulative dose was 1.1 Mradsii) and 1.0 Mradsir ~ (-Si), respectively. The experimental results show that SiGe HBTs has a certain resistance to total dose irradiation, and the base current and current gain are more sensitive to radiation than collector current. Under different bias conditions, except for the device NESG260234, the fundamental emitter damage is the largest, the zero bias is the second, and the positive bias is the smallest. The fundamental junction inverse bias can be regarded as the worst radiation bias of the SiGe HBTs devices. The potential damage mechanism can be explained by the edge electric field model. Under different dose rates, KT1151 devices exhibit only time-dependent effects, and KT9041 shows a very obvious enhancement effect of radiation damage at low dose rate. The dose-rate effects of NESG260234 and BFP640ESD are not obvious under the available experimental data. Different dose rate effects can be explained by the suppression of high dose rate radiation damage under space charge model.
【學(xué)位授予單位】：新疆大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN322.8

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相關(guān)期刊論文 前1條

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本文編號：1923891